Molecular electronic excitations calculated from a solid-state approach: Methodology and numerics
P.H. Hahn, W.G. Schmidt, F. Bechstedt, Physical Review B 72 (2005).
LibreCat: /record/13846
DOI: 10.1103/physrevb.72.245425

Ga-Rich Limit of Surface Reconstructions on GaAs(001): Atomic Structure of the(4×6)Phase
A. Ohtake, P. Kocán, K. Seino, W.G. Schmidt, N. Koguchi, Physical Review Letters 93 (2004) 266101.
LibreCat: /record/13710
DOI: 10.1103/physrevlett.93.266101

O on Si(001): surface optical anisotropy from first-principles calculations
K. Seino, W.G. Schmidt, Surface Science 571 (2004) 157–160.
LibreCat: /record/13711
DOI: 10.1016/j.susc.2004.08.012

Oxidation- and organic-molecule-induced changes of the Si surface optical anisotropy:ab initiopredictions
W.G. Schmidt, F. Fuchs, A. Hermann, K. Seino, F. Bechstedt, R. Paßmann, M. Wahl, M. Gensch, K. Hinrichs, N. Esser, S. Wang, W. Lu, J. Bernholc, Journal of Physics: Condensed Matter 16 (2004) 23–34.
LibreCat: /record/13712
DOI: 10.1088/0953-8984/16/39/007

The Bethe–Salpeter equation: a first-principles approach for calculating surface optical spectra
M. Palummo, O. Pulci, R.D. Sole, A. Marini, P. Hahn, W.G. Schmidt, F. Bechstedt, Journal of Physics: Condensed Matter 16 (2004) 13–22.
LibreCat: /record/13713
DOI: 10.1088/0953-8984/16/39/006

Methylchloride adsorbed on Si(001): an ab initio study
M. Preuss, W.G. Schmidt, K. Seino, F. Bechstedt, Applied Surface Science 234 (2004) 155–161.
LibreCat: /record/13715
DOI: 10.1016/j.apsusc.2004.05.041

Atomic indium nanowires on Si(111): the (4 × 1)–(8 × 2) phase transition studied with reflectance anisotropy spectroscopy
K. Fleischer, S. Chandola, N. Esser, W. Richter, J.. McGilp, W.G. Schmidt, S. Wang, W. Lu, J. Bernholc, Applied Surface Science 234 (2004) 302–306.
LibreCat: /record/13716
DOI: 10.1016/j.apsusc.2004.05.114

Energetics of Si(001) Surfaces Exposed to Electric Fields and Charge Injection
K. Seino, W.G. Schmidt, F. Bechstedt, Physical Review Letters 93 (2004).
LibreCat: /record/13717
DOI: 10.1103/physrevlett.93.036101

Methyl Chloride Adsorption on Si(001)Electronic Structure
M. Preuss, W.G. Schmidt, F. Bechstedt, The Journal of Physical Chemistry B 108 (2004) 7809–7813.
LibreCat: /record/13718
DOI: 10.1021/jp049661z

Organic modification of surface electronic properties:A first-principles study of uracil on Si(001)
K. Seino, W.G. Schmidt, F. Bechstedt, Physical Review B 69 (2004) 245309.
LibreCat: /record/13719
DOI: 10.1103/physrevb.69.245309

Calculation of surface optical properties: from qualitative understanding to quantitative predictions
W.G. Schmidt, K. Seino, P.H. Hahn, F. Bechstedt, W. Lu, S. Wang, J. Bernholc, Thin Solid Films 455–456 (2004) 764–771.
LibreCat: /record/13720
DOI: 10.1016/j.tsf.2003.11.263

Reflectance anisotropy of uracil covered Si(001) surfaces: Ab initio predictions
K. Seino, W.G. Schmidt, Surface Science 548 (2004) 183–186.
LibreCat: /record/13721
DOI: 10.1016/j.susc.2003.11.002

Ground- and excited-state properties of DNA base molecules from plane-wave calculations using ultrasoft pseudopotentials
M. Preuss, W.G. Schmidt, K. Seino, J. Furthmüller, F. Bechstedt, Journal of Computational Chemistry 25 (2004) 112–122.
LibreCat: /record/13722
DOI: 10.1002/jcc.10372

