D. J. Carrad et al., “The effect of (N)2Sxpassivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices,” Journal of Physics: Condensed Matter, vol. 25, no. 32, 2013.
LibreCat: /record/7260
DOI: 10.1088/0953-8984/25/32/325304

H. Höpfner et al., “Spin relaxation length in quantum dot spin LEDs,” physica status solidi (c), vol. 10, no. 9, pp. 1214–1217, 2013.
LibreCat: /record/7261
DOI: 10.1002/pssc.201200689

J. H. Prechtel et al., “Frequency-Stabilized Source of Single Photons from a Solid-State Qubit,” Physical Review X, vol. 3, no. 4, 2013.
LibreCat: /record/7262
DOI: 10.1103/physrevx.3.041006

G. Moody et al., “Biexcitons in semiconductor quantum dot ensembles,” physica status solidi (b), vol. 250, no. 9, pp. 1753–1759, 2013.
LibreCat: /record/7263
DOI: 10.1002/pssb.201200725

M. Wortmann, A. Ludwig, J. Meijer, D. Reuter, and A. D. Wieck, “High-resolution mass spectrometer for liquid metal ion sources,” Review of Scientific Instruments, vol. 84, no. 9, 2013.
LibreCat: /record/7264
DOI: 10.1063/1.4822275

A. V. Kuhlmann et al., “Charge noise and spin noise in a semiconductor quantum device,” Nature Physics, vol. 9, no. 9, pp. 570–575, 2013.
LibreCat: /record/7266
DOI: 10.1038/nphys2688

A. V. Kuhlmann et al., “A dark-field microscope for background-free detection of resonance fluorescence from single semiconductor quantum dots operating in a set-and-forget mode,” Review of Scientific Instruments, vol. 84, no. 7, 2013.
LibreCat: /record/7267
DOI: 10.1063/1.4813879

H. Höpfner et al., “Spin injection, transport, and relaxation in spin light-emitting diodes: magnetic field effects,” in Spintronics VI, 2013.
LibreCat: /record/7280
DOI: 10.1117/12.2023324

H. Höpfner et al., “Spin relaxation length in quantum dot spin LEDs,” physica status solidi (c), vol. 10, no. 9, pp. 1214–1217, 2013.
LibreCat: /record/7281
DOI: 10.1002/pssc.201200689

J. Schuster, T. Y. Kim, E. Batke, D. Reuter, and A. D. Wieck, “Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures,” Semiconductor Science and Technology, vol. 28, no. 8, 2013.
LibreCat: /record/7282
DOI: 10.1088/0268-1242/28/8/085012