Nanolithographie von Oberflächen für das Wachstum optoelektronischer Strukturen
J. Lindner, in: 2012.
LibreCat: /record/4139

First-principles and empirical potential simulation study of intrinsic and carbon-related defects in silicon
F. Zirkelbach, B. Stritzker, K. Nordlund, W.G. Schmidt, E. Rauls, J.K.N. Lindner, Physica Status Solidi (c) 9 (2012) 1968–1973.
LibreCat: /record/4136
DOI: 10.1002/pssc.201200198

ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures
L. Hiller, T. Stauden, R.M. Kemper, J. Lindner, D.J. As, J. Pezoldt, Materials Science Forum 717–720 (2012) 901–904.
LibreCat: /record/4116
DOI: 10.4028/www.scientific.net/msf.717-720.901

Relaxation of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering
M. Häberlen, B. Murphy, B. Stritzker, J. Lindner, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 272 (2011) 322–325.
LibreCat: /record/4140
DOI: 10.1016/j.nimb.2011.01.092

Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation
M. Häberlen, B. Murphy, B. Stritzker, J. Lindner, Physica Status Solidi (C) 8 (2011) 944–947.
LibreCat: /record/4142
DOI: 10.1002/pssc.201000342

Photoluminescence properties of Sm2+-doped BaB under hydrostatic pressure
M.C. Wiegand, W. Sievers, J. Lindner, T. Tröster, S. Schweizer, Journal of Luminescence 131 (2011) 2400–2403.
LibreCat: /record/4148
DOI: 10.1016/j.jlumin.2011.05.035

Combinedab initioand classical potential simulation study on silicon carbide precipitation in silicon
F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W.G. Schmidt, E. Rauls, Physical Review B 84 (2011).
LibreCat: /record/4150
DOI: 10.1103/physrevb.84.064126

Anti-phase domains in cubic GaN
R. Maria Kemper, T. Schupp, M. Häberlen, T. Niendorf, H.-J. Maier, A. Dempewolf, F. Bertram, J. Christen, R. Kirste, A. Hoffmann, J. Lindner, D. As, Journal of Applied Physics 110 (2011).
LibreCat: /record/4146
DOI: 10.1063/1.3666050

Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates
R.M. Kemper, M. Weinl, C. Mietze, M. Häberlen, T. Schupp, E. Tschumak, J. Lindner, K. Lischka, D. As, Journal of Crystal Growth 323 (2010) 84–87.
LibreCat: /record/4144
DOI: 10.1016/j.jcrysgro.2010.12.042

Plasma modification of nanosphere lithography masks made of polystyrene beads
D. Gogel, M. Weinl, J. Lindner, B. Stritzker, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 12 (2010) 740–744.
LibreCat: /record/4153

Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)
E. Tschumak, R. Granzner, J. Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, D. As, Applied Physics Letters 96 (2010).
LibreCat: /record/4194
DOI: 10.1063/1.3455066

Defects in carbon implanted silicon calculated by classical potentials and first-principles methods
F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W.G. Schmidt, E. Rauls, Physical Review B 82 (2010).
LibreCat: /record/4204
DOI: 10.1103/physrevb.82.094110

Advanced topics and applications of Transmission Electron Microscopy, Part I-II
J. Lindner, in: 2010.
LibreCat: /record/4206

Ion Beams and Nano-Engineering
D. Ila, N. Kishimoto, J. Lindner, J. Baglin, eds., Ion Beams and Nano-Engineering, MRS Symposium Proceedings , 2010.
LibreCat: /record/4207

Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks
F.J.C. Fischer, M. Weinl, J. Lindner, B. Stritzker, MRS Proceedings 1181 (2009).
LibreCat: /record/4152
DOI: 10.1557/proc-1181-dd10-02

Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001)
E. Tschumak, J. Lindner, M. Bürger, K. Lischka, H. Nagasawa, M. Abe, D. As, Physica Status Solidi (C) 7 (2009) 104–107.
LibreCat: /record/4196
DOI: 10.1002/pssc.200982615