F. Bechstedt, B. Adolph, and W. G. Schmidt, “Ab initio calculation of linear and nonlinear optical properties of semiconductor structures,” Brazilian Journal of Physics, vol. 29, no. 4, 1999.
LibreCat: /record/13764
DOI: 10.1590/s0103-97331999000400007

W. G. Schmidt, J. L. FATTEBERT, J. BERNHOLC, and F. BECHSTEDT, “SELF-ENERGY EFFECTS IN THE OPTICAL ANISOTROPY OF GaP(001),” Surface Review and Letters, vol. 6, no. 6, pp. 1159–1165, 1999.
LibreCat: /record/13765
DOI: 10.1142/s0218625x99001281

F. Bechstedt, O. Pulci, and W. G. Schmidt, “Theoretical Aspects of the Optical Response of Semiconductor Surfaces,” physica status solidi (a), vol. 175, no. 5, pp. 5–16, 1999.
LibreCat: /record/13766
DOI: 10.1002/(sici)1521-396x(199909)175:1<5::aid-pssa5>3.0.co;2-9

N. Esser et al., “GaP(001) and InP(001): Reflectance anisotropy and surface geometry,” Journal of Vacuum Science &; Technology B: Microelectronics and Nanometer Structures, vol. 17, no. 4, 1999.
LibreCat: /record/13767
DOI: 10.1116/1.590810

A. M. Frisch, W. G. Schmidt, J. Bernholc, M. Pristovsek, N. Esser, and W. Richter, “(2×4)GaP(001) surface: Atomic structure and optical anisotropy,” Physical Review B, vol. 60, no. 4, pp. 2488–2494, 1999.
LibreCat: /record/13768
DOI: 10.1103/physrevb.60.2488

W. G. Schmidt, E. L. Briggs, J. Bernholc, and F. Bechstedt, “Structural fingerprints in the reflectance anisotropy spectra ofInP(001)(2×4)surfaces,” Physical Review B, vol. 59, no. 3, pp. 2234–2239, 1999.
LibreCat: /record/13769
DOI: 10.1103/physrevb.59.2234

A. I. Shkrebtii et al., “Reflectance Anisotropy of GaAs(100): Theory and Experiment,” Physical Review Letters, vol. 81, no. 3, pp. 721–724, 1998.
LibreCat: /record/13771
DOI: 10.1103/physrevlett.81.721

W. G. Schmidt and F. Bechstedt, “Geometry and electronic structure of InP(001)(2×4) reconstructions,” Surface Science, vol. 409, no. 3, pp. 474–484, 1998.
LibreCat: /record/13772
DOI: 10.1016/s0039-6028(98)00260-x

W. G. Schmidt, F. Bechstedt, N. Esser, M. Pristovsek, C. Schultz, and W. Richter, “Atomic structure of InP(001)-(2×4): A dimer reconstruction,” Physical Review B, vol. 57, no. 23, pp. 14596–14599, 1998.
LibreCat: /record/13773
DOI: 10.1103/physrevb.57.14596

W. G. Schmidt, P. Käckell, and F. Bechstedt, “In-induced (4 × 2) reconstructions of GaAs(001) surfaces,” Applied Surface Science, vol. 123–124, pp. 136–140, 1998.
LibreCat: /record/13774
DOI: 10.1016/s0169-4332(97)00510-2

R. W. N. Nilen et al., “A High Resolution Investigation of the Anisotropic Electron-Positron Momentum Distribution in Diamond,” Materials Science Forum, vol. 255–257, pp. 475–478, 1997.
LibreCat: /record/13859
DOI: 10.4028/www.scientific.net/msf.255-257.475

W. G. Schmidt, “(4×2) and (2×4) reconstructions of GaAs and InP(001) surfaces,” Applied Physics A: Materials Science &; Processing, vol. 65, pp. 581–586, 1997.
LibreCat: /record/13775
DOI: 10.1007/s003390050625

R. W. N. Nilen et al., “The anisotropic electron - positron momentum distribution in diamond,” Journal of Physics: Condensed Matter, vol. 9, pp. 6323–6333, 1997.
LibreCat: /record/13776
DOI: 10.1088/0953-8984/9/29/017

U. Grossner, W. G. Schmidt, and F. Bechstedt, “As on InP(110) studied within density-functional theory,” Physical Review B, vol. 56, no. 11, pp. 6719–6726, 1997.
LibreCat: /record/13777
DOI: 10.1103/physrevb.56.6719

U. Großner, W. G. Schmidt, F. Bechstedt, P. V. Santos, B. Koopmans, and N. Esser, “Chemisorption of arsenic on InP(110),” Surface Science, vol. 377–379, pp. 619–622, 1997.
LibreCat: /record/13778
DOI: 10.1016/s0039-6028(96)01469-0

