Schmidt WG, Bechstedt F, Fleischer K, et al. GaAs(001): Surface Structure and Optical Properties. physica status solidi (a). 2002;188(4):1401-1409. doi:10.1002/1521-396x(200112)188:4&#60;1401::aid-pssa1401&#62;3.0.co;2-1

Bechstedt F, Schmidt WG, Hahn PH. Towards a Complete Many-Body Description: Optical Response of Real Surfaces. physica status solidi (a). 2002;188(4):1383-1392. doi:10.1002/1521-396x(200112)188:4&#60;1383::aid-pssa1383&#62;3.0.co;2-g

Onida G, Schmidt WG, Pulci O, et al. Theory for Modeling the Optical Properties of Surfaces. physica status solidi (a). 2002;188(4):1233-1242. doi:10.1002/1521-396x(200112)188:4&#60;1233::aid-pssa1233&#62;3.0.co;2-w

Paget D, Garreau Y, Sauvage M, Chiaradia P, Pinchaux R, Schmidt WG. X-ray diffraction analysis of the gallium-rich surface of GaAs(001). Physical Review B. 2002;64:161305(R). doi:10.1103/physrevb.64.161305

Pulci O, Lüdge K, Vogt P, et al. First-principles study of InP and GaP(001) surfaces. Computational Materials Science. 2002:32-37. doi:10.1016/s0927-0256(01)00161-6

Hingerl K, Balderas-Navarro R., Bonanni A, Tichopadek P, Schmidt W. On the origin of resonance features in reflectance difference data of silicon. Applied Surface Science. 2002;175-176:769-776. doi:10.1016/s0169-4332(01)00114-3

Schmidt WG, Bechstedt F, Bernholc J. Terrace and step contributions to the optical anisotropy of Si(001) surfaces. Physical Review B. 2002;63:045322. doi:10.1103/physrevb.63.045322

Lu W, Schmidt WG, Briggs EL, Bernholc J. Optical Anisotropy of theSiC(001)-(3×2)Surface: Evidence for the Two-Adlayer Asymmetric-Dimer Model. Physical Review Letters. 2002;85(20):4381-4384. doi:10.1103/physrevlett.85.4381

Esser N, Schmidt WG, Cobet C, et al. Atomic structure and optical anisotropy of III–V(001) surfaces. Journal of Vacuum Science &; Technology B: Microelectronics and Nanometer Structures. 2001;19(5). doi:10.1116/1.1394730

Pulci O, Schmidt WG, Bechstedt F. Structure and Energetics of P-rich GaP(001) Surfaces. physica status solidi (a). 2001;184(1):105-110. doi:10.1002/1521-396x(200103)184:1&#60;105::aid-pssa105&#62;3.0.co;2-d

Hingerl K, Balderas-Navarro R., Bonanni A, Tichopadek P, Schmidt WG. On the origin of resonance features in reflectance difference data of silicon. Applied Surface Science. 2001;175-176:769-776. doi:10.1016/s0169-4332(01)00114-3

Schmidt WG, Bechstedt F, Bernholc J. Terrace and step contributions to the optical anisotropy of Si(001) surfaces. Physical Review B. 2001;63. doi:10.1103/physrevb.63.045322

Pulci O, Lüdge K, Schmidt WG, Bechstedt F. First-principles study of (2×1) and (2×2) phosphorus-rich InP(001) surfaces. Surface Science. 2000;464:272-282. doi:10.1016/s0039-6028(00)00729-9

Schmidt WG, Bernholc J, Bechstedt F. (001) Surfaces of GaP and InP: structural motifs, electronic states and optical signatures. Applied Surface Science. 2000;166:179-184. doi:10.1016/s0169-4332(00)00406-2

Frisch AM, Vogt P, Visbeck S, et al. Angle Resolved Photoemission Spectroscopy of the InP(001) surface. Applied Surface Science. 2000;166:224-230. doi:10.1016/s0169-4332(00)00431-1

Schmidt WG, Mirbt S, Bechstedt F. Surface phase diagram of (2×4) and (4×2) reconstructions of GaAs(001). Physical Review B. 2000;62(12):8087-8091. doi:10.1103/physrevb.62.8087

Schmidt WG, Esser N, Frisch AM, et al. Understanding reflectance anisotropy: Surface-state signatures and bulk-related features in the optical spectrum ofInP(001)(2×4). Physical Review B. 2000;61:335-338. doi:10.1103/physrevb.61.r16335

Schmidt WG, Bechstedt F, Bernholc J. Understanding reflectance anisotropy: Surface-state signatures and bulk-related features. Journal of Vacuum Science &; Technology B: Microelectronics and Nanometer Structures. 2000;18(4). doi:10.1116/1.1305289

Schmidt WG, Bernholc J. Step-induced optical anisotropy of Si(111):H surfaces. Physical Review B. 2000;61(11):7604-7608. doi:10.1103/physrevb.61.7604

Bernholc J, Briggs EL, Bungaro C, et al. Large-Scale Applications of Real-Space Multigrid Methods to Surfaces, Nanotubes and Quantum Transport. In: Computer Simulation of Materials at Atomic Level. Vol 1. 217. physica status solidi (b); 2000:685-701. doi:10.1002/3527603107.ch33