Grbi B, Leturcq R, Ihn T, Ensslin K, Reuter D, Wieck AD. Aharonov–Bohm oscillations in p-type GaAs quantum rings. Physica E: Low-dimensional Systems and Nanostructures. 2007:1273-1275. doi:10.1016/j.physe.2007.08.129

Notthoff C, Lorke A, Reuter D. High sensitivity far-infrared detection by resonant inter-Landau-level scattering. Physica E: Low-dimensional Systems and Nanostructures. 2007:1328-1331. doi:10.1016/j.physe.2007.09.200

Giesbers AJM, Zeitler U, Reuter D, et al. Aharonov–Bohm effect of quantum Hall edge channels. Physica E: Low-dimensional Systems and Nanostructures. 2007:1470-1472. doi:10.1016/j.physe.2007.09.051

Lei W, Wibbelhoff O, Notthoff C, et al. Magnetic-field-induced modification of the wave-functions in InAs quantum dots. Physica E: Low-dimensional Systems and Nanostructures. 2007:1870-1872. doi:10.1016/j.physe.2007.08.045

Richter M, Reuter D, Duboz J-Y, Wieck AD. Influence of In0.15G.85As capping layers on the electron and hole energy levels of InAs quantum dots. Physica E: Low-dimensional Systems and Nanostructures. 2007:1891-1893. doi:10.1016/j.physe.2007.08.091

Reuter D, Roescu R, Mehta M, Richter M, Wieck AD. Capacitance–voltage spectroscopy of post-growth annealed InAs quantum dots. Physica E: Low-dimensional Systems and Nanostructures. 2007:1961-1964. doi:10.1016/j.physe.2007.09.061

Mehta M, Reuter D, Melnikov A, Wieck AD, Remhof A. Site-selective growth of self-assembled InAs quantum dots on focused ion beam patterned GaAs. Physica E: Low-dimensional Systems and Nanostructures. 2007:2034-2036. doi:10.1016/j.physe.2007.09.130

Marquardt B, Russ M, Lorke A, Meier C, Reuter D, Wieck AD. Quantum dots as tunable scatterers for 2D- and 1D-electron systems. Physica E: Low-dimensional Systems and Nanostructures. 2007:2075-2077. doi:10.1016/j.physe.2007.09.198

Hadzibrahimovic A, Dethlefsen AF, Reuter D, et al. A comparison: 2D electron- and hole systems in the fractional quantum Hall regime. Physica E: Low-dimensional Systems and Nanostructures. 2007:1258-1260. doi:10.1016/j.physe.2007.08.124

Wiemann M, Cetinkaya A, Wieser U, Kunze U, Reuter D, Wieck AD. Hot-electron bend resistance in a ballistic GaAs/AlGaAs cross junction. Physica E: Low-dimensional Systems and Nanostructures. 2007:2128-2130. doi:10.1016/j.physe.2007.10.025

Wieser U, Knop M, Kunze U, Reuter D, Wieck AD. Magneto-ballistic effects in non-centrosymmetric GaAs/AlGaAs cross junctions. Physica E: Low-dimensional Systems and Nanostructures. 2007:2179-2181. doi:10.1016/j.physe.2007.10.115

Bryja L, Wójs A, Misiewicz J, Potemski M, Reuter D, Wieck A. Magneto-optical probing of weak disorder in a two-dimensional hole gas. Physical Review B. 2007. doi:10.1103/physrevb.75.035308

Hövel S, Gerhardt NC, Brenner C, et al. Spin-controlled LEDs and VCSELs. physica status solidi (a). 2007:500-507. doi:10.1002/pssa.200673219

Oulton R, Greilich A, Verbin SY, et al. Subsecond Spin Relaxation Times in Quantum Dots at Zero Applied Magnetic Field Due to a Strong Electron-Nuclear Interaction. Physical Review Letters. 2007. doi:10.1103/physrevlett.98.107401

Scheibner R, Novik EG, Borzenko T, et al. Sequential and cotunneling behavior in the temperature-dependent thermopower of few-electron quantum dots. Physical Review B. 2007. doi:10.1103/physrevb.75.041301

Yugova IA, Greilich A, Zhukov EA, et al. Exciton fine structure inInGaAsGaAsquantum dots revisited by pump-probe Faraday rotation. Physical Review B. 2007. doi:10.1103/physrevb.75.195325

Greilich A, Wiemann M, Hernandez FGG, et al. Robust manipulation of electron spin coherence in an ensemble of singly charged quantum dots. Physical Review B. 2007. doi:10.1103/physrevb.75.233301

Yugova IA, Greilich A, Yakovlev DR, et al. Universal behavior of the electrongfactor inGaAsAlxGxAsquantum wells. Physical Review B. 2007. doi:10.1103/physrevb.75.245302

Pugelys A, Rizo PJ, Ivanin K, et al. Charge and spin dynamics in a two-dimensional electron gas. Journal of Physics: Condensed Matter. 2007. doi:10.1088/0953-8984/19/29/295206

Lo F-Y, Melnikov A, Reuter D, et al. Magnetic and structural properties of Gd-implanted zinc-blende GaN. Applied Physics Letters. 2007. doi:10.1063/1.2753113