Santos, Paulo V., et al. “Optical Properties of Ordered As Layers on InP(110) Surfaces.”10.1103/physrevlett.77.759__Physical Review Letters, vol. 77, no. 4, 1996, pp. 759–62, doi:10.1103/physrevlett.77.759.

Schmidt, Wolf Gero, and F. Bechstedt. “Atomic Structures of GaAs(100)-(2 × 4) Reconstructions.”10.1016/0039-6028(96)00728-5__Surface Science, vol. 360, no. 1, 1996, pp. L473–77, doi:10.1016/0039-6028(96)00728-5.

Bechstedt, F., et al. “Adatoms and Vacancies on the Diamond(111) Surface.”10.1209/epl/i1996-00155-0__Europhysics Letters (EPL), vol. 35, no. 8, 1996, pp. 585–90, doi:10.1209/epl/i1996-00155-0.

Schmidt, W. “Adsorption of Group-V Elements on III–V (1 1 0) Surfaces.”10.1016/s0167-5729(96)00006-4__Surface Science Reports, vol. 25, 1996, pp. 141–223, doi:10.1016/s0167-5729(96)00006-4.

Schmidt, Wolf Gero, and W. .. Verwoerd. “Annihilation of Delocalized Positrons: A Comparison of Diamond and Silicon.”10.1016/0375-9601(96)00653-6__Physics Letters A, vol. 222, no. 4, 1996, pp. 275–80, doi:10.1016/0375-9601(96)00653-6.

Scholze, A., et al. “Structure of the Diamond (111) Surface: Single-Dangling-Bond versus Triple-Dangling-Bond Face.”10.1103/physrevb.53.13725__Physical Review B, vol. 53, no. 20, 1996, pp. 13725–33, doi:10.1103/physrevb.53.13725.

Schmidt, Wolf Gero, et al. “d Core-Level Shifts At.”10.1016/0039-6028(96)00220-8__Surface Science, vol. 357–358, 1996, pp. 545–49, doi:10.1016/0039-6028(96)00220-8.

Scholze, A., et al. “Diamond (111) and (100) Surface Reconstructions.”10.1016/0040-6090(96)08646-4__Thin Solid Films, vol. 281–282, 1996, pp. 256–59, doi:10.1016/0040-6090(96)08646-4.

Schmidt, Wolf Gero, et al. “Phonons at III–V (110) Surfaces.”10.1016/0039-6028(95)01095-5__Surface Science, vol. 352–354, 1996, pp. 83–88, doi:10.1016/0039-6028(95)01095-5.

Schmidt, Wolf Gero, et al. “Dimerized, Buckled, or Ideal Chains on the Diamond (111)2 × 1 Surface?”10.1016/0039-6028(95)01270-2__Surface Science, vol. 351, 1996, pp. 183–88, doi:10.1016/0039-6028(95)01270-2.

Käckell, Peter, et al. “Se-Induced 3d Core-Level Shifts of GaAs(110).”10.1016/s0169-4332(96)00135-3__Applied Surface Science, vol. 104–105, 1996, pp. 141–46, doi:10.1016/s0169-4332(96)00135-3.

Scholze, A., et al. “Diamond (111) and (100) Surface: Ab Initio Study of the Atomic and Electronic Structure.”10.1016/0921-5107(95)01477-2__Materials Science and Engineering: B, vol. 37, no. 1–3, 1996, pp. 158–61, doi:10.1016/0921-5107(95)01477-2.

Meier, Torsten, et al. “Coherent Dynamics of Semiconductor Heterostructures.”10.1142/9789812830487_0003__Microscopic Theory Of Semiconductors: Quantum Kinetics, Confinement and Lasers, edited by S.W. Koch, World Scientific, 1996, pp. 81–130, doi:10.1142/9789812830487_0003.

Meier, Torsten, et al. “Dephasing of Interacting Heavy-Hole and Light-Hole Excitons in GaAs Quantum Wells.”10.1364/JOSAB.13.001026__Journal of the Optical Society of America B, vol. 13, no. 5, Optica Publishing Group, 1996, pp. 1026–30, doi:10.1364/JOSAB.13.001026.

Meier, Torsten, et al. “On the Observability of Dynamic Localization in Semiconductor Superlattices Using Optical Spectroscopy.”10.1007/978-1-4613-0401-2_46__Hot Carriers in Semiconductors, edited by K. Hess, New York, 1996, pp. 195–97, doi:10.1007/978-1-4613-0401-2_46.

Meier, Torsten, et al. “Microscopic Theory of the Bloch-Oscillation Dynamics in Semiconductor Superlattices: Intra- versus Interband Dephasing.” Proceedings of the 23rd ICPS, edited by M. Scheffler and R. Zimmermann, World Scientific, 1996, pp. 1775–78.

Meier, Torsten, et al. “Exciton Ionization Induced by an Electric Field in a Strongly Coupled GaAs/AlxG-XAs Superlattice.”10.1103/PhysRevB.53.13688__Physical Review-Section B-Condensed Matter, vol. 53, no. 20, 1996, pp. 13688–93, doi:10.1103/PhysRevB.53.13688.

Meier, Torsten, et al. “Disorder Mediated Biexcitonic Beats in Semiconductor Quantum Wells.”10.1103/PhysRevB.54.4436__Physical Review B, vol. 54, no. 7, American Physical Society, 1996, pp. 4436–39, doi:10.1103/PhysRevB.54.4436.

Meier, Torsten, and S. Mukamel. “Femtosecond Spectroscopic Signatures of Electronic Correlations in Conjugated Polyenes and Semiconductor Nanostructures.”10.1103/PhysRevLett.77.3471__Physical Review Letters, vol. 77, no. 16, American Physical Society, 1996, pp. 3471–74, doi:10.1103/PhysRevLett.77.3471.

Meier, Torsten, et al. “Field-Induced Exciton Ionization Studied by Four-Wave Mixing.”10.1007/978-1-4613-0401-2_1__Hot Carriers in Semiconductors, edited by K. Hess, Plenum Press, 1996, pp. 3–6, doi:10.1007/978-1-4613-0401-2_1.