Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)
E. Tschumak, R. Granzner, J. Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, D. As, Applied Physics Letters 96 (2010).
LibreCat: /record/4194
DOI: 10.1063/1.3455066

Defects in carbon implanted silicon calculated by classical potentials and first-principles methods
F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W.G. Schmidt, E. Rauls, Physical Review B 82 (2010).
LibreCat: /record/4204
DOI: 10.1103/physrevb.82.094110

Advanced topics and applications of Transmission Electron Microscopy, Part I-II
J. Lindner, in: 2010.
LibreCat: /record/4206

Ion Beams and Nano-Engineering
D. Ila, N. Kishimoto, J. Lindner, J. Baglin, eds., Ion Beams and Nano-Engineering, MRS Symposium Proceedings , 2010.
LibreCat: /record/4207

Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks
F.J.C. Fischer, M. Weinl, J. Lindner, B. Stritzker, MRS Proceedings 1181 (2009).
LibreCat: /record/4152
DOI: 10.1557/proc-1181-dd10-02

Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001)
E. Tschumak, J. Lindner, M. Bürger, K. Lischka, H. Nagasawa, M. Abe, D. As, Physica Status Solidi (C) 7 (2009) 104–107.
LibreCat: /record/4196
DOI: 10.1002/pssc.200982615