F. Bechstedt, B. Adolph, and W. G. Schmidt, “Ab initio calculation of linear and nonlinear optical properties of semiconductor structures,” Brazilian Journal of Physics, vol. 29, no. 4, 1999.

W. G. Schmidt, J. L. FATTEBERT, J. BERNHOLC, and F. BECHSTEDT, “SELF-ENERGY EFFECTS IN THE OPTICAL ANISOTROPY OF GaP(001),” Surface Review and Letters, vol. 6, no. 6, pp. 1159–1165, 1999.

F. Bechstedt, O. Pulci, and W. G. Schmidt, “Theoretical Aspects of the Optical Response of Semiconductor Surfaces,” physica status solidi (a), vol. 175, no. 5, pp. 5–16, 1999.

N. Esser et al., “GaP(001) and InP(001): Reflectance anisotropy and surface geometry,” Journal of Vacuum Science &; Technology B: Microelectronics and Nanometer Structures, vol. 17, no. 4, 1999.

A. M. Frisch, W. G. Schmidt, J. Bernholc, M. Pristovsek, N. Esser, and W. Richter, “(2×4)GaP(001) surface: Atomic structure and optical anisotropy,” Physical Review B, vol. 60, no. 4, pp. 2488–2494, 1999.

W. G. Schmidt, E. L. Briggs, J. Bernholc, and F. Bechstedt, “Structural fingerprints in the reflectance anisotropy spectra ofInP(001)(2×4)surfaces,” Physical Review B, vol. 59, no. 3, pp. 2234–2239, 1999.

A. I. Shkrebtii et al., “Reflectance Anisotropy of GaAs(100): Theory and Experiment,” Physical Review Letters, vol. 81, no. 3, pp. 721–724, 1998.

W. G. Schmidt and F. Bechstedt, “Geometry and electronic structure of InP(001)(2×4) reconstructions,” Surface Science, vol. 409, no. 3, pp. 474–484, 1998.

W. G. Schmidt, F. Bechstedt, N. Esser, M. Pristovsek, C. Schultz, and W. Richter, “Atomic structure of InP(001)-(2×4): A dimer reconstruction,” Physical Review B, vol. 57, no. 23, pp. 14596–14599, 1998.

W. G. Schmidt, P. Käckell, and F. Bechstedt, “In-induced (4 × 2) reconstructions of GaAs(001) surfaces,” Applied Surface Science, vol. 123–124, pp. 136–140, 1998.