Many-body and overlayer effects on surface optical properties
F. Bechstedt, R. Del Sole, S. Glutsch, P.H. Hahn, O. Pulci, W.G. Schmidt, Physica Status Solidi (B) 240 (2003) 469–479.
LibreCat: /record/13723
DOI: 10.1002/pssb.200303827

Gallium-rich reconstructions on GaAs(001)
M. Pristovsek, S. Tsukamoto, A. Ohtake, N. Koguchi, B.G. Orr, W.G. Schmidt, J. Bernholc, Physica Status Solidi (B) 240 (2003) 91–98.
LibreCat: /record/13724
DOI: 10.1002/pssb.200301885

Cycloaddition reaction versus dimer cleavage at theSi(001):interface
W. Lu, W.G. Schmidt, J. Bernholc, Physical Review B 68 (2003) 115327.
LibreCat: /record/13725
DOI: 10.1103/physrevb.68.115327

Layer-by-layer analysis of surface reflectance anisotropy in semiconductors
C. Castillo, B.S. Mendoza, W.G. Schmidt, P.H. Hahn, F. Bechstedt, Physical Review B 68 (2003) 041310(R).
LibreCat: /record/13726
DOI: 10.1103/physrevb.68.041310

Nanowire-induced optical anisotropy of the Si(111)-In surface
S. Wang, W. Lu, W.G. Schmidt, J. Bernholc, Physical Review B 68 (2003) 035329.
LibreCat: /record/13727
DOI: 10.1103/physrevb.68.035329

P-richGaP(001)(2×1)/(2×2)surface:A hydrogen-adsorbate structure determined from first-principles calculations
P.H. Hahn, W.G. Schmidt, F. Bechstedt, O. Pulci, R. Del Sole, Physical Review B 68 (2003) 033311.
LibreCat: /record/13728
DOI: 10.1103/physrevb.68.033311

Pyrrole (NH) and Polypyrrole Functionalized  Silicon Surfaces Calculated from First Principles
W.G. Schmidt, K. Seino, Surface Review and Letters 10 (2003) 221–226.
LibreCat: /record/13729
DOI: 10.1142/s0218625x03004901

Surface Ordering of P-rich InP(001): Hydrogen Stabilization vs Electron Correlation
P.H. Hahn, W.G. Schmidt, Surface Review and Letters 10 (2003) 163–167.
LibreCat: /record/13730
DOI: 10.1142/s0218625x03004913

Uracil Adsorbed on Si(001):  Structure and Energetics
K. Seino, W.G. Schmidt, M. Preuss, F. Bechstedt, The Journal of Physical Chemistry B 107 (2003) 5031–5035.
LibreCat: /record/13732
DOI: 10.1021/jp0342531

InP(001)-(2×1) Surface: A Hydrogen Stabilized Structure
W.G. Schmidt, P.H. Hahn, F. Bechstedt, N. Esser, P. Vogt, A. Wange, W. Richter, Physical Review Letters 90 (2003) 126101.
LibreCat: /record/13733
DOI: 10.1103/physrevlett.90.126101

EfficientO(N2)method to solve the Bethe-Salpeter equation
W.G. Schmidt, S. Glutsch, P.H. Hahn, F. Bechstedt, Physical Review B 67 (2003) 085307.
LibreCat: /record/13734
DOI: 10.1103/physrevb.67.085307

Chemisorption of pyrrole and polypyrrole on Si(001)
K. Seino, W.G. Schmidt, J. Furthmüller, F. Bechstedt, Physical Review B 66 (2003) 235323.
LibreCat: /record/13735
DOI: 10.1103/physrevb.66.235323

Interplay of surface reconstruction and surface electric fields in the optical anisotropy of GaAs(001)
W.G. Schmidt, F. Bechstedt, W. Lu, J. Bernholc, Physical Review B 66 (2002) 0855334.
LibreCat: /record/13736
DOI: 10.1103/physrevb.66.085334

Structure and energetics of Ga-rich GaAs() surfaces
K. Seino, W.G. Schmidt, F. Bechstedt, J. Bernholc, Surface Science 507–510 (2002) 406–410.
LibreCat: /record/13737
DOI: 10.1016/s0039-6028(02)01278-5

