Pertsch, T., Zentgraf, T., Peschel, U., Bräuer, A., &; Lederer, F. (2002). Anomalous Refraction and Diffraction in Discrete Optical Systems. Physical Review Letters, 88(9).https://doi.org/10.1103/physrevlett.88.093901 
LibreCat: /record/1744
DOI: 10.1103/physrevlett.88.093901

Pertsch, T., Zentgraf, T., Peschel, U., Bräuer, A., &; Lederer, F. (2002). Beam steering in waveguide arrays. Applied Physics Letters, 80(18), 3247–3249.https://doi.org/10.1063/1.1476720 
LibreCat: /record/1745
DOI: 10.1063/1.1476720

Fischer, S. F., Apetrii, G., Skaberna, S., Kunze, U., Reuter, D., &; Wieck, A. D. (2002). Control of the confining potential in ballistic constrictions using a persistent charging effect. Applied Physics Letters, 2779–2781.https://doi.org/10.1063/1.1511278 
LibreCat: /record/8731
DOI: 10.1063/1.1511278

Fühner, C., Keyser, U. F., Haug, R. J., Reuter, D., &; Wieck, A. D. (2002). Flux-quantum-modulated Kondo conductance in a multielectron quantum dot. Physical Review B.https://doi.org/10.1103/physrevb.66.161305 
LibreCat: /record/8732
DOI: 10.1103/physrevb.66.161305

Kähler, D., Kunze, U., Reuter, D., &; Wieck, A. D. (2002). Quantum wire fabrication from compensating-layer GaAs–AlGaAs heterostructures. Microelectronic Engineering, 619–623.https://doi.org/10.1016/s0167-9317(02)00474-4 
LibreCat: /record/8733
DOI: 10.1016/s0167-9317(02)00474-4

Naud, C., Faini, G., Mailly, D., Vidal, J., Douçot, B., Montambaux, G.,https://doi.org/10.1016/s1386-9477(01)00307-1__Reuter, D. (2002). Aharonov–Bohm cages in the GaAlAs/GaAs system. Physica E: Low-Dimensional Systems and Nanostructures, 190–196.https://doi.org/10.1016/s1386-9477(01)00307-1 
LibreCat: /record/8734
DOI: 10.1016/s1386-9477(01)00307-1

Pulizzi, F., Christianen, P. C. M., Maan, J. C., Eshlaghi, S., Reuter, D., &; Wieck, A. D. (2002). Anomalous In-Plane Motion of Excitons in Single GaAs Quantum Wells. Physica Status Solidi (A), 641–645.https://doi.org/10.1002/1521-396x(200204)190:3&#60;641::aid-pssa641&#62;3.0.co;2-r 
LibreCat: /record/8735
DOI: 10.1002/1521-396x(200204)190:3<641::aid-pssa641>3.0.co;2-r

Regul, J., Keyser, U. F., Paesler, M., Hohls, F., Zeitler, U., Haug, R. J.,https://doi.org/10.1063/1.1506417__Wieck, A. D. (2002). Fabrication of quantum point contacts by engraving GaAs/AlGaAs heterostructures with a diamond tip. Applied Physics Letters, 2023–2025.https://doi.org/10.1063/1.1506417 
LibreCat: /record/8736
DOI: 10.1063/1.1506417

Reuter, D., Meier, C., Seekamp, A., &; Wieck, A. . (2002). Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping. Physica E: Low-Dimensional Systems and Nanostructures, 13, 938–941.https://doi.org/10.1016/s1386-9477(02)00239-4 
LibreCat: /record/8737
DOI: 10.1016/s1386-9477(02)00239-4

Reuter, D., Schafmeister, P., Koch, J., Schmidt, K., &; Wieck, A. . (2002). Growth of InAs quantum dots on focussed ion beam implanted GaAs(100). Materials Science and Engineering: B, 230–233.https://doi.org/10.1016/s0921-5107(01)00871-6 
LibreCat: /record/8738
DOI: 10.1016/s0921-5107(01)00871-6

