Bechstedt, F., Adolph, B., &; Schmidt, W. G. (1999). Ab initio calculation of linear and nonlinear optical properties of semiconductor structures. Brazilian Journal of Physics, 29(4).https://doi.org/10.1590/s0103-97331999000400007 
LibreCat: /record/13764
DOI: 10.1590/s0103-97331999000400007

Schmidt, W. G., FATTEBERT, J. L., BERNHOLC, J., &; BECHSTEDT, F. (1999). SELF-ENERGY EFFECTS IN THE OPTICAL ANISOTROPY OF GaP(001). Surface Review and Letters, 6(6), 1159–1165.https://doi.org/10.1142/s0218625x99001281 
LibreCat: /record/13765
DOI: 10.1142/s0218625x99001281

Bechstedt, F., Pulci, O., &; Schmidt, W. G. (1999). Theoretical Aspects of the Optical Response of Semiconductor Surfaces. Physica Status Solidi (A), 175(5), 5–16.https://doi.org/10.1002/(sici)1521-396x(199909)175:1&#60;5::aid-pssa5&#62;3.0.co;2-9 
LibreCat: /record/13766
DOI: 10.1002/(sici)1521-396x(199909)175:1<5::aid-pssa5>3.0.co;2-9

Esser, N., Schmidt, W. G., Bernholc, J., Frisch, A. M., Vogt, P., Zorn, M.,https://doi.org/10.1116/1.590810__Visbeck, S. (1999). GaP(001) and InP(001): Reflectance anisotropy and surface geometry. Journal of Vacuum Science &; Technology B: Microelectronics and Nanometer Structures, 17(4).https://doi.org/10.1116/1.590810 
LibreCat: /record/13767
DOI: 10.1116/1.590810

Frisch, A. M., Schmidt, W. G., Bernholc, J., Pristovsek, M., Esser, N., &; Richter, W. (1999). (2×4)GaP(001) surface: Atomic structure and optical anisotropy. Physical Review B, 60(4), 2488–2494.https://doi.org/10.1103/physrevb.60.2488 
LibreCat: /record/13768
DOI: 10.1103/physrevb.60.2488

Schmidt, W. G., Briggs, E. L., Bernholc, J., &; Bechstedt, F. (1999). Structural fingerprints in the reflectance anisotropy spectra ofInP(001)(2×4)surfaces. Physical Review B, 59(3), 2234–2239.https://doi.org/10.1103/physrevb.59.2234 
LibreCat: /record/13769
DOI: 10.1103/physrevb.59.2234

Shkrebtii, A. I., Esser, N., Richter, W., Schmidt, W. G., Bechstedt, F., Fimland, B. O.,https://doi.org/10.1103/physrevlett.81.721__Del Sole, R. (1998). Reflectance Anisotropy of GaAs(100): Theory and Experiment. Physical Review Letters, 81(3), 721–724.https://doi.org/10.1103/physrevlett.81.721 
LibreCat: /record/13771
DOI: 10.1103/physrevlett.81.721

Schmidt, W. G., &; Bechstedt, F. (1998). Geometry and electronic structure of InP(001)(2×4) reconstructions. Surface Science, 409(3), 474–484.https://doi.org/10.1016/s0039-6028(98)00260-x 
LibreCat: /record/13772
DOI: 10.1016/s0039-6028(98)00260-x

Schmidt, W. G., Bechstedt, F., Esser, N., Pristovsek, M., Schultz, C., &; Richter, W. (1998). Atomic structure of InP(001)-(2×4): A dimer reconstruction. Physical Review B, 57(23), 14596–14599.https://doi.org/10.1103/physrevb.57.14596 
LibreCat: /record/13773
DOI: 10.1103/physrevb.57.14596

Schmidt, W. G., Käckell, P., &; Bechstedt, F. (1998). In-induced (4 × 2) reconstructions of GaAs(001) surfaces. Applied Surface Science, 123–124, 136–140.https://doi.org/10.1016/s0169-4332(97)00510-2 
LibreCat: /record/13774
DOI: 10.1016/s0169-4332(97)00510-2