GaAs(001) surface reconstructions: geometries, chemical bonding and optical properties
W.G. Schmidt, F. Bechstedt, J. Bernholc, Applied Surface Science 190 (2002) 264–268.
LibreCat: /record/13738
DOI: 10.1016/s0169-4332(01)00862-5

III-V compound semiconductor (001) surfaces
W.G. Schmidt, Applied Physics A: Materials Science &; Processing 75 (2002) 89–99.
LibreCat: /record/13739
DOI: 10.1007/s003390101058

Bulk Excitonic Effects in Surface Optical Spectra
P.H. Hahn, W.G. Schmidt, F. Bechstedt, Physical Review Letters 88 (2002).
LibreCat: /record/13740
DOI: 10.1103/physrevlett.88.016402

GaAs(001): Surface Structure and Optical Properties
W.G. Schmidt, F. Bechstedt, K. Fleischer, C. Cobet, N. Esser, W. Richter, J. Bernholc, G. Onida, Physica Status Solidi (A) 188 (2002) 1401–1409.
LibreCat: /record/13741
DOI: 10.1002/1521-396x(200112)188:4<1401::aid-pssa1401>3.0.co;2-1

Towards a Complete Many-Body Description: Optical Response of Real Surfaces
F. Bechstedt, W.G. Schmidt, P.H. Hahn, Physica Status Solidi (A) 188 (2002) 1383–1392.
LibreCat: /record/13742
DOI: 10.1002/1521-396x(200112)188:4<1383::aid-pssa1383>3.0.co;2-g

Theory for Modeling the Optical Properties of Surfaces
G. Onida, W.G. Schmidt, O. Pulci, M. Palummo, A. Marini, C. Hogan, R. Del Sole, Physica Status Solidi (A) 188 (2002) 1233–1242.
LibreCat: /record/13745
DOI: 10.1002/1521-396x(200112)188:4<1233::aid-pssa1233>3.0.co;2-w

X-ray diffraction analysis of the gallium-rich surface of GaAs(001)
D. Paget, Y. Garreau, M. Sauvage, P. Chiaradia, R. Pinchaux, W.G. Schmidt, Physical Review B 64 (2002) 161305(R).
LibreCat: /record/13749
DOI: 10.1103/physrevb.64.161305

First-principles study of InP and GaP(001) surfaces
O. Pulci, K. Lüdge, P. Vogt, N. Esser, W.G. Schmidt, W. Richter, F. Bechstedt, Computational Materials Science (2002) 32–37.
LibreCat: /record/13750
DOI: 10.1016/s0927-0256(01)00161-6

On the origin of resonance features in reflectance difference data of silicon
K. Hingerl, R.. Balderas-Navarro, A. Bonanni, P. Tichopadek, W. Schmidt, Applied Surface Science 175–176 (2002) 769–776.
LibreCat: /record/13752
DOI: 10.1016/s0169-4332(01)00114-3

Terrace and step contributions to the optical anisotropy of Si(001) surfaces
W.G. Schmidt, F. Bechstedt, J. Bernholc, Physical Review B 63 (2002) 045322.
LibreCat: /record/13754
DOI: 10.1103/physrevb.63.045322

Optical Anisotropy of theSiC(001)-(3×2)Surface: Evidence for the Two-Adlayer Asymmetric-Dimer Model
W. Lu, W.G. Schmidt, E.L. Briggs, J. Bernholc, Physical Review Letters 85 (2002) 4381–4384.
LibreCat: /record/13755
DOI: 10.1103/physrevlett.85.4381

Atomic structure and optical anisotropy of III–V(001) surfaces
N. Esser, W.G. Schmidt, C. Cobet, K. Fleischer, A.I. Shkrebtii, B.O. Fimland, W. Richter, Journal of Vacuum Science &; Technology B: Microelectronics and Nanometer Structures 19 (2001).
LibreCat: /record/13751
DOI: 10.1116/1.1394730

Structure and Energetics of P-rich GaP(001) Surfaces
O. Pulci, W.G. Schmidt, F. Bechstedt, Physica Status Solidi (A) 184 (2001) 105–110.
LibreCat: /record/13753
DOI: 10.1002/1521-396x(200103)184:1<105::aid-pssa105>3.0.co;2-d

