P. Käckell, W. G. Schmidt, and F. Bechstedt, “Se-induced 3d core-level shifts of GaAs(110),” Applied Surface Science, vol. 104–105, pp. 141–146, 1996.

A. Scholze, W. G. Schmidt, P. Käckell, and F. Bechstedt, “Diamond (111) and (100) surface: ab initio study of the atomic and electronic structure,” Materials Science and Engineering: B, vol. 37, no. 1–3, pp. 158–161, 1996.

P. V. Santos, N. Esser, J. Groenen, M. Cardona, W. G. Schmidt, and F. Bechstedt, “Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces,” Physical Review B, vol. 52, no. 24, pp. 17379–17385, 1995.

P. V. Santos, N. Esser, M. Cardona, W. G. Schmidt, and F. Bechstedt, “Optical properties of Sb-terminated GaAs and InP (110) surfaces,” Physical Review B, vol. 52, no. 16, pp. 12158–12167, 1995.

W. G. Schmidt, F. Bechstedt, and G. P. Srivastava, “III-V(110) surface dynamics from anab initiofrozen-phonon approach,” Physical Review B, vol. 52, no. 3, pp. 2001–2007, 1995.

W. G. Schmidt and F. Bechstedt, “Se/GaAs(110): energetics and structure,” Surface Science, vol. 331–333, no. Part A, pp. 557–563, 1995.

C. Kress, M. Fiedler, W. G. Schmidt, and F. Bechstedt, “Quasi-particle band structure of C(111)2 × 1 and C(100)2 × 1 surfaces,” Surface Science, vol. 331–333, pp. 1152–1156, 1995.

W. G. Schmidt and G. P. Srivastava, “III-V(110)/Sb(1 ML): structural and dynamical properties,” Surface Science, vol. 331–333, no. Part A, pp. 540–545, 1995.

C. Kress, M. Fiedler, W. G. Schmidt, and F. Bechstedt, “Geometrical and electronic structure of the reconstructed diamond (100) surface,” Physical Review B, vol. 50, no. 23, pp. 17697–17700, 1995.

W. G. Schmidt and F. Bechstedt, “Exchange reactions versus adsorption geometries for Se/GaAs(110),” Physical Review B, vol. 50, no. 23, pp. 17651–17654, 1995.

W. G. Schmidt and F. Bechstedt, “Se/GaAs(110): Atomic and electronic structure,” Physical Review B, vol. 50, no. 23, pp. 17280–17291, 1995.

F. Bechstedt, W. G. Schmidt, and B. Wenzien, “Energetics and Structure of Ordered Sb Overlayers and Sb Clusters on GaAs(110) Probed by Ab Initio Calculations,” Europhysics Letters (EPL), vol. 25, no. 5, pp. 357–362, 1994.

W. G. Schmidt and G. Srivastava, “First principles calculations of interface phonons of an Epitaxial Sb monolayer on GaAs(110) and InP(110),” Solid State Communications, vol. 89, no. 4, pp. 345–348, 1994.

W. G. Schmidt, B. Wenzien, and F. Bechstedt, “Coverage-dependent bonding of Sb on GaAs (110),” Surface Science, vol. 307–309, no. Part A, pp. 235–240, 1994.

W. G. Schmidt, B. Wenzien, and F. Bechstedt, “Chemisorption of antimony on GaAs(110),” Physical Review B, vol. 49, no. 7, pp. 4731–4744, 1994.

W. G. Schmidt and G. P. Srivastava, “Chemisorption of aluminium on GaAs(110),” Journal of Physics: Condensed Matter, vol. 5, no. 49, pp. 9025–9036, 1993.

W. G. Schmidt, B. Wenzien, and F. Bechstedt, “AB initio calculation of the atomic and electronic structure for Sb adsorbed on GaAs(110),” Czechoslovak Journal of Physics, vol. 43, no. 9–10, pp. 1003–1007, 1993.