Schmidt, W. G., &; Bechstedt, F. (1995). Se/GaAs(110): Atomic and electronic structure. Physical Review B, 50(23), 17280–17291.https://doi.org/10.1103/physrevb.50.17280 

Bechstedt, F., Schmidt, W. G., &; Wenzien, B. (1994). Energetics and Structure of Ordered Sb Overlayers and Sb Clusters on GaAs(110) Probed by Ab Initio Calculations. Europhysics Letters (EPL), 25(5), 357–362.https://doi.org/10.1209/0295-5075/25/5/008 

Schmidt, W. G., &; Srivastava, G. (1994). First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110). Solid State Communications, 89(4), 345–348.https://doi.org/10.1016/0038-1098(94)90597-5 

Schmidt, W. G., Wenzien, B., &; Bechstedt, F. (1994). Coverage-dependent bonding of Sb on GaAs (110). Surface Science, 307–309(Part A), 235–240.https://doi.org/10.1016/0039-6028(94)90400-6 

Schmidt, W. G., Wenzien, B., &; Bechstedt, F. (1994). Chemisorption of antimony on GaAs(110). Physical Review B, 49(7), 4731–4744.https://doi.org/10.1103/physrevb.49.4731 

Schmidt, W. G., &; Srivastava, G. P. (1993). Chemisorption of aluminium on GaAs(110). Journal of Physics: Condensed Matter, 5(49), 9025–9036.https://doi.org/10.1088/0953-8984/5/49/005 

Schmidt, W. G., Wenzien, B., &; Bechstedt, F. (1993). AB initio calculation of the atomic and electronic structure for Sb adsorbed on GaAs(110). Czechoslovak Journal of Physics, 43(9–10), 1003–1007.https://doi.org/10.1007/bf01595293