On the origin of resonance features in reflectance difference data of silicon
K. Hingerl, R.. Balderas-Navarro, A. Bonanni, P. Tichopadek, W.G. Schmidt, Applied Surface Science 175–176 (2001) 769–776.
LibreCat: /record/13847
DOI: 10.1016/s0169-4332(01)00114-3

Terrace and step contributions to the optical anisotropy of Si(001) surfaces
W.G. Schmidt, F. Bechstedt, J. Bernholc, Physical Review B 63 (2001).
LibreCat: /record/13849
DOI: 10.1103/physrevb.63.045322

First-principles study of (2×1) and (2×2) phosphorus-rich InP(001) surfaces
O. Pulci, K. Lüdge, W.G. Schmidt, F. Bechstedt, Surface Science 464 (2000) 272–282.
LibreCat: /record/13756
DOI: 10.1016/s0039-6028(00)00729-9

(001) Surfaces of GaP and InP: structural motifs, electronic states and optical signatures
W.G. Schmidt, J. Bernholc, F. Bechstedt, Applied Surface Science 166 (2000) 179–184.
LibreCat: /record/13757
DOI: 10.1016/s0169-4332(00)00406-2

Angle Resolved Photoemission Spectroscopy of the InP(001) surface
A.M. Frisch, P. Vogt, S. Visbeck, T. Hannappel, F. Willig, W. Braun, W. Richter, J. Bernholc, W.G. Schmidt, N. Esser, Applied Surface Science 166 (2000) 224–230.
LibreCat: /record/13758
DOI: 10.1016/s0169-4332(00)00431-1

Surface phase diagram of (2×4) and (4×2) reconstructions of GaAs(001)
W.G. Schmidt, S. Mirbt, F. Bechstedt, Physical Review B 62 (2000) 8087–8091.
LibreCat: /record/13759
DOI: 10.1103/physrevb.62.8087

Understanding reflectance anisotropy: Surface-state signatures and bulk-related features in the optical spectrum ofInP(001)(2×4)
W.G. Schmidt, N. Esser, A.M. Frisch, P. Vogt, J. Bernholc, F. Bechstedt, M. Zorn, T. Hannappel, S. Visbeck, F. Willig, W. Richter, Physical Review B 61 (2000) 335–338.
LibreCat: /record/13760
DOI: 10.1103/physrevb.61.r16335

Understanding reflectance anisotropy: Surface-state signatures and bulk-related features
W.G. Schmidt, F. Bechstedt, J. Bernholc, Journal of Vacuum Science &; Technology B: Microelectronics and Nanometer Structures 18 (2000).
LibreCat: /record/13761
DOI: 10.1116/1.1305289

Step-induced optical anisotropy of Si(111):H surfaces
W.G. Schmidt, J. Bernholc, Physical Review B 61 (2000) 7604–7608.
LibreCat: /record/13762
DOI: 10.1103/physrevb.61.7604

Large-Scale Applications of Real-Space Multigrid Methods to Surfaces, Nanotubes and Quantum Transport
J. Bernholc, E.L. Briggs, C. Bungaro, M. Buongiorno Nardelli, J.-L. Fattebert, K. Rapcewicz, C. Roland, W.G. Schmidt, Q. Zhao, in: Computer Simulation of Materials at Atomic Level, physica status solidi (b), 2000, pp. 685–701.
LibreCat: /record/13763
DOI: 10.1002/3527603107.ch33

Ab initio calculation of linear and nonlinear optical properties of semiconductor structures
F. Bechstedt, B. Adolph, W.G. Schmidt, Brazilian Journal of Physics 29 (1999).
LibreCat: /record/13764
DOI: 10.1590/s0103-97331999000400007

SELF-ENERGY EFFECTS IN THE OPTICAL ANISOTROPY OF GaP(001)
W.G. Schmidt, J.L. FATTEBERT, J. BERNHOLC, F. BECHSTEDT, Surface Review and Letters 6 (1999) 1159–1165.
LibreCat: /record/13765
DOI: 10.1142/s0218625x99001281

Theoretical Aspects of the Optical Response of Semiconductor Surfaces
F. Bechstedt, O. Pulci, W.G. Schmidt, Physica Status Solidi (A) 175 (1999) 5–16.
LibreCat: /record/13766
DOI: 10.1002/(sici)1521-396x(199909)175:1<5::aid-pssa5>3.0.co;2-9