Nilen, R. W. N., Connell, S. H., Britton, D. T., Fischer, C. G., Sendezera, E. J., Schmidt, W. G.,https://doi.org/10.4028/www.scientific.net/msf.255-257.475__Verwoerd, W. S. (1997). A High Resolution Investigation of the Anisotropic Electron-Positron Momentum Distribution in Diamond. Materials Science Forum, 255–257, 475–478.https://doi.org/10.4028/www.scientific.net/msf.255-257.475 
LibreCat: /record/13859
DOI: 10.4028/www.scientific.net/msf.255-257.475

Schmidt, W. G. (1997). (4×2) and (2×4) reconstructions of GaAs and InP(001) surfaces. Applied Physics A: Materials Science &; Processing, 65, 581–586.https://doi.org/10.1007/s003390050625 
LibreCat: /record/13775
DOI: 10.1007/s003390050625

Nilen, R. W. N., Connell, S. H., Britton, D. T., Fischer, C. G., Sendezera, E. J., Schaaff, P.,https://doi.org/10.1088/0953-8984/9/29/017__Verwoerd, W. S. (1997). The anisotropic electron - positron momentum distribution in diamond. Journal of Physics: Condensed Matter, 9, 6323–6333.https://doi.org/10.1088/0953-8984/9/29/017 
LibreCat: /record/13776
DOI: 10.1088/0953-8984/9/29/017

Grossner, U., Schmidt, W. G., &; Bechstedt, F. (1997). As on InP(110) studied within density-functional theory. Physical Review B, 56(11), 6719–6726.https://doi.org/10.1103/physrevb.56.6719 
LibreCat: /record/13777
DOI: 10.1103/physrevb.56.6719

Großner, U., Schmidt, W. G., Bechstedt, F., Santos, P. V., Koopmans, B., &; Esser, N. (1997). Chemisorption of arsenic on InP(110). Surface Science, 377–379, 619–622.https://doi.org/10.1016/s0039-6028(96)01469-0 
LibreCat: /record/13778
DOI: 10.1016/s0039-6028(96)01469-0

Schmidt, W. G., &; Bechstedt, F. (1997). Comparison of As-rich and Sb-terminated GaAs(100)(2 × 4) reconstructions. Surface Science, 377–379, 11–14.https://doi.org/10.1016/s0039-6028(96)01318-0 
LibreCat: /record/13779
DOI: 10.1016/s0039-6028(96)01318-0

Schmidt, W. G., &; Bechstedt, F. (1997). Antimony-stabilized GaAs(001)(2×4) reconstructions. Physical Review B, 55(19), 13051–13057.https://doi.org/10.1103/physrevb.55.13051 
LibreCat: /record/13780
DOI: 10.1103/physrevb.55.13051

Nilen, R. W. N., Connell, S. H., Schmidt, W. G., Britton, D. T., Verwoerd, W. S., Sellschop, J. P. F., &; Shrivastava, S. (1997). Electron-positron momentum density distribution in diamond. Applied Surface Science, 116, 330–334.https://doi.org/10.1016/s0169-4332(96)01078-1 
LibreCat: /record/13781
DOI: 10.1016/s0169-4332(96)01078-1

Esser, N., Shkrebtii, A. I., Resch-Esser, U., Springer, C., Richter, W., Schmidt, W. G.,https://doi.org/10.1103/physrevlett.77.4402__Del Sole, R. (1996). Atomic Structure of the Sb-Stabilized GaAs(100)-(2×4) Surface. Physical Review Letters, 77(21), 4402–4405.https://doi.org/10.1103/physrevlett.77.4402 
LibreCat: /record/13782
DOI: 10.1103/physrevlett.77.4402

Schmidt, W. G., &; Bechstedt, F. (1996). Geometry and electronic structure of GaAs(001)(2×4) reconstructions. Physical Review B, 54(23), 16742–16748.https://doi.org/10.1103/physrevb.54.16742 
LibreCat: /record/13783
DOI: 10.1103/physrevb.54.16742

Santos, P. V., Koopmans, B., Esser, N., Schmidt, W. G., &; Bechstedt, F. (1996). Optical Properties of Ordered As Layers on InP(110) Surfaces. Physical Review Letters, 77(4), 759–762.https://doi.org/10.1103/physrevlett.77.759 
LibreCat: /record/13784
DOI: 10.1103/physrevlett.77.759

Schmidt, W. G., &; Bechstedt, F. (1996). Atomic structures of GaAs(100)-(2 × 4) reconstructions. Surface Science, 360(1), L473–L477.https://doi.org/10.1016/0039-6028(96)00728-5 
LibreCat: /record/13785
DOI: 10.1016/0039-6028(96)00728-5

