Bechstedt F, Adolph B, Schmidt WG. Ab initio calculation of linear and nonlinear optical properties of semiconductor structures. Brazilian Journal of Physics. 1999;29(4). doi:10.1590/s0103-97331999000400007

Schmidt WG, FATTEBERT JL, BERNHOLC J, BECHSTEDT F. SELF-ENERGY EFFECTS IN THE OPTICAL ANISOTROPY OF GaP(001). Surface Review and Letters. 1999;6(6):1159-1165. doi:10.1142/s0218625x99001281

Bechstedt F, Pulci O, Schmidt WG. Theoretical Aspects of the Optical Response of Semiconductor Surfaces. physica status solidi (a). 1999;175(5):5-16. doi:10.1002/(sici)1521-396x(199909)175:1&#60;5::aid-pssa5&#62;3.0.co;2-9

Esser N, Schmidt WG, Bernholc J, et al. GaP(001) and InP(001): Reflectance anisotropy and surface geometry. Journal of Vacuum Science &; Technology B: Microelectronics and Nanometer Structures. 1999;17(4). doi:10.1116/1.590810

Frisch AM, Schmidt WG, Bernholc J, Pristovsek M, Esser N, Richter W. (2×4)GaP(001) surface: Atomic structure and optical anisotropy. Physical Review B. 1999;60(4):2488-2494. doi:10.1103/physrevb.60.2488

Schmidt WG, Briggs EL, Bernholc J, Bechstedt F. Structural fingerprints in the reflectance anisotropy spectra ofInP(001)(2×4)surfaces. Physical Review B. 1999;59(3):2234-2239. doi:10.1103/physrevb.59.2234

Shkrebtii AI, Esser N, Richter W, et al. Reflectance Anisotropy of GaAs(100): Theory and Experiment. Physical Review Letters. 1998;81(3):721-724. doi:10.1103/physrevlett.81.721

Schmidt WG, Bechstedt F. Geometry and electronic structure of InP(001)(2×4) reconstructions. Surface Science. 1998;409(3):474-484. doi:10.1016/s0039-6028(98)00260-x

Schmidt WG, Bechstedt F, Esser N, Pristovsek M, Schultz C, Richter W. Atomic structure of InP(001)-(2×4): A dimer reconstruction. Physical Review B. 1998;57(23):14596-14599. doi:10.1103/physrevb.57.14596

Schmidt WG, Käckell P, Bechstedt F. In-induced (4 × 2) reconstructions of GaAs(001) surfaces. Applied Surface Science. 1998;123-124:136-140. doi:10.1016/s0169-4332(97)00510-2

Nilen RWN, Connell SH, Britton DT, et al. A High Resolution Investigation of the Anisotropic Electron-Positron Momentum Distribution in Diamond. Materials Science Forum. 1997;255-257:475-478. doi:10.4028/www.scientific.net/msf.255-257.475

Schmidt WG. (4×2) and (2×4) reconstructions of GaAs and InP(001) surfaces. Applied Physics A: Materials Science &; Processing. 1997;65:581-586. doi:10.1007/s003390050625

Nilen RWN, Connell SH, Britton DT, et al. The anisotropic electron - positron momentum distribution in diamond. Journal of Physics: Condensed Matter. 1997;9:6323-6333. doi:10.1088/0953-8984/9/29/017

Grossner U, Schmidt WG, Bechstedt F. As on InP(110) studied within density-functional theory. Physical Review B. 1997;56(11):6719-6726. doi:10.1103/physrevb.56.6719

Großner U, Schmidt WG, Bechstedt F, Santos PV, Koopmans B, Esser N. Chemisorption of arsenic on InP(110). Surface Science. 1997;377-379:619-622. doi:10.1016/s0039-6028(96)01469-0

Schmidt WG, Bechstedt F. Comparison of As-rich and Sb-terminated GaAs(100)(2 × 4) reconstructions. Surface Science. 1997;377-379:11-14. doi:10.1016/s0039-6028(96)01318-0

Schmidt WG, Bechstedt F. Antimony-stabilized GaAs(001)(2×4) reconstructions. Physical Review B. 1997;55(19):13051-13057. doi:10.1103/physrevb.55.13051

Nilen RWN, Connell SH, Schmidt WG, et al. Electron-positron momentum density distribution in diamond. Applied Surface Science. 1997;116:330-334. doi:10.1016/s0169-4332(96)01078-1

Esser N, Shkrebtii AI, Resch-Esser U, et al. Atomic Structure of the Sb-Stabilized GaAs(100)-(2×4) Surface. Physical Review Letters. 1996;77(21):4402-4405. doi:10.1103/physrevlett.77.4402

Schmidt WG, Bechstedt F. Geometry and electronic structure of GaAs(001)(2×4) reconstructions. Physical Review B. 1996;54(23):16742-16748. doi:10.1103/physrevb.54.16742

Santos PV, Koopmans B, Esser N, Schmidt WG, Bechstedt F. Optical Properties of Ordered As Layers on InP(110) Surfaces. Physical Review Letters. 1996;77(4):759-762. doi:10.1103/physrevlett.77.759

Schmidt WG, Bechstedt F. Atomic structures of GaAs(100)-(2 × 4) reconstructions. Surface Science. 1996;360(1):L473-L477. doi:10.1016/0039-6028(96)00728-5

