Structures with a minimum feature size of less than 100 nm in CVD-diamond for sensor applications
R. Otterbach, U. Hilleringmann, T.J. Horstmann, K. Goser, Diamond and Related Materials 10 (2002) 511–514.

A structure definition technique for 25 nm lines of silicon and related materials
U. Hilleringmann, T. Vieregge, J.T. Horstmann, Microelectronic Engineering 53 (2002) 569–572.

Reactive ion etching of CVD-diamond for piezoresistive pressure sensors
R. Otterbach, U. Hilleringmann, Diamond and Related Materials 11 (2002) 841–844.

Metallisierung und Kontakte
U. Hilleringmann, in: Silizium-Halbleitertechnologie, Vieweg+Teubner Verlag, Wiesbaden, 2002, pp. 131–151.

Nanometer Scale Lateral Structures of MOS Type Layers
U. Hilleringmann, T. Vieregge, J. Horstmann, in: Proceedings Micro. Tec, 2000, pp. 49–53.

High rate CVD-diamond etching for high temperature pressure sensor applications
R. Otterbach, U. Hilleringmann, in: 29th European Solid-State Device Research Conference, 1999, pp. 320–323.

Correlation Analysis of the Statistical Electrical Parameter Fluctuations in 50 nm MOS-Transistors
J.T. Horstmann, U. Hilleringmann, K. Goser, in: 28th European Solid-State Device Research Conference, 1998, pp. 512–515.

CMOS-compatible organic light-emitting diodes
L.M.H. Heinrich, J. Muller, U. Hilleringmann, K.F. Goser, A. Holmes, D.-H. Hwang, R. Stern, IEEE Transactions on Electron Devices 44 (1997) 1249–1252.

Analyses of Sub 1/4-Micron MOS-Transistors by Visible Light Emission
J. Muller, G. Wirth, U. Hilleringmann, K. Goser, in: ESSDERC ’96: Proceedings of the 26th European Solid State Device Research Conference, 1996, pp. 947–950.

Characterization and Matching Analysis of 50 nm-NMOS-Transistors
J.T. Horstmann, U. Hilleringmann, K. Goser, in: ESSDERC ’96: Proceedings of the 26th European Solid State Device Research Conference, 1996, pp. 253–256.

ESSDERC’96, Bologna, Italy
J. Horstmann, U. Hilleringmann, K. Goser, in: Conf. Dig, 1996.

Conjugated Polymers for CMOS Compatible Applications
J. Muller, V. Mankowski, U. Hilleringmann, K. Goser, A. Holmes, O. Gelsen, R. Stern, in: ESSDERC ’95: Proceedings of the 25th European Solid State Device Research Conference, 1995, pp. 659–662.

Micromechanic Pressure Sensors with Optical Readout and CMOS-Amplifiers on Silicon
U. Hilleringmann, S. Adams, K. Goser, in: ESSDERC ’94: 24th European Solid State Device Research Conference, 1994, pp. 387–390.

Monolithic System Integration of Optical Devices, Photodetectors and Analog Transimpedance CMOS Amplifiers
E. Brab, U. Hilleringmann, K. Schumacher, in: ESSCIRC ’93: Nineteenth European Solid-State Circuits Conference, 1993, pp. 242–245.

Hot Carrier Monitoring in NMOS Transistors by Visible Light Emission
I. Schonstein, J. Muller, U. Hilleringmann, K. Goser, in: ESSDERC ’93: 23rd European Solid State Device Research Conference, 1993, pp. 421–424.

Micromechanic pressure sensors with optical readout and CMOS-preamplifiers on one silicon chip: Processing and first results
U. Hilleringmann, S. Adam, K. Goser, in: ESSDtRC’93, 1993.

A Silicon Technology for Monolithic Integration of Optical Waveguides, Photodetectors and VLSI CMOS Circuits
U. Hilleringmann, S. Adams, K. Goser, in: Proceedings ISSSE’92, 1992, pp. 304–307.

Electrooptical coupling of waveguides and VLSI circuits integrated on one silicon chip
S. Adams, U. Hilleringmann, K. Goser, in: EFOC LAN, 1992, pp. 92–92.

Application and implementation of neural networks in microelectronics
K. Goser, U. Hilleringmann, U. Rückert, in: A. Prieto (Ed.), Artificial Neural Networks, Springer Berlin Heidelberg, Berlin, Heidelberg, 1991, pp. 243–259.