Hingerl K, Balderas-Navarro R., Bonanni A, Tichopadek P, Schmidt WG. On the origin of resonance features in reflectance difference data of silicon. Applied Surface Science. 2001;175-176:769-776. doi:10.1016/s0169-4332(01)00114-3

Schmidt WG, Bechstedt F, Bernholc J. Terrace and step contributions to the optical anisotropy of Si(001) surfaces. Physical Review B. 2001;63. doi:10.1103/physrevb.63.045322

Pulci O, Lüdge K, Schmidt WG, Bechstedt F. First-principles study of (2×1) and (2×2) phosphorus-rich InP(001) surfaces. Surface Science. 2000;464:272-282. doi:10.1016/s0039-6028(00)00729-9

Schmidt WG, Bernholc J, Bechstedt F. (001) Surfaces of GaP and InP: structural motifs, electronic states and optical signatures. Applied Surface Science. 2000;166:179-184. doi:10.1016/s0169-4332(00)00406-2

Frisch AM, Vogt P, Visbeck S, et al. Angle Resolved Photoemission Spectroscopy of the InP(001) surface. Applied Surface Science. 2000;166:224-230. doi:10.1016/s0169-4332(00)00431-1

Schmidt WG, Mirbt S, Bechstedt F. Surface phase diagram of (2×4) and (4×2) reconstructions of GaAs(001). Physical Review B. 2000;62(12):8087-8091. doi:10.1103/physrevb.62.8087

Schmidt WG, Esser N, Frisch AM, et al. Understanding reflectance anisotropy: Surface-state signatures and bulk-related features in the optical spectrum ofInP(001)(2×4). Physical Review B. 2000;61:335-338. doi:10.1103/physrevb.61.r16335

Schmidt WG, Bechstedt F, Bernholc J. Understanding reflectance anisotropy: Surface-state signatures and bulk-related features. Journal of Vacuum Science &; Technology B: Microelectronics and Nanometer Structures. 2000;18(4). doi:10.1116/1.1305289

Schmidt WG, Bernholc J. Step-induced optical anisotropy of Si(111):H surfaces. Physical Review B. 2000;61(11):7604-7608. doi:10.1103/physrevb.61.7604

Bernholc J, Briggs EL, Bungaro C, et al. Large-Scale Applications of Real-Space Multigrid Methods to Surfaces, Nanotubes and Quantum Transport. In: Computer Simulation of Materials at Atomic Level. Vol 1. 217. physica status solidi (b); 2000:685-701. doi:10.1002/3527603107.ch33

Bechstedt F, Adolph B, Schmidt WG. Ab initio calculation of linear and nonlinear optical properties of semiconductor structures. Brazilian Journal of Physics. 1999;29(4). doi:10.1590/s0103-97331999000400007

Schmidt WG, FATTEBERT JL, BERNHOLC J, BECHSTEDT F. SELF-ENERGY EFFECTS IN THE OPTICAL ANISOTROPY OF GaP(001). Surface Review and Letters. 1999;6(6):1159-1165. doi:10.1142/s0218625x99001281

Bechstedt F, Pulci O, Schmidt WG. Theoretical Aspects of the Optical Response of Semiconductor Surfaces. physica status solidi (a). 1999;175(5):5-16. doi:10.1002/(sici)1521-396x(199909)175:1&#60;5::aid-pssa5&#62;3.0.co;2-9

Esser N, Schmidt WG, Bernholc J, et al. GaP(001) and InP(001): Reflectance anisotropy and surface geometry. Journal of Vacuum Science &; Technology B: Microelectronics and Nanometer Structures. 1999;17(4). doi:10.1116/1.590810

Frisch AM, Schmidt WG, Bernholc J, Pristovsek M, Esser N, Richter W. (2×4)GaP(001) surface: Atomic structure and optical anisotropy. Physical Review B. 1999;60(4):2488-2494. doi:10.1103/physrevb.60.2488

Schmidt WG, Briggs EL, Bernholc J, Bechstedt F. Structural fingerprints in the reflectance anisotropy spectra ofInP(001)(2×4)surfaces. Physical Review B. 1999;59(3):2234-2239. doi:10.1103/physrevb.59.2234

Shkrebtii AI, Esser N, Richter W, et al. Reflectance Anisotropy of GaAs(100): Theory and Experiment. Physical Review Letters. 1998;81(3):721-724. doi:10.1103/physrevlett.81.721

Schmidt WG, Bechstedt F. Geometry and electronic structure of InP(001)(2×4) reconstructions. Surface Science. 1998;409(3):474-484. doi:10.1016/s0039-6028(98)00260-x

Schmidt WG, Bechstedt F, Esser N, Pristovsek M, Schultz C, Richter W. Atomic structure of InP(001)-(2×4): A dimer reconstruction. Physical Review B. 1998;57(23):14596-14599. doi:10.1103/physrevb.57.14596

Schmidt WG, Käckell P, Bechstedt F. In-induced (4 × 2) reconstructions of GaAs(001) surfaces. Applied Surface Science. 1998;123-124:136-140. doi:10.1016/s0169-4332(97)00510-2