Bechstedt, F., Schmidt, W. G., &; Scholze, A. (1996). Adatoms and vacancies on the diamond(111) surface. Europhysics Letters (EPL), 35(8), 585–590.https://doi.org/10.1209/epl/i1996-00155-0 
LibreCat: /record/13786
DOI: 10.1209/epl/i1996-00155-0

Schmidt, W. (1996). Adsorption of group-V elements on III–V (1 1 0) surfaces. Surface Science Reports, 25, 141–223.https://doi.org/10.1016/s0167-5729(96)00006-4 
LibreCat: /record/13787
DOI: 10.1016/s0167-5729(96)00006-4

Schmidt, W. G., &; Verwoerd, W. . (1996). Annihilation of delocalized positrons: a comparison of diamond and silicon. Physics Letters A, 222(4), 275–280.https://doi.org/10.1016/0375-9601(96)00653-6 
LibreCat: /record/13788
DOI: 10.1016/0375-9601(96)00653-6

Scholze, A., Schmidt, W. G., &; Bechstedt, F. (1996). Structure of the diamond (111) surface: Single-dangling-bond versus triple-dangling-bond face. Physical Review B, 53(20), 13725–13733.https://doi.org/10.1103/physrevb.53.13725 
LibreCat: /record/13789
DOI: 10.1103/physrevb.53.13725

Schmidt, W. G., Käckell, P., &; Bechstedt, F. (1996). 3d core-level shifts at. Surface Science, 357–358, 545–549.https://doi.org/10.1016/0039-6028(96)00220-8 
LibreCat: /record/13790
DOI: 10.1016/0039-6028(96)00220-8

Scholze, A., Schmidt, W. G., &; Bechstedt, F. (1996). Diamond (111) and (100) surface reconstructions. Thin Solid Films, 281–282, 256–259.https://doi.org/10.1016/0040-6090(96)08646-4 
LibreCat: /record/13791
DOI: 10.1016/0040-6090(96)08646-4

Schmidt, W. G., Bechstedt, F., &; Srivastava, G. P. (1996). Phonons at III–V (110) surfaces. Surface Science, 352–354, 83–88.https://doi.org/10.1016/0039-6028(95)01095-5 
LibreCat: /record/13792
DOI: 10.1016/0039-6028(95)01095-5

Schmidt, W. G., Scholze, A., &; Bechstedt, F. (1996). Dimerized, buckled, or ideal chains on the diamond (111)2 × 1 surface? Surface Science, 351, 183–188.https://doi.org/10.1016/0039-6028(95)01270-2 
LibreCat: /record/13793
DOI: 10.1016/0039-6028(95)01270-2

Käckell, P., Schmidt, W. G., &; Bechstedt, F. (1996). Se-induced 3d core-level shifts of GaAs(110). Applied Surface Science, 104–105, 141–146.https://doi.org/10.1016/s0169-4332(96)00135-3 
LibreCat: /record/13794
DOI: 10.1016/s0169-4332(96)00135-3

Scholze, A., Schmidt, W. G., Käckell, P., &; Bechstedt, F. (1996). Diamond (111) and (100) surface: ab initio study of the atomic and electronic structure. Materials Science and Engineering: B, 37(1–3), 158–161.https://doi.org/10.1016/0921-5107(95)01477-2 
LibreCat: /record/13795
DOI: 10.1016/0921-5107(95)01477-2

Santos, P. V., Esser, N., Groenen, J., Cardona, M., Schmidt, W. G., &; Bechstedt, F. (1995). Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces. Physical Review B, 52(24), 17379–17385.https://doi.org/10.1103/physrevb.52.17379 
LibreCat: /record/13796
DOI: 10.1103/physrevb.52.17379

Santos, P. V., Esser, N., Cardona, M., Schmidt, W. G., &; Bechstedt, F. (1995). Optical properties of Sb-terminated GaAs and InP (110) surfaces. Physical Review B, 52(16), 12158–12167.https://doi.org/10.1103/physrevb.52.12158 
LibreCat: /record/13797
DOI: 10.1103/physrevb.52.12158

