T. Meier and S. Mukamel, “Femtosecond Spectroscopic Signatures of Electronic Correlations in Conjugated Polyenes and Semiconductor Nanostructures,”10.1103/PhysRevLett.77.3471__Physical review letters, vol. 77, no. 16, pp. 3471–3474, 1996, doi:10.1103/PhysRevLett.77.3471 .

T. Meier et al., “Field-induced exciton ionization studied by four-wave mixing,” in Hot Carriers in Semiconductors, K. Hess, Ed. New York: Plenum Press, 1996, pp. 3–6.

T. Meier, S. W. Koch, J. Hader, K.-C. Je, F. Rossi, and P. Thomas, “Equilibrium and nonequilibrium optical effetcs in semiconductor heterostructures,” in Frontiers in Nanoscale Science of Micro/Submicro Devices, vol. 328, A.-P. Jauho and E. V. Buzeaneva, Eds. Dordrecht: Kluver Publ., 1996, pp. 459–478.

T. Meier, F. Rossi, P. Thomas, S. W. Koch, P. E. Selbmann , and E. Molinari, “Phonon-Induced Suppression of Bloch Oscillations in Semiconductor Superlattices: a Monte Carlo Investigation,” in Hot Carriers in Semiconductors, K. Hess, Ed. New York: Plenum Press, 1996, pp. 157–160.

P. V. Santos, N. Esser, J. Groenen, M. Cardona, W. G. Schmidt, and F. Bechstedt, “Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces,” Physical Review B, vol. 52, no. 24, pp. 17379–17385, 1995.

P. V. Santos, N. Esser, M. Cardona, W. G. Schmidt, and F. Bechstedt, “Optical properties of Sb-terminated GaAs and InP (110) surfaces,” Physical Review B, vol. 52, no. 16, pp. 12158–12167, 1995.

W. G. Schmidt, F. Bechstedt, and G. P. Srivastava, “III-V(110) surface dynamics from anab initiofrozen-phonon approach,” Physical Review B, vol. 52, no. 3, pp. 2001–2007, 1995.

W. G. Schmidt and F. Bechstedt, “Se/GaAs(110): energetics and structure,” Surface Science, vol. 331–333, no. Part A, pp. 557–563, 1995.

C. Kress, M. Fiedler, W. G. Schmidt, and F. Bechstedt, “Quasi-particle band structure of C(111)2 × 1 and C(100)2 × 1 surfaces,” Surface Science, vol. 331–333, pp. 1152–1156, 1995.

W. G. Schmidt and G. P. Srivastava, “III-V(110)/Sb(1 ML): structural and dynamical properties,” Surface Science, vol. 331–333, no. Part A, pp. 540–545, 1995.

C. Kress, M. Fiedler, W. G. Schmidt, and F. Bechstedt, “Geometrical and electronic structure of the reconstructed diamond (100) surface,” Physical Review B, vol. 50, no. 23, pp. 17697–17700, 1995.

W. G. Schmidt and F. Bechstedt, “Exchange reactions versus adsorption geometries for Se/GaAs(110),” Physical Review B, vol. 50, no. 23, pp. 17651–17654, 1995.

W. G. Schmidt and F. Bechstedt, “Se/GaAs(110): Atomic and electronic structure,” Physical Review B, vol. 50, no. 23, pp. 17280–17291, 1995.

T. Meier, G. von Plessen, P. Thomas, and S. W. Koch, “Coherent effects induced by static and time-dependent electric fields in semiconductors,”10.1103/PhysRevB.51.14490__Physical Review B, vol. 51, no. 20, pp. 14490–14497, 1995, doi:10.1103/PhysRevB.51.14490 .

T. Meier et al., “Polarization selection rules for quantum beating between light-and heavy-hole excitons in GaAs quantum wells,”10.1016/0038-1098(95)00052-6__Solid state communications, vol. 94, no. 5, pp. 373–377, 1995, doi:10.1016/0038-1098(95)00052-6 .

T. Meier, F. Rossi, P. Thomas, and S. W. Koch, “Dynamic Localization in Anisotropic Coulomb Systems: Field induced Crossover of the Exciton Dimension,”10.1103/PhysRevLett.75.2558__Physical review letters, vol. 75, no. 13, pp. 2558–2561, 1995, doi:10.1103/PhysRevLett.75.2558 .

T. Meier, K.-C. Je, F. Rossi, and S. W. Koch, “Theory of quasi-equilibrium nonlinear optical absorption in semiconductor superlattices,”10.1063/1.114831__Applied physics letters, vol. 67, no. 20, pp. 2978–2980, 1995, doi:10.1063/1.114831 .

T. Meier et al., “Transient degenerate four-wave-mixing on excitons in GaAs quantum wells,” Laser Physics, vol. 5, no. 3, pp. 616–620, 1995.

T. Meier et al., “Biexciton Contributions to the Excitonic Nonlinearity in GaAs Quantum Wells,” in Proceedings of the 22nd International Conference on the Physics of Semiconductors ICPS, Vancouver, Canada, 1995, pp. 1776–1779.

T. Meier et al., “Coherent dynamics of exciton wave packets in quantum wells and superlattices,” in Proceedings of the 22nd International Conference on the Physics of Semiconductors ICPS, Vancouver, Canada, 1995, pp. 1296–1303.