Se/GaAs(110): Atomic and electronic structure
W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17280–17291.
LibreCat: /record/13852
DOI: 10.1103/physrevb.50.17280

Energetics and Structure of Ordered Sb Overlayers and Sb Clusters on GaAs(110) Probed by Ab Initio Calculations
F. Bechstedt, W.G. Schmidt, B. Wenzien, Europhysics Letters (EPL) 25 (1994) 357–362.
LibreCat: /record/13853
DOI: 10.1209/0295-5075/25/5/008

First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110)
W.G. Schmidt, G. Srivastava, Solid State Communications 89 (1994) 345–348.
LibreCat: /record/13854
DOI: 10.1016/0038-1098(94)90597-5

Coverage-dependent bonding of Sb on GaAs (110)
W.G. Schmidt, B. Wenzien, F. Bechstedt, Surface Science 307–309 (1994) 235–240.
LibreCat: /record/13855
DOI: 10.1016/0039-6028(94)90400-6

Chemisorption of antimony on GaAs(110)
W.G. Schmidt, B. Wenzien, F. Bechstedt, Physical Review B 49 (1994) 4731–4744.
LibreCat: /record/13856
DOI: 10.1103/physrevb.49.4731

Chemisorption of aluminium on GaAs(110)
W.G. Schmidt, G.P. Srivastava, Journal of Physics: Condensed Matter 5 (1993) 9025–9036.
LibreCat: /record/13857
DOI: 10.1088/0953-8984/5/49/005

AB initio calculation of the atomic and electronic structure for Sb adsorbed on GaAs(110)
W.G. Schmidt, B. Wenzien, F. Bechstedt, Czechoslovak Journal of Physics 43 (1993) 1003–1007.
LibreCat: /record/13858
DOI: 10.1007/bf01595293