GaP(001) and InP(001): Reflectance anisotropy and surface geometry
N. Esser, W.G. Schmidt, J. Bernholc, A.M. Frisch, P. Vogt, M. Zorn, M. Pristovsek, W. Richter, F. Bechstedt, T. Hannappel, S. Visbeck, Journal of Vacuum Science &; Technology B: Microelectronics and Nanometer Structures 17 (1999).
LibreCat: /record/13767
DOI: 10.1116/1.590810

(2×4)GaP(001) surface: Atomic structure and optical anisotropy
A.M. Frisch, W.G. Schmidt, J. Bernholc, M. Pristovsek, N. Esser, W. Richter, Physical Review B 60 (1999) 2488–2494.
LibreCat: /record/13768
DOI: 10.1103/physrevb.60.2488

Structural fingerprints in the reflectance anisotropy spectra ofInP(001)(2×4)surfaces
W.G. Schmidt, E.L. Briggs, J. Bernholc, F. Bechstedt, Physical Review B 59 (1999) 2234–2239.
LibreCat: /record/13769
DOI: 10.1103/physrevb.59.2234

Reflectance Anisotropy of GaAs(100): Theory and Experiment
A.I. Shkrebtii, N. Esser, W. Richter, W.G. Schmidt, F. Bechstedt, B.O. Fimland, A. Kley, R. Del Sole, Physical Review Letters 81 (1998) 721–724.
LibreCat: /record/13771
DOI: 10.1103/physrevlett.81.721

Geometry and electronic structure of InP(001)(2×4) reconstructions
W.G. Schmidt, F. Bechstedt, Surface Science 409 (1998) 474–484.
LibreCat: /record/13772
DOI: 10.1016/s0039-6028(98)00260-x

Atomic structure of InP(001)-(2×4): A dimer reconstruction
W.G. Schmidt, F. Bechstedt, N. Esser, M. Pristovsek, C. Schultz, W. Richter, Physical Review B 57 (1998) 14596–14599.
LibreCat: /record/13773
DOI: 10.1103/physrevb.57.14596

In-induced (4 × 2) reconstructions of GaAs(001) surfaces
W.G. Schmidt, P. Käckell, F. Bechstedt, Applied Surface Science 123–124 (1998) 136–140.
LibreCat: /record/13774
DOI: 10.1016/s0169-4332(97)00510-2

A High Resolution Investigation of the Anisotropic Electron-Positron Momentum Distribution in Diamond
R.W.N. Nilen, S.H. Connell, D.T. Britton, C.G. Fischer, E.J. Sendezera, W.G. Schmidt, J.P.F. Sellschop, W.S. Verwoerd, Materials Science Forum 255–257 (1997) 475–478.
LibreCat: /record/13859
DOI: 10.4028/www.scientific.net/msf.255-257.475

(4×2) and (2×4) reconstructions of GaAs and InP(001) surfaces
W.G. Schmidt, Applied Physics A: Materials Science &; Processing 65 (1997) 581–586.
LibreCat: /record/13775
DOI: 10.1007/s003390050625

The anisotropic electron - positron momentum distribution in diamond
R.W.N. Nilen, S.H. Connell, D.T. Britton, C.G. Fischer, E.J. Sendezera, P. Schaaff, W.G. Schmidt, J.P.F. Sellschop, W.S. Verwoerd, Journal of Physics: Condensed Matter 9 (1997) 6323–6333.
LibreCat: /record/13776
DOI: 10.1088/0953-8984/9/29/017

As on InP(110) studied within density-functional theory
U. Grossner, W.G. Schmidt, F. Bechstedt, Physical Review B 56 (1997) 6719–6726.
LibreCat: /record/13777
DOI: 10.1103/physrevb.56.6719

Chemisorption of arsenic on InP(110)
U. Großner, W.G. Schmidt, F. Bechstedt, P.V. Santos, B. Koopmans, N. Esser, Surface Science 377–379 (1997) 619–622.
LibreCat: /record/13778
DOI: 10.1016/s0039-6028(96)01469-0

