Scholz, R., Müller, A.-D., Müller, F., Thurzo, I., Paez, B. A., Mancera, L., Zahn, D. R. T., Pannemann, C., &; Hilleringmann, U. (2005). Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry. In Z. Bao &; D. J. Gundlach (Eds.), SPIE Proceedings. SPIE.https://doi.org/10.1117/12.617004 

Hilleringmann, U. (2004). Ätztechnik. In Silizium-Halbleitertechnologie (pp. 65–90). Vieweg+Teubner Verlag.https://doi.org/10.1007/978-3-322-94072-8_5 

Hilleringmann, U., &; Pannemann, C. (2004). Imprint structured organic thin film transistors as driving circuit in single-use sensor applications. In G. Zhang, H. Zhao, &; Z. Wang (Eds.), Fifth International Symposium on Instrumentation and Control Technology. SPIE.https://doi.org/10.1117/12.521463 

Otterbach, R., &; Hilleringmann, U. (2004). Piezoresistive pressure sensors in CVD diamond for high-temperature applications. In G. Zhang, H. Zhao, &; Z. Wang (Eds.), Fifth International Symposium on Instrumentation and Control Technology. SPIE.https://doi.org/10.1117/12.521928 

Hilleringmann, U., Vieregge, T., &; Horstmann, J. T. (2003). Masking and etching of silicon and related materials for geometries down to 25 nm. IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.999).https://doi.org/10.1109/iecon.1999.822171 

Horstmann, J. T., Hilleringmann, U., &; Goser, K. (2003). Matching analysis of NMOS-transistors with a channel length down to 30 nm. IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.999).https://doi.org/10.1109/iecon.1999.822163 

Wirth, G., Hilleringmann, U., Horstmann, J. T., &; Goser, K. (2003). Negative differential resistance in ultrashort bulk MOSFETs. IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.999).https://doi.org/10.1109/iecon.1999.822164 

Pannemann, Ch., Diekmann, T., &; Hilleringmann, U. (2003). Nanometer scale organic thin film transistors with Pentacene. Microelectronic Engineering, 67–68, 845–852.https://doi.org/10.1016/s0167-9317(03)00146-1 

Hilleringmann, U., &; Goser, K. (2002). Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip. IEEE Transactions on Electron Devices, 42(5), 841–846.https://doi.org/10.1109/16.381978 

Schönstein, I., Müller, J., Hilleringmann, U., &; Goser, K. (2002). Characterization of submicron NMOS devices due to visible light emission. Microelectronic Engineering, 21(1–4), 363–366.https://doi.org/10.1016/0167-9317(93)90092-j 

Hilleringmann, U., &; Goser, K. (2002). Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon. Microelectronic Engineering, 19(1–4), 211–214.https://doi.org/10.1016/0167-9317(92)90425-q 

Brass, E., Hilleringmann, U., &; Schumacher, K. (2002). System integration of optical devices and analog CMOS amplifiers. IEEE Journal of Solid-State Circuits, 29(8), 1006–1010.https://doi.org/10.1109/4.297714 

Brass, E., Hilleringmann, U., &; Schumacher, K. (2002). System integration of optical devices and analog CMOS amplifiers. IEEE Journal of Solid-State Circuits, 29(8), 1006–1010.https://doi.org/10.1109/4.297714 

Horstmann, J. T., Hilleringmann, U., &; Goser, K. (2002). Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique. Microelectronic Engineering, 30(1–4), 431–434.https://doi.org/10.1016/0167-9317(95)00280-4 

Goser, K., Hilleringmann, U., Rueckert, U., &; Schumacher, K. (2002). VLSI technologies for artificial neural networks. IEEE Micro, 9(6), 28–44.https://doi.org/10.1109/40.42985 

Mankowski, V., Hilleringmann, U., &; Schumacher, K. (2002). A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV. Microelectronic Engineering, 53(1–4), 525–528.https://doi.org/10.1016/s0167-9317(00)00370-1 

Horstmann, J. T., Hilleringmann, U., &; Goser, K. (2002). 1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. Microelectronic Engineering, 53(1–4), 213–216.https://doi.org/10.1016/s0167-9317(00)00299-9 

Horstmann, J. T., Hilleringmann, U., &; Goser, K. (2002). Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.001).https://doi.org/10.1109/iecon.2000.972560 

Horstmann, J. T., Hilleringmann, U., &; Goser, K. (2002). Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique. 2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.001).https://doi.org/10.1109/iecon.2000.972560 

Hilleringmann, U., Knospe, K., Heite, C., Schumacher, K., &; Goser, K. (2002). A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits. Microelectronic Engineering, 15(1–4), 289–292.https://doi.org/10.1016/0167-9317(91)90231-2