W. G. Schmidt and F. Bechstedt, “Se/GaAs(110): Atomic and electronic structure,” Physical Review B, vol. 50, no. 23, pp. 17280–17291, 1995.
LibreCat: /record/13852
DOI: 10.1103/physrevb.50.17280

F. Bechstedt, W. G. Schmidt, and B. Wenzien, “Energetics and Structure of Ordered Sb Overlayers and Sb Clusters on GaAs(110) Probed by Ab Initio Calculations,” Europhysics Letters (EPL), vol. 25, no. 5, pp. 357–362, 1994.
LibreCat: /record/13853
DOI: 10.1209/0295-5075/25/5/008

W. G. Schmidt and G. Srivastava, “First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110),” Solid State Communications, vol. 89, no. 4, pp. 345–348, 1994.
LibreCat: /record/13854
DOI: 10.1016/0038-1098(94)90597-5

W. G. Schmidt, B. Wenzien, and F. Bechstedt, “Coverage-dependent bonding of Sb on GaAs (110),” Surface Science, vol. 307–309, no. Part A, pp. 235–240, 1994.
LibreCat: /record/13855
DOI: 10.1016/0039-6028(94)90400-6

W. G. Schmidt, B. Wenzien, and F. Bechstedt, “Chemisorption of antimony on GaAs(110),” Physical Review B, vol. 49, no. 7, pp. 4731–4744, 1994.
LibreCat: /record/13856
DOI: 10.1103/physrevb.49.4731

W. G. Schmidt and G. P. Srivastava, “Chemisorption of aluminium on GaAs(110),” Journal of Physics: Condensed Matter, vol. 5, no. 49, pp. 9025–9036, 1993.
LibreCat: /record/13857
DOI: 10.1088/0953-8984/5/49/005

W. G. Schmidt, B. Wenzien, and F. Bechstedt, “AB initio calculation of the atomic and electronic structure for Sb adsorbed on GaAs(110),” Czechoslovak Journal of Physics, vol. 43, no. 9–10, pp. 1003–1007, 1993.
LibreCat: /record/13858
DOI: 10.1007/bf01595293