Optical Properties of Ordered As Layers on InP(110) Surfaces
P.V. Santos, B. Koopmans, N. Esser, W.G. Schmidt, F. Bechstedt, Physical Review Letters 77 (1996) 759–762.

Atomic structures of GaAs(100)-(2 × 4) reconstructions
W.G. Schmidt, F. Bechstedt, Surface Science 360 (1996) L473–L477.

Adatoms and vacancies on the diamond(111) surface
F. Bechstedt, W.G. Schmidt, A. Scholze, Europhysics Letters (EPL) 35 (1996) 585–590.

Adsorption of group-V elements on III–V (1 1 0) surfaces
W. Schmidt, Surface Science Reports 25 (1996) 141–223.

Annihilation of delocalized positrons: a comparison of diamond and silicon
W.G. Schmidt, W.. Verwoerd, Physics Letters A 222 (1996) 275–280.

Structure of the diamond (111) surface: Single-dangling-bond versus triple-dangling-bond face
A. Scholze, W.G. Schmidt, F. Bechstedt, Physical Review B 53 (1996) 13725–13733.

3d core-level shifts at
W.G. Schmidt, P. Käckell, F. Bechstedt, Surface Science 357–358 (1996) 545–549.

Diamond (111) and (100) surface reconstructions
A. Scholze, W.G. Schmidt, F. Bechstedt, Thin Solid Films 281–282 (1996) 256–259.

Phonons at III–V (110) surfaces
W.G. Schmidt, F. Bechstedt, G.P. Srivastava, Surface Science 352–354 (1996) 83–88.

Dimerized, buckled, or ideal chains on the diamond (111)2 × 1 surface?
W.G. Schmidt, A. Scholze, F. Bechstedt, Surface Science 351 (1996) 183–188.

Se-induced 3d core-level shifts of GaAs(110)
P. Käckell, W.G. Schmidt, F. Bechstedt, Applied Surface Science 104–105 (1996) 141–146.

Diamond (111) and (100) surface: ab initio study of the atomic and electronic structure
A. Scholze, W.G. Schmidt, P. Käckell, F. Bechstedt, Materials Science and Engineering: B 37 (1996) 158–161.

Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces
P.V. Santos, N. Esser, J. Groenen, M. Cardona, W.G. Schmidt, F. Bechstedt, Physical Review B 52 (1995) 17379–17385.

Optical properties of Sb-terminated GaAs and InP (110) surfaces
P.V. Santos, N. Esser, M. Cardona, W.G. Schmidt, F. Bechstedt, Physical Review B 52 (1995) 12158–12167.

III-V(110) surface dynamics from anab initiofrozen-phonon approach
W.G. Schmidt, F. Bechstedt, G.P. Srivastava, Physical Review B 52 (1995) 2001–2007.

Se/GaAs(110): energetics and structure
W.G. Schmidt, F. Bechstedt, Surface Science 331–333 (1995) 557–563.

Quasi-particle band structure of C(111)2 × 1 and C(100)2 × 1 surfaces
C. Kress, M. Fiedler, W.G. Schmidt, F. Bechstedt, Surface Science 331–333 (1995) 1152–1156.

III-V(110)/Sb(1 ML): structural and dynamical properties
W.G. Schmidt, G.P. Srivastava, Surface Science 331–333 (1995) 540–545.

Geometrical and electronic structure of the reconstructed diamond (100) surface
C. Kress, M. Fiedler, W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17697–17700.

Exchange reactions versus adsorption geometries for Se/GaAs(110)
W.G. Schmidt, F. Bechstedt, Physical Review B 50 (1995) 17651–17654.