W. G. Schmidt and F. Bechstedt, “Comparison of As-rich and Sb-terminated GaAs(100)(2 × 4) reconstructions,” Surface Science, vol. 377–379, pp. 11–14, 1997.
LibreCat: /record/13779
DOI: 10.1016/s0039-6028(96)01318-0

W. G. Schmidt and F. Bechstedt, “Antimony-stabilized GaAs(001)(2×4) reconstructions,” Physical Review B, vol. 55, no. 19, pp. 13051–13057, 1997.
LibreCat: /record/13780
DOI: 10.1103/physrevb.55.13051

R. W. N. Nilen et al., “Electron-positron momentum density distribution in diamond,” Applied Surface Science, vol. 116, pp. 330–334, 1997.
LibreCat: /record/13781
DOI: 10.1016/s0169-4332(96)01078-1

N. Esser et al., “Atomic Structure of the Sb-Stabilized GaAs(100)-(2×4) Surface,” Physical Review Letters, vol. 77, no. 21, pp. 4402–4405, 1996.
LibreCat: /record/13782
DOI: 10.1103/physrevlett.77.4402

W. G. Schmidt and F. Bechstedt, “Geometry and electronic structure of GaAs(001)(2×4) reconstructions,” Physical Review B, vol. 54, no. 23, pp. 16742–16748, 1996.
LibreCat: /record/13783
DOI: 10.1103/physrevb.54.16742

P. V. Santos, B. Koopmans, N. Esser, W. G. Schmidt, and F. Bechstedt, “Optical Properties of Ordered As Layers on InP(110) Surfaces,” Physical Review Letters, vol. 77, no. 4, pp. 759–762, 1996.
LibreCat: /record/13784
DOI: 10.1103/physrevlett.77.759

W. G. Schmidt and F. Bechstedt, “Atomic structures of GaAs(100)-(2 × 4) reconstructions,” Surface Science, vol. 360, no. 1, pp. L473–L477, 1996.
LibreCat: /record/13785
DOI: 10.1016/0039-6028(96)00728-5

F. Bechstedt, W. G. Schmidt, and A. Scholze, “Adatoms and vacancies on the diamond(111) surface,” Europhysics Letters (EPL), vol. 35, no. 8, pp. 585–590, 1996.
LibreCat: /record/13786
DOI: 10.1209/epl/i1996-00155-0

W. Schmidt, “Adsorption of group-V elements on III–V (1 1 0) surfaces,” Surface Science Reports, vol. 25, pp. 141–223, 1996.
LibreCat: /record/13787
DOI: 10.1016/s0167-5729(96)00006-4

W. G. Schmidt and W. . Verwoerd, “Annihilation of delocalized positrons: a comparison of diamond and silicon,” Physics Letters A, vol. 222, no. 4, pp. 275–280, 1996.
LibreCat: /record/13788
DOI: 10.1016/0375-9601(96)00653-6

A. Scholze, W. G. Schmidt, and F. Bechstedt, “Structure of the diamond (111) surface: Single-dangling-bond versus triple-dangling-bond face,” Physical Review B, vol. 53, no. 20, pp. 13725–13733, 1996.
LibreCat: /record/13789
DOI: 10.1103/physrevb.53.13725

W. G. Schmidt, P. Käckell, and F. Bechstedt, “d core-level shifts at,” Surface Science, vol. 357–358, pp. 545–549, 1996.
LibreCat: /record/13790
DOI: 10.1016/0039-6028(96)00220-8

A. Scholze, W. G. Schmidt, and F. Bechstedt, “Diamond (111) and (100) surface reconstructions,” Thin Solid Films, vol. 281–282, pp. 256–259, 1996.
LibreCat: /record/13791
DOI: 10.1016/0040-6090(96)08646-4

W. G. Schmidt, F. Bechstedt, and G. P. Srivastava, “Phonons at III–V (110) surfaces,” Surface Science, vol. 352–354, pp. 83–88, 1996.
LibreCat: /record/13792
DOI: 10.1016/0039-6028(95)01095-5

W. G. Schmidt, A. Scholze, and F. Bechstedt, “Dimerized, buckled, or ideal chains on the diamond (111)2 × 1 surface?,” Surface Science, vol. 351, pp. 183–188, 1996.
LibreCat: /record/13793
DOI: 10.1016/0039-6028(95)01270-2

P. Käckell, W. G. Schmidt, and F. Bechstedt, “Se-induced 3d core-level shifts of GaAs(110),” Applied Surface Science, vol. 104–105, pp. 141–146, 1996.
LibreCat: /record/13794
DOI: 10.1016/s0169-4332(96)00135-3

