Scholz, R., Müller, A.-D., Müller, F., Thurzo, I., Paez, B. A., Mancera, L., Zahn, D. R. T., Pannemann, C., &; Hilleringmann, U. (2005). Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry. In Z. Bao &; D. J. Gundlach (Eds.), SPIE Proceedings. SPIE.https://doi.org/10.1117/12.617004 
LibreCat: /record/39834
DOI: 10.1117/12.617004

Hilleringmann, U. (2004). Ätztechnik. In Silizium-Halbleitertechnologie (pp. 65–90). Vieweg+Teubner Verlag.https://doi.org/10.1007/978-3-322-94072-8_5 
LibreCat: /record/39850
DOI: 10.1007/978-3-322-94072-8_5

Hilleringmann, U., &; Pannemann, C. (2004). Imprint structured organic thin film transistors as driving circuit in single-use sensor applications. In G. Zhang, H. Zhao, &; Z. Wang (Eds.), Fifth International Symposium on Instrumentation and Control Technology. SPIE.https://doi.org/10.1117/12.521463 
LibreCat: /record/39872
DOI: 10.1117/12.521463

Otterbach, R., &; Hilleringmann, U. (2004). Piezoresistive pressure sensors in CVD diamond for high-temperature applications. In G. Zhang, H. Zhao, &; Z. Wang (Eds.), Fifth International Symposium on Instrumentation and Control Technology. SPIE.https://doi.org/10.1117/12.521928 
LibreCat: /record/39873
DOI: 10.1117/12.521928

Hilleringmann, U., Vieregge, T., &; Horstmann, J. T. (2003). Masking and etching of silicon and related materials for geometries down to 25 nm. IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.999).https://doi.org/10.1109/iecon.1999.822171 
LibreCat: /record/39887
DOI: 10.1109/iecon.1999.822171

Horstmann, J. T., Hilleringmann, U., &; Goser, K. (2003). Matching analysis of NMOS-transistors with a channel length down to 30 nm. IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.999).https://doi.org/10.1109/iecon.1999.822163 
LibreCat: /record/39888
DOI: 10.1109/iecon.1999.822163

Wirth, G., Hilleringmann, U., Horstmann, J. T., &; Goser, K. (2003). Negative differential resistance in ultrashort bulk MOSFETs. IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.999).https://doi.org/10.1109/iecon.1999.822164 
LibreCat: /record/39885
DOI: 10.1109/iecon.1999.822164

Pannemann, Ch., Diekmann, T., &; Hilleringmann, U. (2003). Nanometer scale organic thin film transistors with Pentacene. Microelectronic Engineering, 67–68, 845–852.https://doi.org/10.1016/s0167-9317(03)00146-1 
LibreCat: /record/39851
DOI: 10.1016/s0167-9317(03)00146-1

Hilleringmann, U., &; Goser, K. (2002). Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip. IEEE Transactions on Electron Devices, 42(5), 841–846.https://doi.org/10.1109/16.381978 
LibreCat: /record/39904
DOI: 10.1109/16.381978

Schönstein, I., Müller, J., Hilleringmann, U., &; Goser, K. (2002). Characterization of submicron NMOS devices due to visible light emission. Microelectronic Engineering, 21(1–4), 363–366.https://doi.org/10.1016/0167-9317(93)90092-j 
LibreCat: /record/39912
DOI: 10.1016/0167-9317(93)90092-j

Hilleringmann, U., &; Goser, K. (2002). Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. Microelectronic Engineering, 19(1–4), 211–214.https://doi.org/10.1016/0167-9317(92)90425-q 
LibreCat: /record/39914
DOI: 10.1016/0167-9317(92)90425-q

Brass, E., Hilleringmann, U., &; Schumacher, K. (2002). System integration of optical devices and analog CMOS amplifiers. IEEE Journal of Solid-State Circuits, 29(8), 1006–1010.https://doi.org/10.1109/4.297714 
LibreCat: /record/39906
DOI: 10.1109/4.297714

Brass, E., Hilleringmann, U., &; Schumacher, K. (2002). System integration of optical devices and analog CMOS amplifiers. IEEE Journal of Solid-State Circuits, 29(8), 1006–1010.https://doi.org/10.1109/4.297714 
LibreCat: /record/39907
DOI: 10.1109/4.297714

Horstmann, J. T., Hilleringmann, U., &; Goser, K. (2002). Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. Microelectronic Engineering, 30(1–4), 431–434.https://doi.org/10.1016/0167-9317(95)00280-4 
LibreCat: /record/39899
DOI: 10.1016/0167-9317(95)00280-4

Goser, K., Hilleringmann, U., Rueckert, U., &; Schumacher, K. (2002). VLSI technologies for artificial neural networks. IEEE Micro, 9(6), 28–44.https://doi.org/10.1109/40.42985 
LibreCat: /record/39925
DOI: 10.1109/40.42985

Mankowski, V., Hilleringmann, U., &; Schumacher, K. (2002). A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV. Microelectronic Engineering, 53(1–4), 525–528.https://doi.org/10.1016/s0167-9317(00)00370-1 
LibreCat: /record/39882
DOI: 10.1016/s0167-9317(00)00370-1

Horstmann, J. T., Hilleringmann, U., &; Goser, K. (2002). 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. Microelectronic Engineering, 53(1–4), 213–216.https://doi.org/10.1016/s0167-9317(00)00299-9 
LibreCat: /record/39879
DOI: 10.1016/s0167-9317(00)00299-9

Horstmann, J. T., Hilleringmann, U., &; Goser, K. (2002). Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.001).https://doi.org/10.1109/iecon.2000.972560 
LibreCat: /record/39880
DOI: 10.1109/iecon.2000.972560

Horstmann, J. T., Hilleringmann, U., &; Goser, K. (2002). Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.001).https://doi.org/10.1109/iecon.2000.972560 
LibreCat: /record/39881
DOI: 10.1109/iecon.2000.972560

Hilleringmann, U., Knospe, K., Heite, C., Schumacher, K., &; Goser, K. (2002). A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits. Microelectronic Engineering, 15(1–4), 289–292.https://doi.org/10.1016/0167-9317(91)90231-2 
LibreCat: /record/39919
DOI: 10.1016/0167-9317(91)90231-2