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O. Lahr et al., “Full-Swing, High-Gain Inverters Based on ZnSnO JFETs and MESFETs,”10.1109/ted.2019.2922696__IEEE Transactions on Electron Devices, vol. 66, no. 8, pp. 3376–3381, 2019, doi:10.1109/ted.2019.2922696 .
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U. Ali, M. Bober, and A. Thiede, “Design of voltage controlled oscillators (VCOs) in D-band and their phase noise measurements using frequency down-conversion,”10.1109/eumic.2016.7777554__2016, doi:10.1109/eumic.2016.7777554 .
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U. Ali, M. Bober, and A. Thiede, “An integrated 118.4 to122 GHz low noise phase-locked loop (PLL) in 0.13 µm SiGe BiCMOS technology,”10.1109/gemic.2016.7461611__2016, doi:10.1109/gemic.2016.7461611 .
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J. A. Russer, N. Uddin, A. S. Awny, A. Thiede, and P. Russer, “Near-field measurement of stochastic electromagnetic fields,”10.1109/memc.2015.7336761__IEEE Electromagnetic Compatibility Magazine, vol. 4, no. 3, pp. 79–85, 2015, doi:10.1109/memc.2015.7336761 .
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U. Ali, M. Bober, A. Thiede, A. Awny, and G. Fischer, “High speed static frequency divider design with 111.6 GHz self-oscillation frequency (SOF) in 0.13 &;amp;#;m SiGe BiCMOS technology,”10.1109/gemic.2015.7107798__2015, doi:10.1109/gemic.2015.7107798 .
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U. Ali, M. Bober, A. Thiede, and S. Wagner, “–166 GHz wide band high speed digital dynamic frequency divider design in 0.13 ;cm SiGe BiCMOS technology,”10.1109/eumic.2015.7345071__2015, doi:10.1109/eumic.2015.7345071 .
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U. Ali, G. Fischer, and A. Thiede, “Low power fundamental VCO design in D-band using 0.13 &;amp;#;m SiGe BiCMOS technology,”10.1109/gemic.2015.7107827__2015, doi:10.1109/gemic.2015.7107827 .
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A. Awny, L. Möller, J. Junio, C. Scheytt, and A. Thiede, “Design and Measurement Techniques for an 80 Gb/s 1-Tap Decision Feedback Equalizer,”10.1109/JSSC.2013.2285385__IEEE JOURNAL OF SOLID-STATE CIRCUITS, vol. Vol.49, no. No.2, pp. 452–470, 2014, doi:10.1109/JSSC.2013.2285385 .
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L. Möller, A. Awny, J. Junio, C. Scheytt, and A. Thiede, “Gb/s Decision Feedback Equalizer for Intersymbol Interference,”10.1364/OFC.2013.OW4B.2 __2013, doi:10.1364/OFC.2013.OW4B.2  .
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U. Ali and A. Thiede, “A millimeter wave quad-phase ring oscillator using 0.13 &;amp;#;m SiGe BiCMOS HBT technology,”10.1109/iscdg.2013.6656297__2013, doi:10.1109/iscdg.2013.6656297 .
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