Lindner, J. (2012). Nanolithographie von Oberflächen für das Wachstum optoelektronischer Strukturen. Presented at the Kolloquium des Leibniz Instituts für Oberflächenmodifizierung IOM, Leipzig (Germany).

Zirkelbach, F., Stritzker, B., Nordlund, K., Schmidt, W. G., Rauls, E., &; Lindner, J. K. N. (2012). First-principles and empirical potential simulation study of intrinsic and carbon-related defects in silicon. Physica Status Solidi (c), 9(10–11), 1968–1973.https://doi.org/10.1002/pssc.201200198 

Hiller, L., Stauden, T., Kemper, R. M., Lindner, J., As, D. J., &; Pezoldt, J. (2012). ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures. Materials Science Forum, 717–720, 901–904.https://doi.org/10.4028/www.scientific.net/msf.717-720.901 

Häberlen, M., Murphy, B., Stritzker, B., &; Lindner, J. (2011). Relaxation of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion beam defect engineering. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 272, 322–325.https://doi.org/10.1016/j.nimb.2011.01.092 

Häberlen, M., Murphy, B., Stritzker, B., &; Lindner, J. (2011). Decoupling of a strained 3C-SiC(111) thin film on silicon by He+ and O+ ion implantation. Physica Status Solidi (C), 8(3), 944–947.https://doi.org/10.1002/pssc.201000342 

Wiegand, M. C., Sievers, W., Lindner, J., Tröster, T., &; Schweizer, S. (2011). Photoluminescence properties of Sm2+-doped BaBr2 under hydrostatic pressure. Journal of Luminescence, 131(11), 2400–2403.https://doi.org/10.1016/j.jlumin.2011.05.035 

Zirkelbach, F., Stritzker, B., Nordlund, K., Lindner, J., Schmidt, W. G., &; Rauls, E. (2011). Combinedab initioand classical potential simulation study on silicon carbide precipitation in silicon. Physical Review B, 84(6).https://doi.org/10.1103/physrevb.84.064126 

Maria Kemper, R., Schupp, T., Häberlen, M., Niendorf, T., Maier, H.-J., Dempewolf, A., Bertram, F., Christen, J., Kirste, R., Hoffmann, A., Lindner, J., &; As, D. (2011). Anti-phase domains in cubic GaN. Journal of Applied Physics, 110(12), Article 123512.https://doi.org/10.1063/1.3666050 

Kemper, R. M., Weinl, M., Mietze, C., Häberlen, M., Schupp, T., Tschumak, E.,https://doi.org/10.1016/j.jcrysgro.2010.12.042__As, D. (2010). Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates. Journal of Crystal Growth, 323(1), 84–87.https://doi.org/10.1016/j.jcrysgro.2010.12.042 

Gogel, D., Weinl, M., Lindner, J., &; Stritzker, B. (2010). Plasma modification of nanosphere lithography masks made of polystyrene beads. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 12(3), 740–744.

Tschumak, E., Granzner, R., Lindner, J., Schwierz, F., Lischka, K., Nagasawa, H.,https://doi.org/10.1063/1.3455066__As, D. (2010). Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001). Applied Physics Letters, 96(25).https://doi.org/10.1063/1.3455066 

Zirkelbach, F., Stritzker, B., Nordlund, K., Lindner, J., Schmidt, W. G., &; Rauls, E. (2010). Defects in carbon implanted silicon calculated by classical potentials and first-principles methods. Physical Review B, 82(9).https://doi.org/10.1103/physrevb.82.094110 

Lindner, J. (2010). Advanced topics and applications of Transmission Electron Microscopy, Part I-II. Presented at the Guest Lectures at Departamento de Fisica Applicada, Master de Materiales Avanzados y Nanotecnologias , Universidad Autónoma de Madrid (Spain).

Ila, D., Kishimoto, N., Lindner, J., &; Baglin, J. (Eds.). (2010). Ion Beams and Nano-Engineering (Vol. 1181). Presented at the MRS Spring Meeting 2009, San Francisco (USA): MRS Symposium Proceedings .

Fischer, F. J. C., Weinl, M., Lindner, J., &; Stritzker, B. (2009). Nanoscale Surface Patterning of Silicon Using Local Swelling Induced by He Implantation through NSL-Masks. MRS Proceedings, 1181.https://doi.org/10.1557/proc-1181-dd10-02 

Tschumak, E., Lindner, J., Bürger, M., Lischka, K., Nagasawa, H., Abe, M., &; As, D. (2009). Non-polar cubic AlGaN/GaN HFETs grown by MBE on Ar+implanted 3C-SiC (001). Physica Status Solidi (C), 7(1), 104–107.https://doi.org/10.1002/pssc.200982615