Comparison of As-rich and Sb-terminated GaAs(100)(2 × 4) reconstructions
W.G. Schmidt, F. Bechstedt, Surface Science 377–379 (1997) 11–14.
LibreCat: /record/13779
DOI: 10.1016/s0039-6028(96)01318-0

Antimony-stabilized GaAs(001)(2×4) reconstructions
W.G. Schmidt, F. Bechstedt, Physical Review B 55 (1997) 13051–13057.
LibreCat: /record/13780
DOI: 10.1103/physrevb.55.13051

Electron-positron momentum density distribution in diamond
R.W.N. Nilen, S.H. Connell, W.G. Schmidt, D.T. Britton, W.S. Verwoerd, J.P.F. Sellschop, S. Shrivastava, Applied Surface Science 116 (1997) 330–334.
LibreCat: /record/13781
DOI: 10.1016/s0169-4332(96)01078-1

Atomic Structure of the Sb-Stabilized GaAs(100)-(2×4) Surface
N. Esser, A.I. Shkrebtii, U. Resch-Esser, C. Springer, W. Richter, W.G. Schmidt, F. Bechstedt, R. Del Sole, Physical Review Letters 77 (1996) 4402–4405.
LibreCat: /record/13782
DOI: 10.1103/physrevlett.77.4402

Geometry and electronic structure of GaAs(001)(2×4) reconstructions
W.G. Schmidt, F. Bechstedt, Physical Review B 54 (1996) 16742–16748.
LibreCat: /record/13783
DOI: 10.1103/physrevb.54.16742

Optical Properties of Ordered As Layers on InP(110) Surfaces
P.V. Santos, B. Koopmans, N. Esser, W.G. Schmidt, F. Bechstedt, Physical Review Letters 77 (1996) 759–762.
LibreCat: /record/13784
DOI: 10.1103/physrevlett.77.759

Atomic structures of GaAs(100)-(2 × 4) reconstructions
W.G. Schmidt, F. Bechstedt, Surface Science 360 (1996) L473–L477.
LibreCat: /record/13785
DOI: 10.1016/0039-6028(96)00728-5

Adatoms and vacancies on the diamond(111) surface
F. Bechstedt, W.G. Schmidt, A. Scholze, Europhysics Letters (EPL) 35 (1996) 585–590.
LibreCat: /record/13786
DOI: 10.1209/epl/i1996-00155-0

Adsorption of group-V elements on III–V (1 1 0) surfaces
W. Schmidt, Surface Science Reports 25 (1996) 141–223.
LibreCat: /record/13787
DOI: 10.1016/s0167-5729(96)00006-4

Annihilation of delocalized positrons: a comparison of diamond and silicon
W.G. Schmidt, W.. Verwoerd, Physics Letters A 222 (1996) 275–280.
LibreCat: /record/13788
DOI: 10.1016/0375-9601(96)00653-6

Structure of the diamond (111) surface: Single-dangling-bond versus triple-dangling-bond face
A. Scholze, W.G. Schmidt, F. Bechstedt, Physical Review B 53 (1996) 13725–13733.
LibreCat: /record/13789
DOI: 10.1103/physrevb.53.13725

3d core-level shifts at
W.G. Schmidt, P. Käckell, F. Bechstedt, Surface Science 357–358 (1996) 545–549.
LibreCat: /record/13790
DOI: 10.1016/0039-6028(96)00220-8

Diamond (111) and (100) surface reconstructions
A. Scholze, W.G. Schmidt, F. Bechstedt, Thin Solid Films 281–282 (1996) 256–259.
LibreCat: /record/13791
DOI: 10.1016/0040-6090(96)08646-4

Phonons at III–V (110) surfaces
W.G. Schmidt, F. Bechstedt, G.P. Srivastava, Surface Science 352–354 (1996) 83–88.
LibreCat: /record/13792
DOI: 10.1016/0039-6028(95)01095-5

Dimerized, buckled, or ideal chains on the diamond (111)2 × 1 surface?
W.G. Schmidt, A. Scholze, F. Bechstedt, Surface Science 351 (1996) 183–188.
LibreCat: /record/13793
DOI: 10.1016/0039-6028(95)01270-2

Se-induced 3d core-level shifts of GaAs(110)
P. Käckell, W.G. Schmidt, F. Bechstedt, Applied Surface Science 104–105 (1996) 141–146.
LibreCat: /record/13794
DOI: 10.1016/s0169-4332(96)00135-3

