On the origin of resonance features in reflectance difference data of silicon
K. Hingerl, R.. Balderas-Navarro, A. Bonanni, P. Tichopadek, W.G. Schmidt, Applied Surface Science 175–176 (2001) 769–776.

Terrace and step contributions to the optical anisotropy of Si(001) surfaces
W.G. Schmidt, F. Bechstedt, J. Bernholc, Physical Review B 63 (2001).

First-principles study of (2×1) and (2×2) phosphorus-rich InP(001) surfaces
O. Pulci, K. Lüdge, W.G. Schmidt, F. Bechstedt, Surface Science 464 (2000) 272–282.

(001) Surfaces of GaP and InP: structural motifs, electronic states and optical signatures
W.G. Schmidt, J. Bernholc, F. Bechstedt, Applied Surface Science 166 (2000) 179–184.

Angle Resolved Photoemission Spectroscopy of the InP(001) surface
A.M. Frisch, P. Vogt, S. Visbeck, T. Hannappel, F. Willig, W. Braun, W. Richter, J. Bernholc, W.G. Schmidt, N. Esser, Applied Surface Science 166 (2000) 224–230.

Surface phase diagram of (2×4) and (4×2) reconstructions of GaAs(001)
W.G. Schmidt, S. Mirbt, F. Bechstedt, Physical Review B 62 (2000) 8087–8091.

Understanding reflectance anisotropy: Surface-state signatures and bulk-related features in the optical spectrum ofInP(001)(2×4)
W.G. Schmidt, N. Esser, A.M. Frisch, P. Vogt, J. Bernholc, F. Bechstedt, M. Zorn, T. Hannappel, S. Visbeck, F. Willig, W. Richter, Physical Review B 61 (2000) 335–338.

Understanding reflectance anisotropy: Surface-state signatures and bulk-related features
W.G. Schmidt, F. Bechstedt, J. Bernholc, Journal of Vacuum Science &; Technology B: Microelectronics and Nanometer Structures 18 (2000).

Step-induced optical anisotropy of Si(111):H surfaces
W.G. Schmidt, J. Bernholc, Physical Review B 61 (2000) 7604–7608.

Large-Scale Applications of Real-Space Multigrid Methods to Surfaces, Nanotubes and Quantum Transport
J. Bernholc, E.L. Briggs, C. Bungaro, M. Buongiorno Nardelli, J.-L. Fattebert, K. Rapcewicz, C. Roland, W.G. Schmidt, Q. Zhao, in: Computer Simulation of Materials at Atomic Level, physica status solidi (b), 2000, pp. 685–701.

Ab initio calculation of linear and nonlinear optical properties of semiconductor structures
F. Bechstedt, B. Adolph, W.G. Schmidt, Brazilian Journal of Physics 29 (1999).

SELF-ENERGY EFFECTS IN THE OPTICAL ANISOTROPY OF GaP(001)
W.G. Schmidt, J.L. FATTEBERT, J. BERNHOLC, F. BECHSTEDT, Surface Review and Letters 6 (1999) 1159–1165.

Theoretical Aspects of the Optical Response of Semiconductor Surfaces
F. Bechstedt, O. Pulci, W.G. Schmidt, Physica Status Solidi (A) 175 (1999) 5–16.

GaP(001) and InP(001): Reflectance anisotropy and surface geometry
N. Esser, W.G. Schmidt, J. Bernholc, A.M. Frisch, P. Vogt, M. Zorn, M. Pristovsek, W. Richter, F. Bechstedt, T. Hannappel, S. Visbeck, Journal of Vacuum Science &; Technology B: Microelectronics and Nanometer Structures 17 (1999).

(2×4)GaP(001) surface: Atomic structure and optical anisotropy
A.M. Frisch, W.G. Schmidt, J. Bernholc, M. Pristovsek, N. Esser, W. Richter, Physical Review B 60 (1999) 2488–2494.

Structural fingerprints in the reflectance anisotropy spectra ofInP(001)(2×4)surfaces
W.G. Schmidt, E.L. Briggs, J. Bernholc, F. Bechstedt, Physical Review B 59 (1999) 2234–2239.

Reflectance Anisotropy of GaAs(100): Theory and Experiment
A.I. Shkrebtii, N. Esser, W. Richter, W.G. Schmidt, F. Bechstedt, B.O. Fimland, A. Kley, R. Del Sole, Physical Review Letters 81 (1998) 721–724.

Geometry and electronic structure of InP(001)(2×4) reconstructions
W.G. Schmidt, F. Bechstedt, Surface Science 409 (1998) 474–484.

Atomic structure of InP(001)-(2×4): A dimer reconstruction
W.G. Schmidt, F. Bechstedt, N. Esser, M. Pristovsek, C. Schultz, W. Richter, Physical Review B 57 (1998) 14596–14599.

In-induced (4 × 2) reconstructions of GaAs(001) surfaces
W.G. Schmidt, P. Käckell, F. Bechstedt, Applied Surface Science 123–124 (1998) 136–140.