On the origin of resonance features in reflectance difference data of silicon
K. Hingerl, R.. Balderas-Navarro, A. Bonanni, P. Tichopadek, W.G. Schmidt, Applied Surface Science 175–176 (2001) 769–776.
LibreCat: /record/13847
DOI: 10.1016/s0169-4332(01)00114-3

Terrace and step contributions to the optical anisotropy of Si(001) surfaces
W.G. Schmidt, F. Bechstedt, J. Bernholc, Physical Review B 63 (2001).
LibreCat: /record/13849
DOI: 10.1103/physrevb.63.045322

First-principles study of (2×1) and (2×2) phosphorus-rich InP(001) surfaces
O. Pulci, K. Lüdge, W.G. Schmidt, F. Bechstedt, Surface Science 464 (2000) 272–282.
LibreCat: /record/13756
DOI: 10.1016/s0039-6028(00)00729-9

(001) Surfaces of GaP and InP: structural motifs, electronic states and optical signatures
W.G. Schmidt, J. Bernholc, F. Bechstedt, Applied Surface Science 166 (2000) 179–184.
LibreCat: /record/13757
DOI: 10.1016/s0169-4332(00)00406-2

Angle Resolved Photoemission Spectroscopy of the InP(001) surface
A.M. Frisch, P. Vogt, S. Visbeck, T. Hannappel, F. Willig, W. Braun, W. Richter, J. Bernholc, W.G. Schmidt, N. Esser, Applied Surface Science 166 (2000) 224–230.
LibreCat: /record/13758
DOI: 10.1016/s0169-4332(00)00431-1

Surface phase diagram of (2×4) and (4×2) reconstructions of GaAs(001)
W.G. Schmidt, S. Mirbt, F. Bechstedt, Physical Review B 62 (2000) 8087–8091.
LibreCat: /record/13759
DOI: 10.1103/physrevb.62.8087

Understanding reflectance anisotropy: Surface-state signatures and bulk-related features in the optical spectrum ofInP(001)(2×4)
W.G. Schmidt, N. Esser, A.M. Frisch, P. Vogt, J. Bernholc, F. Bechstedt, M. Zorn, T. Hannappel, S. Visbeck, F. Willig, W. Richter, Physical Review B 61 (2000) 335–338.
LibreCat: /record/13760
DOI: 10.1103/physrevb.61.r16335

Understanding reflectance anisotropy: Surface-state signatures and bulk-related features
W.G. Schmidt, F. Bechstedt, J. Bernholc, Journal of Vacuum Science &; Technology B: Microelectronics and Nanometer Structures 18 (2000).
LibreCat: /record/13761
DOI: 10.1116/1.1305289

Step-induced optical anisotropy of Si(111):H surfaces
W.G. Schmidt, J. Bernholc, Physical Review B 61 (2000) 7604–7608.
LibreCat: /record/13762
DOI: 10.1103/physrevb.61.7604

Large-Scale Applications of Real-Space Multigrid Methods to Surfaces, Nanotubes and Quantum Transport
J. Bernholc, E.L. Briggs, C. Bungaro, M. Buongiorno Nardelli, J.-L. Fattebert, K. Rapcewicz, C. Roland, W.G. Schmidt, Q. Zhao, in: Computer Simulation of Materials at Atomic Level, physica status solidi (b), 2000, pp. 685–701.
LibreCat: /record/13763
DOI: 10.1002/3527603107.ch33

Ab initio calculation of linear and nonlinear optical properties of semiconductor structures
F. Bechstedt, B. Adolph, W.G. Schmidt, Brazilian Journal of Physics 29 (1999).
LibreCat: /record/13764
DOI: 10.1590/s0103-97331999000400007

SELF-ENERGY EFFECTS IN THE OPTICAL ANISOTROPY OF GaP(001)
W.G. Schmidt, J.L. FATTEBERT, J. BERNHOLC, F. BECHSTEDT, Surface Review and Letters 6 (1999) 1159–1165.
LibreCat: /record/13765
DOI: 10.1142/s0218625x99001281

Theoretical Aspects of the Optical Response of Semiconductor Surfaces
F. Bechstedt, O. Pulci, W.G. Schmidt, Physica Status Solidi (A) 175 (1999) 5–16.
LibreCat: /record/13766
DOI: 10.1002/(sici)1521-396x(199909)175:1<5::aid-pssa5>3.0.co;2-9

GaP(001) and InP(001): Reflectance anisotropy and surface geometry
N. Esser, W.G. Schmidt, J. Bernholc, A.M. Frisch, P. Vogt, M. Zorn, M. Pristovsek, W. Richter, F. Bechstedt, T. Hannappel, S. Visbeck, Journal of Vacuum Science &; Technology B: Microelectronics and Nanometer Structures 17 (1999).
LibreCat: /record/13767
DOI: 10.1116/1.590810

(2×4)GaP(001) surface: Atomic structure and optical anisotropy
A.M. Frisch, W.G. Schmidt, J. Bernholc, M. Pristovsek, N. Esser, W. Richter, Physical Review B 60 (1999) 2488–2494.
LibreCat: /record/13768
DOI: 10.1103/physrevb.60.2488

Structural fingerprints in the reflectance anisotropy spectra ofInP(001)(2×4)surfaces
W.G. Schmidt, E.L. Briggs, J. Bernholc, F. Bechstedt, Physical Review B 59 (1999) 2234–2239.
LibreCat: /record/13769
DOI: 10.1103/physrevb.59.2234

Reflectance Anisotropy of GaAs(100): Theory and Experiment
A.I. Shkrebtii, N. Esser, W. Richter, W.G. Schmidt, F. Bechstedt, B.O. Fimland, A. Kley, R. Del Sole, Physical Review Letters 81 (1998) 721–724.
LibreCat: /record/13771
DOI: 10.1103/physrevlett.81.721

Geometry and electronic structure of InP(001)(2×4) reconstructions
W.G. Schmidt, F. Bechstedt, Surface Science 409 (1998) 474–484.
LibreCat: /record/13772
DOI: 10.1016/s0039-6028(98)00260-x

Atomic structure of InP(001)-(2×4): A dimer reconstruction
W.G. Schmidt, F. Bechstedt, N. Esser, M. Pristovsek, C. Schultz, W. Richter, Physical Review B 57 (1998) 14596–14599.
LibreCat: /record/13773
DOI: 10.1103/physrevb.57.14596

In-induced (4 × 2) reconstructions of GaAs(001) surfaces
W.G. Schmidt, P. Käckell, F. Bechstedt, Applied Surface Science 123–124 (1998) 136–140.
LibreCat: /record/13774
DOI: 10.1016/s0169-4332(97)00510-2