A. Scholze, W. G. Schmidt, P. Käckell, and F. Bechstedt, “Diamond (111) and (100) surface: ab initio study of the atomic and electronic structure,” Materials Science and Engineering: B, vol. 37, no. 1–3, pp. 158–161, 1996.
LibreCat: /record/13795
DOI: 10.1016/0921-5107(95)01477-2

P. V. Santos, N. Esser, J. Groenen, M. Cardona, W. G. Schmidt, and F. Bechstedt, “Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces,” Physical Review B, vol. 52, no. 24, pp. 17379–17385, 1995.
LibreCat: /record/13796
DOI: 10.1103/physrevb.52.17379

P. V. Santos, N. Esser, M. Cardona, W. G. Schmidt, and F. Bechstedt, “Optical properties of Sb-terminated GaAs and InP (110) surfaces,” Physical Review B, vol. 52, no. 16, pp. 12158–12167, 1995.
LibreCat: /record/13797
DOI: 10.1103/physrevb.52.12158

W. G. Schmidt, F. Bechstedt, and G. P. Srivastava, “III-V(110) surface dynamics from anab initiofrozen-phonon approach,” Physical Review B, vol. 52, no. 3, pp. 2001–2007, 1995.
LibreCat: /record/13798
DOI: 10.1103/physrevb.52.2001

W. G. Schmidt and F. Bechstedt, “Se/GaAs(110): energetics and structure,” Surface Science, vol. 331–333, no. Part A, pp. 557–563, 1995.
LibreCat: /record/13799
DOI: 10.1016/0039-6028(95)00317-7

C. Kress, M. Fiedler, W. G. Schmidt, and F. Bechstedt, “Quasi-particle band structure of C(111)2 × 1 and C(100)2 × 1 surfaces,” Surface Science, vol. 331–333, pp. 1152–1156, 1995.
LibreCat: /record/13800
DOI: 10.1016/0039-6028(95)00160-3

W. G. Schmidt and G. P. Srivastava, “III-V(110)/Sb(1 ML): structural and dynamical properties,” Surface Science, vol. 331–333, no. Part A, pp. 540–545, 1995.
LibreCat: /record/13801
DOI: 10.1016/0039-6028(95)00304-5

C. Kress, M. Fiedler, W. G. Schmidt, and F. Bechstedt, “Geometrical and electronic structure of the reconstructed diamond (100) surface,” Physical Review B, vol. 50, no. 23, pp. 17697–17700, 1995.
LibreCat: /record/13850
DOI: 10.1103/physrevb.50.17697

W. G. Schmidt and F. Bechstedt, “Exchange reactions versus adsorption geometries for Se/GaAs(110),” Physical Review B, vol. 50, no. 23, pp. 17651–17654, 1995.
LibreCat: /record/13851
DOI: 10.1103/physrevb.50.17651

W. G. Schmidt and F. Bechstedt, “Se/GaAs(110): Atomic and electronic structure,” Physical Review B, vol. 50, no. 23, pp. 17280–17291, 1995.
LibreCat: /record/13852
DOI: 10.1103/physrevb.50.17280

F. Bechstedt, W. G. Schmidt, and B. Wenzien, “Energetics and Structure of Ordered Sb Overlayers and Sb Clusters on GaAs(110) Probed by Ab Initio Calculations,” Europhysics Letters (EPL), vol. 25, no. 5, pp. 357–362, 1994.
LibreCat: /record/13853
DOI: 10.1209/0295-5075/25/5/008

W. G. Schmidt and G. Srivastava, “First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110),” Solid State Communications, vol. 89, no. 4, pp. 345–348, 1994.
LibreCat: /record/13854
DOI: 10.1016/0038-1098(94)90597-5

W. G. Schmidt, B. Wenzien, and F. Bechstedt, “Coverage-dependent bonding of Sb on GaAs (110),” Surface Science, vol. 307–309, no. Part A, pp. 235–240, 1994.
LibreCat: /record/13855
DOI: 10.1016/0039-6028(94)90400-6

W. G. Schmidt, B. Wenzien, and F. Bechstedt, “Chemisorption of antimony on GaAs(110),” Physical Review B, vol. 49, no. 7, pp. 4731–4744, 1994.
LibreCat: /record/13856
DOI: 10.1103/physrevb.49.4731

W. G. Schmidt and G. P. Srivastava, “Chemisorption of aluminium on GaAs(110),” Journal of Physics: Condensed Matter, vol. 5, no. 49, pp. 9025–9036, 1993.
LibreCat: /record/13857
DOI: 10.1088/0953-8984/5/49/005

W. G. Schmidt, B. Wenzien, and F. Bechstedt, “AB initio calculation of the atomic and electronic structure for Sb adsorbed on GaAs(110),” Czechoslovak Journal of Physics, vol. 43, no. 9–10, pp. 1003–1007, 1993.
LibreCat: /record/13858
DOI: 10.1007/bf01595293