Schmidt, W. G., Bechstedt, F., &; Srivastava, G. P. (1995). III-V(110) surface dynamics from anab initiofrozen-phonon approach. Physical Review B, 52(3), 2001–2007.https://doi.org/10.1103/physrevb.52.2001 
LibreCat: /record/13798
DOI: 10.1103/physrevb.52.2001

Schmidt, W. G., &; Bechstedt, F. (1995). Se/GaAs(110): energetics and structure. Surface Science, 331–333(Part A), 557–563.https://doi.org/10.1016/0039-6028(95)00317-7 
LibreCat: /record/13799
DOI: 10.1016/0039-6028(95)00317-7

Kress, C., Fiedler, M., Schmidt, W. G., &; Bechstedt, F. (1995). Quasi-particle band structure of C(111)2 × 1 and C(100)2 × 1 surfaces. Surface Science, 331–333, 1152–1156.https://doi.org/10.1016/0039-6028(95)00160-3 
LibreCat: /record/13800
DOI: 10.1016/0039-6028(95)00160-3

Schmidt, W. G., &; Srivastava, G. P. (1995). III-V(110)/Sb(1 ML): structural and dynamical properties. Surface Science, 331–333(Part A), 540–545.https://doi.org/10.1016/0039-6028(95)00304-5 
LibreCat: /record/13801
DOI: 10.1016/0039-6028(95)00304-5

Kress, C., Fiedler, M., Schmidt, W. G., &; Bechstedt, F. (1995). Geometrical and electronic structure of the reconstructed diamond (100) surface. Physical Review B, 50(23), 17697–17700.https://doi.org/10.1103/physrevb.50.17697 
LibreCat: /record/13850
DOI: 10.1103/physrevb.50.17697

Schmidt, W. G., &; Bechstedt, F. (1995). Exchange reactions versus adsorption geometries for Se/GaAs(110). Physical Review B, 50(23), 17651–17654.https://doi.org/10.1103/physrevb.50.17651 
LibreCat: /record/13851
DOI: 10.1103/physrevb.50.17651

Schmidt, W. G., &; Bechstedt, F. (1995). Se/GaAs(110): Atomic and electronic structure. Physical Review B, 50(23), 17280–17291.https://doi.org/10.1103/physrevb.50.17280 
LibreCat: /record/13852
DOI: 10.1103/physrevb.50.17280

Bechstedt, F., Schmidt, W. G., &; Wenzien, B. (1994). Energetics and Structure of Ordered Sb Overlayers and Sb Clusters on GaAs(110) Probed by Ab Initio Calculations. Europhysics Letters (EPL), 25(5), 357–362.https://doi.org/10.1209/0295-5075/25/5/008 
LibreCat: /record/13853
DOI: 10.1209/0295-5075/25/5/008

Schmidt, W. G., &; Srivastava, G. (1994). First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110). Solid State Communications, 89(4), 345–348.https://doi.org/10.1016/0038-1098(94)90597-5 
LibreCat: /record/13854
DOI: 10.1016/0038-1098(94)90597-5

Schmidt, W. G., Wenzien, B., &; Bechstedt, F. (1994). Coverage-dependent bonding of Sb on GaAs (110). Surface Science, 307–309(Part A), 235–240.https://doi.org/10.1016/0039-6028(94)90400-6 
LibreCat: /record/13855
DOI: 10.1016/0039-6028(94)90400-6

Schmidt, W. G., Wenzien, B., &; Bechstedt, F. (1994). Chemisorption of antimony on GaAs(110). Physical Review B, 49(7), 4731–4744.https://doi.org/10.1103/physrevb.49.4731 
LibreCat: /record/13856
DOI: 10.1103/physrevb.49.4731

Schmidt, W. G., &; Srivastava, G. P. (1993). Chemisorption of aluminium on GaAs(110). Journal of Physics: Condensed Matter, 5(49), 9025–9036.https://doi.org/10.1088/0953-8984/5/49/005 
LibreCat: /record/13857
DOI: 10.1088/0953-8984/5/49/005

Schmidt, W. G., Wenzien, B., &; Bechstedt, F. (1993). AB initio calculation of the atomic and electronic structure for Sb adsorbed on GaAs(110). Czechoslovak Journal of Physics, 43(9–10), 1003–1007.https://doi.org/10.1007/bf01595293 
LibreCat: /record/13858
DOI: 10.1007/bf01595293