Femtosecond Spectroscopic Signatures of Electronic Correlations in Conjugated Polyenes and Semiconductor Nanostructures
T. Meier, S. Mukamel, Physical Review Letters 77 (1996) 3471–3474.

Field-induced exciton ionization studied by four-wave mixing
T. Meier, M. Koch, G. von Plessen, J. Feldmann, S.W. Koch, P. Thomas, E.O. Göbel, K.W. Goosen, J.M. Kuo, R.F. Kopf, in: K. Hess (Ed.), Hot Carriers in Semiconductors, Plenum Press, New York, 1996, pp. 3–6.

Equilibrium and nonequilibrium optical effetcs in semiconductor heterostructures
T. Meier, S.W. Koch, J. Hader, K.-C. Je, F. Rossi, P. Thomas, in: A.-P. Jauho, E.V. Buzeaneva (Eds.), Frontiers in Nanoscale Science of Micro/Submicro Devices, Kluver Publ., Dordrecht, 1996, pp. 459–478.

Phonon-Induced Suppression of Bloch Oscillations in Semiconductor Superlattices: a Monte Carlo Investigation
T. Meier, F. Rossi, P. Thomas, S.W. Koch, P.E. Selbmann , E. Molinari, in: K. Hess (Ed.), Hot Carriers in Semiconductors, Plenum Press, New York, 1996, pp. 157–160.

Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces
P.V. Santos, N. Esser, J. Groenen, M. Cardona, W.G. Schmidt, F. Bechstedt, Physical Review B 52 (1995) 17379–17385.

Optical properties of Sb-terminated GaAs and InP (110) surfaces
P.V. Santos, N. Esser, M. Cardona, W.G. Schmidt, F. Bechstedt, Physical Review B 52 (1995) 12158–12167.

III-V(110) surface dynamics from anab initiofrozen-phonon approach
W.G. Schmidt, F. Bechstedt, G.P. Srivastava, Physical Review B 52 (1995) 2001–2007.

Se/GaAs(110): energetics and structure
W.G. Schmidt, F. Bechstedt, Surface Science 331–333 (1995) 557–563.

Quasi-particle band structure of C(111)2 × 1 and C(100)2 × 1 surfaces
C. Kress, M. Fiedler, W.G. Schmidt, F. Bechstedt, Surface Science 331–333 (1995) 1152–1156.

III-V(110)/Sb(1 ML): structural and dynamical properties
W.G. Schmidt, G.P. Srivastava, Surface Science 331–333 (1995) 540–545.

Geometrical and electronic structure of the reconstructed diamond (100) surface
C. Kress, M. Fiedler, W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17697–17700.

Exchange reactions versus adsorption geometries for Se/GaAs(110)
W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17651–17654.

Se/GaAs(110): Atomic and electronic structure
W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17280–17291.

Coherent effects induced by static and time-dependent electric fields in semiconductors
T. Meier, G. von Plessen, P. Thomas, S.W. Koch, Physical Review B 51 (1995) 14490–14497.

Polarization selection rules for quantum beating between light-and heavy-hole excitons in GaAs quantum wells
T. Meier, G.O. Smith, E.J. Mayer, V. Heuckeroth, J. Kuhl, K. Bott, A. Schulze, D. Bennhardt, S.W. Koch, P. Thomas, R. Hey, K. Ploog, Solid State Communications 94 (1995) 373–377.

Dynamic Localization in Anisotropic Coulomb Systems: Field induced Crossover of the Exciton Dimension
T. Meier, F. Rossi, P. Thomas, S.W. Koch, Physical Review Letters 75 (1995) 2558–2561.

Theory of quasi-equilibrium nonlinear optical absorption in semiconductor superlattices
T. Meier, K.-C. Je, F. Rossi, S.W. Koch, Applied Physics Letters 67 (1995) 2978–2980.

Transient degenerate four-wave-mixing on excitons in GaAs quantum wells
T. Meier, J. Kuhl, E.J. Mayer, G.O. Smith, K. Bott, A. Schulze, V. Heuckeroth, O. Heller, S.T. Cundiff, D. Bennhardt, S.W. Koch, P. Thomas, R. Hey, K. Ploog, Laser Physics 5 (1995) 616–620.

Biexciton Contributions to the Excitonic Nonlinearity in GaAs Quantum Wells
T. Meier, J. Kuhl, E.J. Mayer, G.O. Smith, A. Schulze, D. Bennhardt, S.W. Koch, P. Thomas, R. Hey, K. Ploog, in: D.J. Lockwood (Ed.), Proceedings of the 22nd International Conference on the Physics of Semiconductors ICPS, World Scientific, Singapore, 1995, pp. 1776–1779.

Coherent dynamics of exciton wave packets in quantum wells and superlattices
T. Meier, J. Feldmann, M. Koch, G. von Plessen, W. Stolz, P. Thomas, E.O. Göbel, in: D.J. Lockwood (Ed.), Proceedings of the 22nd International Conference on the Physics of Semiconductors ICPS, World Scientific, Singapore, 1995, pp. 1296–1303.