Ab initio calculation of linear and nonlinear optical properties of semiconductor structures
F. Bechstedt, B. Adolph, W.G. Schmidt, Brazilian Journal of Physics 29 (1999).

SELF-ENERGY EFFECTS IN THE OPTICAL ANISOTROPY OF GaP(001)
W.G. Schmidt, J.L. FATTEBERT, J. BERNHOLC, F. BECHSTEDT, Surface Review and Letters 6 (1999) 1159–1165.

Theoretical Aspects of the Optical Response of Semiconductor Surfaces
F. Bechstedt, O. Pulci, W.G. Schmidt, Physica Status Solidi (A) 175 (1999) 5–16.

GaP(001) and InP(001): Reflectance anisotropy and surface geometry
N. Esser, W.G. Schmidt, J. Bernholc, A.M. Frisch, P. Vogt, M. Zorn, M. Pristovsek, W. Richter, F. Bechstedt, T. Hannappel, S. Visbeck, Journal of Vacuum Science &; Technology B: Microelectronics and Nanometer Structures 17 (1999).

(2×4)GaP(001) surface: Atomic structure and optical anisotropy
A.M. Frisch, W.G. Schmidt, J. Bernholc, M. Pristovsek, N. Esser, W. Richter, Physical Review B 60 (1999) 2488–2494.

Structural fingerprints in the reflectance anisotropy spectra ofInP(001)(2×4)surfaces
W.G. Schmidt, E.L. Briggs, J. Bernholc, F. Bechstedt, Physical Review B 59 (1999) 2234–2239.

Reflectance Anisotropy of GaAs(100): Theory and Experiment
A.I. Shkrebtii, N. Esser, W. Richter, W.G. Schmidt, F. Bechstedt, B.O. Fimland, A. Kley, R. Del Sole, Physical Review Letters 81 (1998) 721–724.

Geometry and electronic structure of InP(001)(2×4) reconstructions
W.G. Schmidt, F. Bechstedt, Surface Science 409 (1998) 474–484.

Atomic structure of InP(001)-(2×4): A dimer reconstruction
W.G. Schmidt, F. Bechstedt, N. Esser, M. Pristovsek, C. Schultz, W. Richter, Physical Review B 57 (1998) 14596–14599.

In-induced (4 × 2) reconstructions of GaAs(001) surfaces
W.G. Schmidt, P. Käckell, F. Bechstedt, Applied Surface Science 123–124 (1998) 136–140.