K. Hingerl, R. . Balderas-Navarro, A. Bonanni, P. Tichopadek, and W. G. Schmidt, “On the origin of resonance features in reflectance difference data of silicon,” Applied Surface Science, vol. 175–176, pp. 769–776, 2001.

W. G. Schmidt, F. Bechstedt, and J. Bernholc, “Terrace and step contributions to the optical anisotropy of Si(001) surfaces,” Physical Review B, vol. 63, 2001.

O. Pulci, K. Lüdge, W. G. Schmidt, and F. Bechstedt, “First-principles study of (2×1) and (2×2) phosphorus-rich InP(001) surfaces,” Surface Science, vol. 464, pp. 272–282, 2000.

W. G. Schmidt, J. Bernholc, and F. Bechstedt, “(001) Surfaces of GaP and InP: structural motifs, electronic states and optical signatures,” Applied Surface Science, vol. 166, pp. 179–184, 2000.

A. M. Frisch et al., “Angle Resolved Photoemission Spectroscopy of the InP(001) surface,” Applied Surface Science, vol. 166, pp. 224–230, 2000.

W. G. Schmidt, S. Mirbt, and F. Bechstedt, “Surface phase diagram of (2×4) and (4×2) reconstructions of GaAs(001),” Physical Review B, vol. 62, no. 12, pp. 8087–8091, 2000.

W. G. Schmidt et al., “Understanding reflectance anisotropy: Surface-state signatures and bulk-related features in the optical spectrum ofInP(001)(2×4),” Physical Review B, vol. 61, pp. 335–338, 2000.

W. G. Schmidt, F. Bechstedt, and J. Bernholc, “Understanding reflectance anisotropy: Surface-state signatures and bulk-related features,” Journal of Vacuum Science &; Technology B: Microelectronics and Nanometer Structures, vol. 18, no. 4, 2000.

W. G. Schmidt and J. Bernholc, “Step-induced optical anisotropy of Si(111):H surfaces,” Physical Review B, vol. 61, no. 11, pp. 7604–7608, 2000.

J. Bernholc et al., “Large-Scale Applications of Real-Space Multigrid Methods to Surfaces, Nanotubes and Quantum Transport,” in Computer Simulation of Materials at Atomic Level, vol. 1, physica status solidi (b), 2000, pp. 685–701.

F. Bechstedt, B. Adolph, and W. G. Schmidt, “Ab initio calculation of linear and nonlinear optical properties of semiconductor structures,” Brazilian Journal of Physics, vol. 29, no. 4, 1999.

W. G. Schmidt, J. L. FATTEBERT, J. BERNHOLC, and F. BECHSTEDT, “SELF-ENERGY EFFECTS IN THE OPTICAL ANISOTROPY OF GaP(001),” Surface Review and Letters, vol. 6, no. 6, pp. 1159–1165, 1999.

F. Bechstedt, O. Pulci, and W. G. Schmidt, “Theoretical Aspects of the Optical Response of Semiconductor Surfaces,” physica status solidi (a), vol. 175, no. 5, pp. 5–16, 1999.

N. Esser et al., “GaP(001) and InP(001): Reflectance anisotropy and surface geometry,” Journal of Vacuum Science &; Technology B: Microelectronics and Nanometer Structures, vol. 17, no. 4, 1999.

A. M. Frisch, W. G. Schmidt, J. Bernholc, M. Pristovsek, N. Esser, and W. Richter, “(2×4)GaP(001) surface: Atomic structure and optical anisotropy,” Physical Review B, vol. 60, no. 4, pp. 2488–2494, 1999.

W. G. Schmidt, E. L. Briggs, J. Bernholc, and F. Bechstedt, “Structural fingerprints in the reflectance anisotropy spectra ofInP(001)(2×4)surfaces,” Physical Review B, vol. 59, no. 3, pp. 2234–2239, 1999.

A. I. Shkrebtii et al., “Reflectance Anisotropy of GaAs(100): Theory and Experiment,” Physical Review Letters, vol. 81, no. 3, pp. 721–724, 1998.

W. G. Schmidt and F. Bechstedt, “Geometry and electronic structure of InP(001)(2×4) reconstructions,” Surface Science, vol. 409, no. 3, pp. 474–484, 1998.

W. G. Schmidt, F. Bechstedt, N. Esser, M. Pristovsek, C. Schultz, and W. Richter, “Atomic structure of InP(001)-(2×4): A dimer reconstruction,” Physical Review B, vol. 57, no. 23, pp. 14596–14599, 1998.

W. G. Schmidt, P. Käckell, and F. Bechstedt, “In-induced (4 × 2) reconstructions of GaAs(001) surfaces,” Applied Surface Science, vol. 123–124, pp. 136–140, 1998.