Schaapman, M. R., Christianen, P. C. M., Maan, J. C., Reuter, D., &; Wieck, A. D. (2002). A multipurpose torsional magnetometer with optical detection. Applied Physics Letters, 1041–1043.https://doi.org/10.1063/1.1498152 
LibreCat: /record/8740
DOI: 10.1063/1.1498152

Schmidt, K. H., Bock, C., Kunze, U., Khorenko, V. V., Malzer, S., Döhler, G. H.,https://doi.org/10.1016/s0921-5107(01)00873-x__Wieck, A. D. (2002). Electronic structure of InAs self-assembled quantum dots. Materials Science and Engineering: B, 238–242.https://doi.org/10.1016/s0921-5107(01)00873-x 
LibreCat: /record/8741
DOI: 10.1016/s0921-5107(01)00873-x

Schulze-Wischeler, F., Zeitler, U., Hohls, F., Haug, R. J., Reuter, D., &; Wieck, A. D. (2002). Phonon excitation of a two-dimensional electron system around ;d=1. Physica E: Low-Dimensional Systems and Nanostructures, 474–477.https://doi.org/10.1016/s1386-9477(01)00342-3 
LibreCat: /record/8742
DOI: 10.1016/s1386-9477(01)00342-3

Vitzethum, M., Schmidt, R., Kiesel, P., Schafmeister, P., Reuter, D., Wieck, A. D., &; Döhler, G. H. (2002). Quantum dot micro-LEDs for the study of few-dot electroluminescence, fabricated by focussed ion beam. Physica E: Low-Dimensional Systems and Nanostructures, 143–146.https://doi.org/10.1016/s1386-9477(01)00506-9 
LibreCat: /record/8743
DOI: 10.1016/s1386-9477(01)00506-9

Vitzethum, M., Schmidt, R., Kiesel, P., Schafmeister, P., Koch, J., Reuter, D.,https://doi.org/10.1016/s1386-9477(01)00475-1__Döhler, G. H. (2002). A novel photoconductive detector for single photon detection. Physica E: Low-Dimensional Systems and Nanostructures, 570–573.https://doi.org/10.1016/s1386-9477(01)00475-1 
LibreCat: /record/8744
DOI: 10.1016/s1386-9477(01)00475-1

Versen, M., Schmidt, K. H., Bock, C., Reuter, D., Wieck, A. D., &; Kunze, U. (2002). Single-Electron Tunneling through Individual InAs Quantum Dots within a Saddle Point Potential. Physica Status Solidi (B), 669–673.https://doi.org/10.1002/(sici)1521-3951(200104)224:3&#60;669::aid-pssb669&#62;3.3.co;2-h 
LibreCat: /record/8745
DOI: 10.1002/(sici)1521-3951(200104)224:3<669::aid-pssb669>3.3.co;2-h

Reuter, D., Meier, C., Álvarez, M. A. S., &; Wieck, A. D. (2002). Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices. Applied Physics Letters, 377–379.https://doi.org/10.1063/1.1386618 
LibreCat: /record/8746
DOI: 10.1063/1.1386618

Reuter, D., Kähler, D., Kunze, U., &; Wieck, A. D. (2002). Layer-compensated selectively doped AlxG-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology, 603–607.https://doi.org/10.1088/0268-1242/16/7/314 
LibreCat: /record/8747
DOI: 10.1088/0268-1242/16/7/314

Reuter, D., Versen, M., Schneider, M. D., &; Wieck, A. D. (2002). Increased mobility anisotropy in selectively doped AlxGxAs/GaAs heterostructures with high electron densities. Journal of Applied Physics, 321–325.https://doi.org/10.1063/1.373660 
LibreCat: /record/8763
DOI: 10.1063/1.373660

Reuter, D., Kähler, D., Kunze, U., &; Wieck, A. D. (2002). Layer-compensated selectively doped AlxG-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology, 603–607.https://doi.org/10.1088/0268-1242/16/7/314 
LibreCat: /record/8768
DOI: 10.1088/0268-1242/16/7/314