Pertsch T, Zentgraf T, Peschel U, Bräuer A, Lederer F. Anomalous Refraction and Diffraction in Discrete Optical Systems. Physical Review Letters. 2002;88(9). doi:10.1103/physrevlett.88.093901

Pertsch T, Zentgraf T, Peschel U, Bräuer A, Lederer F. Beam steering in waveguide arrays. Applied Physics Letters. 2002;80(18):3247-3249. doi:10.1063/1.1476720

Fischer SF, Apetrii G, Skaberna S, Kunze U, Reuter D, Wieck AD. Control of the confining potential in ballistic constrictions using a persistent charging effect. Applied Physics Letters. 2002:2779-2781. doi:10.1063/1.1511278

Fühner C, Keyser UF, Haug RJ, Reuter D, Wieck AD. Flux-quantum-modulated Kondo conductance in a multielectron quantum dot. Physical Review B. 2002. doi:10.1103/physrevb.66.161305

Kähler D, Kunze U, Reuter D, Wieck AD. Quantum wire fabrication from compensating-layer GaAs–AlGaAs heterostructures. Microelectronic Engineering. 2002:619-623. doi:10.1016/s0167-9317(02)00474-4

Naud C, Faini G, Mailly D, et al. Aharonov–Bohm cages in the GaAlAs/GaAs system. Physica E: Low-dimensional Systems and Nanostructures. 2002:190-196. doi:10.1016/s1386-9477(01)00307-1

Pulizzi F, Christianen PCM, Maan JC, Eshlaghi S, Reuter D, Wieck AD. Anomalous In-Plane Motion of Excitons in Single GaAs Quantum Wells. physica status solidi (a). 2002:641-645. doi:10.1002/1521-396x(200204)190:3&#60;641::aid-pssa641&#62;3.0.co;2-r

Regul J, Keyser UF, Paesler M, et al. Fabrication of quantum point contacts by engraving GaAs/AlGaAs heterostructures with a diamond tip. Applied Physics Letters. 2002:2023-2025. doi:10.1063/1.1506417

Reuter D, Meier C, Seekamp A, Wieck A. Fabrication of two-dimensional in-plane gate transistors by focused ion beam doping. Physica E: Low-dimensional Systems and Nanostructures. 2002;13:938-941. doi:10.1016/s1386-9477(02)00239-4

Reuter D, Schafmeister P, Koch J, Schmidt K, Wieck A. Growth of InAs quantum dots on focussed ion beam implanted GaAs(100). Materials Science and Engineering: B. 2002:230-233. doi:10.1016/s0921-5107(01)00871-6

Schaapman MR, Christianen PCM, Maan JC, Reuter D, Wieck AD. A multipurpose torsional magnetometer with optical detection. Applied Physics Letters. 2002:1041-1043. doi:10.1063/1.1498152

Schmidt KH, Bock C, Kunze U, et al. Electronic structure of InAs self-assembled quantum dots. Materials Science and Engineering: B. 2002:238-242. doi:10.1016/s0921-5107(01)00873-x

Schulze-Wischeler F, Zeitler U, Hohls F, Haug RJ, Reuter D, Wieck AD. Phonon excitation of a two-dimensional electron system around ;d=1. Physica E: Low-dimensional Systems and Nanostructures. 2002:474-477. doi:10.1016/s1386-9477(01)00342-3

Vitzethum M, Schmidt R, Kiesel P, et al. Quantum dot micro-LEDs for the study of few-dot electroluminescence, fabricated by focussed ion beam. Physica E: Low-dimensional Systems and Nanostructures. 2002:143-146. doi:10.1016/s1386-9477(01)00506-9

Vitzethum M, Schmidt R, Kiesel P, et al. A novel photoconductive detector for single photon detection. Physica E: Low-dimensional Systems and Nanostructures. 2002:570-573. doi:10.1016/s1386-9477(01)00475-1

Versen M, Schmidt KH, Bock C, Reuter D, Wieck AD, Kunze U. Single-Electron Tunneling through Individual InAs Quantum Dots within a Saddle Point Potential. physica status solidi (b). 2002:669-673. doi:10.1002/(sici)1521-3951(200104)224:3&#60;669::aid-pssb669&#62;3.3.co;2-h

Reuter D, Meier C, Álvarez MAS, Wieck AD. Increased thermal budget for selectively doped heterostructures by employing AlAs/GaAs superlattices. Applied Physics Letters. 2002:377-379. doi:10.1063/1.1386618

Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped AlxG-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology. 2002:603-607. doi:10.1088/0268-1242/16/7/314

Reuter D, Versen M, Schneider MD, Wieck AD. Increased mobility anisotropy in selectively doped AlxGxAs/GaAs heterostructures with high electron densities. Journal of Applied Physics. 2002:321-325. doi:10.1063/1.373660

Reuter D, Kähler D, Kunze U, Wieck AD. Layer-compensated selectively doped AlxG-xAs/GaAs heterostructures as a base material for nanolithography. Semiconductor Science and Technology. 2002:603-607. doi:10.1088/0268-1242/16/7/314