Bechstedt F, Schmidt WG, Scholze A. Adatoms and vacancies on the diamond(111) surface. Europhysics Letters (EPL). 1996;35(8):585-590. doi:10.1209/epl/i1996-00155-0

Schmidt W. Adsorption of group-V elements on III–V (1 1 0) surfaces. Surface Science Reports. 1996;25:141-223. doi:10.1016/s0167-5729(96)00006-4

Schmidt WG, Verwoerd W. Annihilation of delocalized positrons: a comparison of diamond and silicon. Physics Letters A. 1996;222(4):275-280. doi:10.1016/0375-9601(96)00653-6

Scholze A, Schmidt WG, Bechstedt F. Structure of the diamond (111) surface: Single-dangling-bond versus triple-dangling-bond face. Physical Review B. 1996;53(20):13725-13733. doi:10.1103/physrevb.53.13725

Schmidt WG, Käckell P, Bechstedt F. 3d core-level shifts at. Surface Science. 1996;357-358:545-549. doi:10.1016/0039-6028(96)00220-8

Scholze A, Schmidt WG, Bechstedt F. Diamond (111) and (100) surface reconstructions. Thin Solid Films. 1996;281-282:256-259. doi:10.1016/0040-6090(96)08646-4

Schmidt WG, Bechstedt F, Srivastava GP. Phonons at III–V (110) surfaces. Surface Science. 1996;352-354:83-88. doi:10.1016/0039-6028(95)01095-5

Schmidt WG, Scholze A, Bechstedt F. Dimerized, buckled, or ideal chains on the diamond (111)2 × 1 surface? Surface Science. 1996;351:183-188. doi:10.1016/0039-6028(95)01270-2

Käckell P, Schmidt WG, Bechstedt F. Se-induced 3d core-level shifts of GaAs(110). Applied Surface Science. 1996;104-105:141-146. doi:10.1016/s0169-4332(96)00135-3

Scholze A, Schmidt WG, Käckell P, Bechstedt F. Diamond (111) and (100) surface: ab initio study of the atomic and electronic structure. Materials Science and Engineering: B. 1996;37(1-3):158-161. doi:10.1016/0921-5107(95)01477-2

Santos PV, Esser N, Groenen J, Cardona M, Schmidt WG, Bechstedt F. Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces. Physical Review B. 1995;52(24):17379-17385. doi:10.1103/physrevb.52.17379

Santos PV, Esser N, Cardona M, Schmidt WG, Bechstedt F. Optical properties of Sb-terminated GaAs and InP (110) surfaces. Physical Review B. 1995;52(16):12158-12167. doi:10.1103/physrevb.52.12158

Schmidt WG, Bechstedt F, Srivastava GP. III-V(110) surface dynamics from anab initiofrozen-phonon approach. Physical Review B. 1995;52(3):2001-2007. doi:10.1103/physrevb.52.2001

Schmidt WG, Bechstedt F. Se/GaAs(110): energetics and structure. Surface Science. 1995;331-333(Part A):557-563. doi:10.1016/0039-6028(95)00317-7

Kress C, Fiedler M, Schmidt WG, Bechstedt F. Quasi-particle band structure of C(111)2 × 1 and C(100)2 × 1 surfaces. Surface Science. 1995;331-333:1152-1156. doi:10.1016/0039-6028(95)00160-3

Schmidt WG, Srivastava GP. III-V(110)/Sb(1 ML): structural and dynamical properties. Surface Science. 1995;331-333(Part A):540-545. doi:10.1016/0039-6028(95)00304-5

Kress C, Fiedler M, Schmidt WG, Bechstedt F. Geometrical and electronic structure of the reconstructed diamond (100) surface. Physical Review B. 1995;50(23):17697-17700. doi:10.1103/physrevb.50.17697

Schmidt WG, Bechstedt F. Exchange reactions versus adsorption geometries for Se/GaAs(110). Physical Review B. 1995;50(23):17651-17654. doi:10.1103/physrevb.50.17651

Schmidt WG, Bechstedt F. Se/GaAs(110): Atomic and electronic structure. Physical Review B. 1995;50(23):17280-17291. doi:10.1103/physrevb.50.17280

Bechstedt F, Schmidt WG, Wenzien B. Energetics and Structure of Ordered Sb Overlayers and Sb Clusters on GaAs(110) Probed by Ab Initio Calculations. Europhysics Letters (EPL). 1994;25(5):357-362. doi:10.1209/0295-5075/25/5/008

Schmidt WG, Srivastava G. First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110). Solid State Communications. 1994;89(4):345-348. doi:10.1016/0038-1098(94)90597-5

Schmidt WG, Wenzien B, Bechstedt F. Coverage-dependent bonding of Sb on GaAs (110). Surface Science. 1994;307-309(Part A):235-240. doi:10.1016/0039-6028(94)90400-6

Schmidt WG, Wenzien B, Bechstedt F. Chemisorption of antimony on GaAs(110). Physical Review B. 1994;49(7):4731-4744. doi:10.1103/physrevb.49.4731

Schmidt WG, Srivastava GP. Chemisorption of aluminium on GaAs(110). Journal of Physics: Condensed Matter. 1993;5(49):9025-9036. doi:10.1088/0953-8984/5/49/005

Schmidt WG, Wenzien B, Bechstedt F. AB initio calculation of the atomic and electronic structure for Sb adsorbed on GaAs(110). Czechoslovak Journal of Physics. 1993;43(9-10):1003-1007. doi:10.1007/bf01595293