Diamond (111) and (100) surface: ab initio study of the atomic and electronic structure
A. Scholze, W.G. Schmidt, P. Käckell, F. Bechstedt, Materials Science and Engineering: B 37 (1996) 158–161.
LibreCat: /record/13795
DOI: 10.1016/0921-5107(95)01477-2

Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces
P.V. Santos, N. Esser, J. Groenen, M. Cardona, W.G. Schmidt, F. Bechstedt, Physical Review B 52 (1995) 17379–17385.
LibreCat: /record/13796
DOI: 10.1103/physrevb.52.17379

Optical properties of Sb-terminated GaAs and InP (110) surfaces
P.V. Santos, N. Esser, M. Cardona, W.G. Schmidt, F. Bechstedt, Physical Review B 52 (1995) 12158–12167.
LibreCat: /record/13797
DOI: 10.1103/physrevb.52.12158

III-V(110) surface dynamics from anab initiofrozen-phonon approach
W.G. Schmidt, F. Bechstedt, G.P. Srivastava, Physical Review B 52 (1995) 2001–2007.
LibreCat: /record/13798
DOI: 10.1103/physrevb.52.2001

Se/GaAs(110): energetics and structure
W.G. Schmidt, F. Bechstedt, Surface Science 331–333 (1995) 557–563.
LibreCat: /record/13799
DOI: 10.1016/0039-6028(95)00317-7

Quasi-particle band structure of C(111)2 × 1 and C(100)2 × 1 surfaces
C. Kress, M. Fiedler, W.G. Schmidt, F. Bechstedt, Surface Science 331–333 (1995) 1152–1156.
LibreCat: /record/13800
DOI: 10.1016/0039-6028(95)00160-3

III-V(110)/Sb(1 ML): structural and dynamical properties
W.G. Schmidt, G.P. Srivastava, Surface Science 331–333 (1995) 540–545.
LibreCat: /record/13801
DOI: 10.1016/0039-6028(95)00304-5

Geometrical and electronic structure of the reconstructed diamond (100) surface
C. Kress, M. Fiedler, W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17697–17700.
LibreCat: /record/13850
DOI: 10.1103/physrevb.50.17697

Exchange reactions versus adsorption geometries for Se/GaAs(110)
W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17651–17654.
LibreCat: /record/13851
DOI: 10.1103/physrevb.50.17651

Se/GaAs(110): Atomic and electronic structure
W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17280–17291.
LibreCat: /record/13852
DOI: 10.1103/physrevb.50.17280

Energetics and Structure of Ordered Sb Overlayers and Sb Clusters on GaAs(110) Probed by Ab Initio Calculations
F. Bechstedt, W.G. Schmidt, B. Wenzien, Europhysics Letters (EPL) 25 (1994) 357–362.
LibreCat: /record/13853
DOI: 10.1209/0295-5075/25/5/008

First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110)
W.G. Schmidt, G. Srivastava, Solid State Communications 89 (1994) 345–348.
LibreCat: /record/13854
DOI: 10.1016/0038-1098(94)90597-5

Coverage-dependent bonding of Sb on GaAs (110)
W.G. Schmidt, B. Wenzien, F. Bechstedt, Surface Science 307–309 (1994) 235–240.
LibreCat: /record/13855
DOI: 10.1016/0039-6028(94)90400-6

Chemisorption of antimony on GaAs(110)
W.G. Schmidt, B. Wenzien, F. Bechstedt, Physical Review B 49 (1994) 4731–4744.
LibreCat: /record/13856
DOI: 10.1103/physrevb.49.4731

Chemisorption of aluminium on GaAs(110)
W.G. Schmidt, G.P. Srivastava, Journal of Physics: Condensed Matter 5 (1993) 9025–9036.
LibreCat: /record/13857
DOI: 10.1088/0953-8984/5/49/005

AB initio calculation of the atomic and electronic structure for Sb adsorbed on GaAs(110)
W.G. Schmidt, B. Wenzien, F. Bechstedt, Czechoslovak Journal of Physics 43 (1993) 1003–1007.
LibreCat: /record/13858
DOI: 10.1007/bf01595293