Lindner J. Ion Interactions with Nanopatterned Surfaces. In: ; 2013.

Achtelik J, Sievers W, Lindner J. Biomimetic approaches to create anti-reflection glass surfaces for solar cells using self-organizing techniques. Materials Science and Engineering: B. 2012;178(9):635-638. doi:10.1016/j.mseb.2012.10.014

Kemper RM, Hiller L, Stauden T, et al. Growth of cubic GaN on 3C–SiC/Si (001) nanostructures. Journal of Crystal Growth. 2012;378:291-294. doi:10.1016/j.jcrysgro.2012.10.011

Achtelik J, Kemper RM, Sievers W, Lindner J. Self-Organized Nanostructure Formation for Anti-Reflection Glass Surfaces. MRS Proceedings. 2012;1389. doi:10.1557/opl.2012.491

Brodehl C, Greulich-Weber S, Lindner J. Gyrotropic Metamaterials. In: ; 2012.

Kemper RM, Häberlen M, Schupp T, et al. Formation of defects in cubic GaN grown on nano-patterned 3C-SiC (001). physica status solidi (c). 2012;9(3-4):1028-1031. doi:10.1002/pssc.201100174

Kemper RM, Hiller L, Stauden T, et al. TEM investigation of GaN thin films grown on nanostructured 3C-SiC/Si(001) substrates. In: ; 2012.

Lindner J. Nanosphere Lithography: State-of-the-art and Future Directions. In: ; 2012.

Pauly J, Lindner J. TEM Characterization of Nickel Nanodot Arrays on Silicon formed by Nanosphere Lithography. In: ; 2012.

Lindner J. Nanokugellithographie: Grundlagen und Anwendungen. In: ; 2012.

Lindner J. Nanolithographie von Oberflächen für das Wachstum optoelektronischer Strukturen. In: ; 2012.

Zirkelbach F, Stritzker B, Nordlund K, Schmidt WG, Rauls E, Lindner JKN. First-principles and empirical potential simulation study of intrinsic and carbon-related defects in silicon. physica status solidi (c). 2012;9(10-11):1968-1973. doi:10.1002/pssc.201200198

Hiller L, Stauden T, Kemper RM, Lindner J, As DJ, Pezoldt J. ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures. Materials Science Forum. 2012;717-720:901-904. doi:10.4028/www.scientific.net/msf.717-720.901

Häberlen M, Murphy B, Stritzker B, Lindner J. Relaxation of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 2011;272:322-325. doi:10.1016/j.nimb.2011.01.092

Häberlen M, Murphy B, Stritzker B, Lindner J. Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation. physica status solidi (c). 2011;8(3):944-947. doi:10.1002/pssc.201000342

Wiegand MC, Sievers W, Lindner J, Tröster T, Schweizer S. Photoluminescence properties of Sm2+-doped BaBr2 under hydrostatic pressure. Journal of Luminescence. 2011;131(11):2400-2403. doi:10.1016/j.jlumin.2011.05.035

Zirkelbach F, Stritzker B, Nordlund K, Lindner J, Schmidt WG, Rauls E. Combinedab initioand classical potential simulation study on silicon carbide precipitation in silicon. Physical Review B. 2011;84(6). doi:10.1103/physrevb.84.064126

Maria Kemper R, Schupp T, Häberlen M, et al. Anti-phase domains in cubic GaN. Journal of Applied Physics. 2011;110(12). doi:10.1063/1.3666050

Kemper RM, Weinl M, Mietze C, et al. Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates. Journal of Crystal Growth. 2010;323(1):84-87. doi:10.1016/j.jcrysgro.2010.12.042

Gogel D, Weinl M, Lindner J, Stritzker B. Plasma modification of nanosphere lithography masks made of polystyrene beads. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS. 2010;12(3):740-744.