P. Käckell, W. G. Schmidt, and F. Bechstedt, “Se-induced 3d core-level shifts of GaAs(110),” Applied Surface Science, vol. 104–105, pp. 141–146, 1996.
LibreCat: /record/13794
DOI: 10.1016/s0169-4332(96)00135-3

A. Scholze, W. G. Schmidt, P. Käckell, and F. Bechstedt, “Diamond (111) and (100) surface: ab initio study of the atomic and electronic structure,” Materials Science and Engineering: B, vol. 37, no. 1–3, pp. 158–161, 1996.
LibreCat: /record/13795
DOI: 10.1016/0921-5107(95)01477-2

P. V. Santos, N. Esser, J. Groenen, M. Cardona, W. G. Schmidt, and F. Bechstedt, “Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces,” Physical Review B, vol. 52, no. 24, pp. 17379–17385, 1995.
LibreCat: /record/13796
DOI: 10.1103/physrevb.52.17379

P. V. Santos, N. Esser, M. Cardona, W. G. Schmidt, and F. Bechstedt, “Optical properties of Sb-terminated GaAs and InP (110) surfaces,” Physical Review B, vol. 52, no. 16, pp. 12158–12167, 1995.
LibreCat: /record/13797
DOI: 10.1103/physrevb.52.12158

W. G. Schmidt, F. Bechstedt, and G. P. Srivastava, “III-V(110) surface dynamics from anab initiofrozen-phonon approach,” Physical Review B, vol. 52, no. 3, pp. 2001–2007, 1995.
LibreCat: /record/13798
DOI: 10.1103/physrevb.52.2001

W. G. Schmidt and F. Bechstedt, “Se/GaAs(110): energetics and structure,” Surface Science, vol. 331–333, no. Part A, pp. 557–563, 1995.
LibreCat: /record/13799
DOI: 10.1016/0039-6028(95)00317-7

C. Kress, M. Fiedler, W. G. Schmidt, and F. Bechstedt, “Quasi-particle band structure of C(111)2 × 1 and C(100)2 × 1 surfaces,” Surface Science, vol. 331–333, pp. 1152–1156, 1995.
LibreCat: /record/13800
DOI: 10.1016/0039-6028(95)00160-3

W. G. Schmidt and G. P. Srivastava, “III-V(110)/Sb(1 ML): structural and dynamical properties,” Surface Science, vol. 331–333, no. Part A, pp. 540–545, 1995.
LibreCat: /record/13801
DOI: 10.1016/0039-6028(95)00304-5

C. Kress, M. Fiedler, W. G. Schmidt, and F. Bechstedt, “Geometrical and electronic structure of the reconstructed diamond (100) surface,” Physical Review B, vol. 50, no. 23, pp. 17697–17700, 1995.
LibreCat: /record/13850
DOI: 10.1103/physrevb.50.17697

W. G. Schmidt and F. Bechstedt, “Exchange reactions versus adsorption geometries for Se/GaAs(110),” Physical Review B, vol. 50, no. 23, pp. 17651–17654, 1995.
LibreCat: /record/13851
DOI: 10.1103/physrevb.50.17651

W. G. Schmidt and F. Bechstedt, “Se/GaAs(110): Atomic and electronic structure,” Physical Review B, vol. 50, no. 23, pp. 17280–17291, 1995.
LibreCat: /record/13852
DOI: 10.1103/physrevb.50.17280

F. Bechstedt, W. G. Schmidt, and B. Wenzien, “Energetics and Structure of Ordered Sb Overlayers and Sb Clusters on GaAs(110) Probed by Ab Initio Calculations,” Europhysics Letters (EPL), vol. 25, no. 5, pp. 357–362, 1994.
LibreCat: /record/13853
DOI: 10.1209/0295-5075/25/5/008

W. G. Schmidt and G. Srivastava, “First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110),” Solid State Communications, vol. 89, no. 4, pp. 345–348, 1994.
LibreCat: /record/13854
DOI: 10.1016/0038-1098(94)90597-5

W. G. Schmidt, B. Wenzien, and F. Bechstedt, “Coverage-dependent bonding of Sb on GaAs (110),” Surface Science, vol. 307–309, no. Part A, pp. 235–240, 1994.
LibreCat: /record/13855
DOI: 10.1016/0039-6028(94)90400-6

W. G. Schmidt, B. Wenzien, and F. Bechstedt, “Chemisorption of antimony on GaAs(110),” Physical Review B, vol. 49, no. 7, pp. 4731–4744, 1994.
LibreCat: /record/13856
DOI: 10.1103/physrevb.49.4731

W. G. Schmidt and G. P. Srivastava, “Chemisorption of aluminium on GaAs(110),” Journal of Physics: Condensed Matter, vol. 5, no. 49, pp. 9025–9036, 1993.
LibreCat: /record/13857
DOI: 10.1088/0953-8984/5/49/005

W. G. Schmidt, B. Wenzien, and F. Bechstedt, “AB initio calculation of the atomic and electronic structure for Sb adsorbed on GaAs(110),” Czechoslovak Journal of Physics, vol. 43, no. 9–10, pp. 1003–1007, 1993.
LibreCat: /record/13858
DOI: 10.1007/bf01595293