Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications
R. Otterbach, U. Hilleringmann, T.J. Horstmann, K. Goser, Diamond and Related Materials 10 (2002) 511–514.
LibreCat: /record/39876
DOI: 10.1016/s0925-9635(01)00373-9

A structure definition technique for 25 nm lines of silicon and related materials
U. Hilleringmann, T. Vieregge, J.T. Horstmann, Microelectronic Engineering 53 (2002) 569–572.
LibreCat: /record/39877
DOI: 10.1016/s0167-9317(00)00380-4

Reactive ion etching of CVD-diamond for piezoresistive pressure sensors
R. Otterbach, U. Hilleringmann, Diamond and Related Materials 11 (2002) 841–844.
LibreCat: /record/39874
DOI: 10.1016/s0925-9635(01)00703-8

Metallisierung und Kontakte
U. Hilleringmann, in: Silizium-Halbleitertechnologie, Vieweg+Teubner Verlag, Wiesbaden, 2002, pp. 131–151.
LibreCat: /record/39875
DOI: 10.1007/978-3-322-94119-0_8

Nanometer Scale Lateral Structures of MOS Type Layers
U. Hilleringmann, T. Vieregge, J. Horstmann, in: Proceedings Micro. Tec, 2000, pp. 49–53.
LibreCat: /record/39884

High rate CVD-diamond etching for high temperature pressure sensor applications
R. Otterbach, U. Hilleringmann, in: 29th European Solid-State Device Research Conference, 1999, pp. 320–323.
LibreCat: /record/39890

Correlation Analysis of the Statistical Electrical Parameter Fluctuations in 50 nm MOS-Transistors
J.T. Horstmann, U. Hilleringmann, K. Goser, in: 28th European Solid-State Device Research Conference, 1998, pp. 512–515.
LibreCat: /record/39893

CMOS-compatible organic light-emitting diodes
L.M.H. Heinrich, J. Muller, U. Hilleringmann, K.F. Goser, A. Holmes, D.-H. Hwang, R. Stern, IEEE Transactions on Electron Devices 44 (1997) 1249–1252.
LibreCat: /record/39896
DOI: 10.1109/16.605463

Analyses of Sub 1/4-Micron MOS-Transistors by Visible Light Emission
J. Muller, G. Wirth, U. Hilleringmann, K. Goser, in: ESSDERC ’96: Proceedings of the 26th European Solid State Device Research Conference, 1996, pp. 947–950.
LibreCat: /record/39902

Characterization and Matching Analysis of 50 nm-NMOS-Transistors
J.T. Horstmann, U. Hilleringmann, K. Goser, in: ESSDERC ’96: Proceedings of the 26th European Solid State Device Research Conference, 1996, pp. 253–256.
LibreCat: /record/39900