Nanolithographie von Oberflächen für das Wachstum optoelektronischer Strukturen
J. Lindner, in: 2012.

First-principles and empirical potential simulation study of intrinsic and carbon-related defects in silicon
F. Zirkelbach, B. Stritzker, K. Nordlund, W.G. Schmidt, E. Rauls, J.K.N. Lindner, Physica Status Solidi (c) 9 (2012) 1968–1973.

ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures
L. Hiller, T. Stauden, R.M. Kemper, J. Lindner, D.J. As, J. Pezoldt, Materials Science Forum 717–720 (2012) 901–904.

Relaxation of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering
M. Häberlen, B. Murphy, B. Stritzker, J. Lindner, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 272 (2011) 322–325.

Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation
M. Häberlen, B. Murphy, B. Stritzker, J. Lindner, Physica Status Solidi (C) 8 (2011) 944–947.

Photoluminescence properties of Sm2+-doped BaB under hydrostatic pressure
M.C. Wiegand, W. Sievers, J. Lindner, T. Tröster, S. Schweizer, Journal of Luminescence 131 (2011) 2400–2403.

Combinedab initioand classical potential simulation study on silicon carbide precipitation in silicon
F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W.G. Schmidt, E. Rauls, Physical Review B 84 (2011).

Anti-phase domains in cubic GaN
R. Maria Kemper, T. Schupp, M. Häberlen, T. Niendorf, H.-J. Maier, A. Dempewolf, F. Bertram, J. Christen, R. Kirste, A. Hoffmann, J. Lindner, D. As, Journal of Applied Physics 110 (2011).

Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates
R.M. Kemper, M. Weinl, C. Mietze, M. Häberlen, T. Schupp, E. Tschumak, J. Lindner, K. Lischka, D. As, Journal of Crystal Growth 323 (2010) 84–87.

Plasma modification of nanosphere lithography masks made of polystyrene beads
D. Gogel, M. Weinl, J. Lindner, B. Stritzker, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 12 (2010) 740–744.

Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)
E. Tschumak, R. Granzner, J. Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, D. As, Applied Physics Letters 96 (2010).

Defects in carbon implanted silicon calculated by classical potentials and first-principles methods
F. Zirkelbach, B. Stritzker, K. Nordlund, J. Lindner, W.G. Schmidt, E. Rauls, Physical Review B 82 (2010).

Advanced topics and applications of Transmission Electron Microscopy, Part I-II
J. Lindner, in: 2010.

Ion Beams and Nano-Engineering
D. Ila, N. Kishimoto, J. Lindner, J. Baglin, eds., Ion Beams and Nano-Engineering, MRS Symposium Proceedings , 2010.

Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks
F.J.C. Fischer, M. Weinl, J. Lindner, B. Stritzker, MRS Proceedings 1181 (2009).

Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001)
E. Tschumak, J. Lindner, M. Bürger, K. Lischka, H. Nagasawa, M. Abe, D. As, Physica Status Solidi (C) 7 (2009) 104–107.