Coherent dynamics in InGaAs quantum dots and quantum dot molecules
W. Langbein, P. Borri, U. Woggon, M. Schwab, M. Bayer, S. Fafard, Z. Wasilewski, P. Hawrylak, V. Stavarache, D. Reuter, A.D. Wieck, Physica E: Low-Dimensional Systems and Nanostructures (2004) 400–407.

Magnetic field dependence of hole levels in InAs quantum dots
D. Reuter, P. Kailuweit, A.D. Wieck, U. Zeitler, J.C. Maan, Physica E: Low-Dimensional Systems and Nanostructures (2004) 446–449.

Preparation and characterization of epitaxial Fe(001) thin films on GaAs(001)-based LED for spin injection
E. Schuster, W. Keune, F.-Y. Lo, D. Reuter, A. Wieck, K. Westerholt, Superlattices and Microstructures (2004) 313–320.

Electroluminescence of single-dot nano-LEDs—optical spectroscopy of an electrically tunable few-electron/hole system
R. Schmidt, M. Vitzethum, R. Fix, U. Scholz, S. Malzer, C. Metzner, P. Kailuweit, D. Reuter, A. Wieck, M.C. Hübner, S. Stufler, A. Zrenner, G.H. Döhler, Physica E: Low-Dimensional Systems and Nanostructures (2004) 110–114.

Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation
D. Kähler, M. Knop, U. Kunze, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2004) 140–143.

Ultrasmall nanoscale devices fabricated from compensating-layer GaAs/AlGaAs heterostructures
D. Kähler, U. Kunze, D. Reuter, A. D. Wieck, Physica E: Low-Dimensional Systems and Nanostructures (2004) 435–439.

The linearly graded two-dimensional p–n junction
S. Petrosyan, A. Yesayan, D. Reuter, A.D. Wieck, Applied Physics Letters (2004) 3313–3315.

Laterally patterned high mobility two-dimensional electron gases obtained by overgrowth of focused ion beam implanted Al1xGaxAs
C. Riedesel, D. Reuter, A.. Wieck, Physica E: Low-Dimensional Systems and Nanostructures (2004) 592–596.

Frequency-dependent C(V) spectroscopy of the hole system in InAs quantum dots
D. Reuter, P. Schafmeister, P. Kailuweit, A.D. Wieck, Physica E: Low-Dimensional Systems and Nanostructures (2004) 445–450.

Fabrication of two-dimensional n- and p-type in-plane gate transistors from the same p-doped GaAs/In0.1G.9As/Al0.33G.67As heterostructure
D. Reuter, A. Seekamp, A.. Wieck, Physica E: Low-Dimensional Systems and Nanostructures (2004) 872–875.