Optical Properties of Ordered As Layers on InP(110) Surfaces
P.V. Santos, B. Koopmans, N. Esser, W.G. Schmidt, F. Bechstedt, Physical Review Letters 77 (1996) 759–762.

Atomic structures of GaAs(100)-(2 × 4) reconstructions
W.G. Schmidt, F. Bechstedt, Surface Science 360 (1996) L473–L477.

Adatoms and vacancies on the diamond(111) surface
F. Bechstedt, W.G. Schmidt, A. Scholze, Europhysics Letters (EPL) 35 (1996) 585–590.

Adsorption of group-V elements on III–V (1 1 0) surfaces
W. Schmidt, Surface Science Reports 25 (1996) 141–223.

Annihilation of delocalized positrons: a comparison of diamond and silicon
W.G. Schmidt, W.. Verwoerd, Physics Letters A 222 (1996) 275–280.

Structure of the diamond (111) surface: Single-dangling-bond versus triple-dangling-bond face
A. Scholze, W.G. Schmidt, F. Bechstedt, Physical Review B 53 (1996) 13725–13733.

3d core-level shifts at
W.G. Schmidt, P. Käckell, F. Bechstedt, Surface Science 357–358 (1996) 545–549.

Diamond (111) and (100) surface reconstructions
A. Scholze, W.G. Schmidt, F. Bechstedt, Thin Solid Films 281–282 (1996) 256–259.

Phonons at III–V (110) surfaces
W.G. Schmidt, F. Bechstedt, G.P. Srivastava, Surface Science 352–354 (1996) 83–88.

Dimerized, buckled, or ideal chains on the diamond (111)2 × 1 surface?
W.G. Schmidt, A. Scholze, F. Bechstedt, Surface Science 351 (1996) 183–188.

Se-induced 3d core-level shifts of GaAs(110)
P. Käckell, W.G. Schmidt, F. Bechstedt, Applied Surface Science 104–105 (1996) 141–146.

Diamond (111) and (100) surface: ab initio study of the atomic and electronic structure
A. Scholze, W.G. Schmidt, P. Käckell, F. Bechstedt, Materials Science and Engineering: B 37 (1996) 158–161.

Coherent Dynamics of Semiconductor Heterostructures
T. Meier, S.W. Koch, T. Stroucken, A. Knorr, J. Hader, F. Rossi, P. Thomas, in: S.W. Koch (Ed.), Microscopic Theory Of Semiconductors: Quantum Kinetics, Confinement and Lasers, World Scientific, Singapore, 1996, pp. 81–130.

Dephasing of interacting heavy-hole and light-hole excitons in GaAs quantum wells
T. Meier, K. Bott, E.J. Mayer, G.O. Smith, V. Heuckeroth, M. Hübner, J. Kuhl, A. Schulze, M. Lindberg, S.W. Koch, P. Thomas, R. Hey, K. Ploog, Journal of the Optical Society of America B 13 (1996) 1026–1030.

On the Observability of dynamic localization in semiconductor superlattices using optical spectroscopy
T. Meier, F. Rossi, K.-C. Je, J. Hader, P. Thomas, S.W. Koch, in: K. Hess (Ed.), Hot Carriers in Semiconductors, New York, Plenum Press, 1996, pp. 195–197.

Microscopic theory of the Bloch-oscillation dynamics in semiconductor superlattices: Intra- versus interband Dephasing
T. Meier, F. Rossi, M. Gulia, P.E. Selbmann, E. Molinari, P. Thomas, P. Thomas, S.W. Koch, in: M. Scheffler, R. Zimmermann (Eds.), Proceedings of the 23rd ICPS, World Scientific, Singapore, 1996, pp. 1775–1778.

Exciton ionization induced by an electric field in a strongly coupled GaAs/AlxG-xAs superlattice
T. Meier, G. von Plessen, M. Koch, J. Feldmann, P. Thomas, S.W. Koch, E.O. Göbel,  K.W. Goosen, J.M. Kuo, R.F. Kopf, Physical Review-Section B-Condensed Matter 53 (1996) 13688–13693.

Disorder mediated biexcitonic beats in semiconductor quantum wells
T. Meier, T.F. Albrecht, K. Bott, A. Schulze, M. Koch, S.T. Cundiff, J. Feldmann, W. Stolz, P. Thomas, S.W. Koch, E.O. Göbel, Physical Review B 54 (1996) 4436–4439.

Femtosecond Spectroscopic Signatures of Electronic Correlations in Conjugated Polyenes and Semiconductor Nanostructures
T. Meier, S. Mukamel, Physical Review Letters 77 (1996) 3471–3474.

Field-induced exciton ionization studied by four-wave mixing
T. Meier, M. Koch, G. von Plessen, J. Feldmann, S.W. Koch, P. Thomas, E.O. Göbel, K.W. Goosen, J.M. Kuo, R.F. Kopf, in: K. Hess (Ed.), Hot Carriers in Semiconductors, Plenum Press, New York, 1996, pp. 3–6.