@inproceedingsScholz_Müller_Müller_Thurzo_Paez_Mancera_Zahn_Pannemann_Hilleringmann_2005, title=Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry, DOI=10.1117/12.617004, booktitle=SPIE Proceedings, publisher=SPIE, author=Scholz, R. and Müller, A.-D. and Müller, F. and Thurzo, I. and Paez, B. A. and Mancera, L. and Zahn, D. R. T. and Pannemann, C. and Hilleringmann, Ulrich, editor=Bao, Zhenan and Gundlach, David J., year=2005 

@inbookHilleringmann_2004, place=Wiesbaden, title=Ätztechnik, DOI=10.1007/978-3-322-94072-8_5, booktitle=Silizium-Halbleitertechnologie, publisher=Vieweg+Teubner Verlag, author=Hilleringmann, Ulrich, year=2004, pages=65–90 

@inproceedingsHilleringmann_Pannemann_2004, title=Imprint structured organic thin film transistors as driving circuit in single-use sensor applications, DOI=10.1117/12.521463, booktitle=Fifth International Symposium on Instrumentation and Control Technology, publisher=SPIE, author=Hilleringmann, Ulrich and Pannemann, C., editor=Zhang, Guangjun and Zhao, Huijie and Wang, Zhongyu, year=2004 

@inproceedingsOtterbach_Hilleringmann_2004, title=Piezoresistive pressure sensors in CVD diamond for high-temperature applications, DOI=10.1117/12.521928, booktitle=Fifth International Symposium on Instrumentation and Control Technology, publisher=SPIE, author=Otterbach, Ralf and Hilleringmann, Ulrich, editor=Zhang, Guangjun and Zhao, Huijie and Wang, Zhongyu, year=2004 

@inproceedingsHilleringmann_Vieregge_Horstmann_2003, title=Masking and etching of silicon and related materials for geometries down to 25 nm, DOI=10.1109/iecon.1999.822171, booktitle=IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.999), publisher=IEEE, author=Hilleringmann, Ulrich and Vieregge, T. and Horstmann, J.T., year=2003 

@inproceedingsHorstmann_Hilleringmann_Goser_2003, title=Matching analysis of NMOS-transistors with a channel length down to 30 nm, DOI=10.1109/iecon.1999.822163, booktitle=IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.999), publisher=IEEE, author=Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K., year=2003 

@inproceedingsWirth_Hilleringmann_Horstmann_Goser_2003, title=Negative differential resistance in ultrashort bulk MOSFETs, DOI=10.1109/iecon.1999.822164, booktitle=IECON’99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.999), publisher=IEEE, author=Wirth, G. and Hilleringmann, Ulrich and Horstmann, J.T. and Goser, K., year=2003 

@articlePannemann_Diekmann_Hilleringmann_2003, title=Nanometer scale organic thin film transistors with Pentacene, volume=67–68, DOI=10.1016/s0167-9317(03)00146-1, journal=Microelectronic Engineering, publisher=Elsevier BV, author=Pannemann, Ch. and Diekmann, T. and Hilleringmann, Ulrich, year=2003, pages=845–852 

@articleHilleringmann_Goser_2002, title=Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip, volume=42, DOI=10.1109/16.381978, number=5, journal=IEEE Transactions on Electron Devices, publisher=Institute of Electrical and Electronics Engineers (IEEE), author=Hilleringmann, Ulrich and Goser, K., year=2002, pages=841–846 

@articleSchönstein_Müller_Hilleringmann_Goser_2002, title=Characterization of submicron NMOS devices due to visible light emission, volume=21, DOI=10.1016/0167-9317(93)90092-j, number=1–4, journal=Microelectronic Engineering, publisher=Elsevier BV, author=Schönstein, I. and Müller, J. and Hilleringmann, Ulrich and Goser, K., year=2002, pages=363–366 

@articleHilleringmann_Goser_2002, title=Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon, volume=19, DOI=10.1016/0167-9317(92)90425-q, number=1–4, journal=Microelectronic Engineering, publisher=Elsevier BV, author=Hilleringmann, Ulrich and Goser, K., year=2002, pages=211–214 

@articleBrass_Hilleringmann_Schumacher_2002, title=System integration of optical devices and analog CMOS amplifiers, volume=29, DOI=10.1109/4.297714, number=8, journal=IEEE Journal of Solid-State Circuits, publisher=Institute of Electrical and Electronics Engineers (IEEE), author=Brass, E. and Hilleringmann, Ulrich and Schumacher, K., year=2002, pages=1006–1010 

@articleBrass_Hilleringmann_Schumacher_2002, title=System integration of optical devices and analog CMOS amplifiers, volume=29, DOI=10.1109/4.297714, number=8, journal=IEEE Journal of Solid-State Circuits, publisher=Institute of Electrical and Electronics Engineers (IEEE), author=Brass, E. and Hilleringmann, Ulrich and Schumacher, K., year=2002, pages=1006–1010 

@articleHorstmann_Hilleringmann_Goser_2002, title=Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique, volume=30, DOI=10.1016/0167-9317(95)00280-4, number=1–4, journal=Microelectronic Engineering, publisher=Elsevier BV, author=Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K., year=2002, pages=431–434 

@articleGoser_Hilleringmann_Rueckert_Schumacher_2002, title=VLSI technologies for artificial neural networks, volume=9, DOI=10.1109/40.42985, number=6, journal=IEEE Micro, publisher=Institute of Electrical and Electronics Engineers (IEEE), author=Goser, K. and Hilleringmann, Ulrich and Rueckert, U. and Schumacher, K., year=2002, pages=28–44 

@articleMankowski_Hilleringmann_Schumacher_2002, title=A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV, volume=53, DOI=10.1016/s0167-9317(00)00370-1, number=1–4, journal=Microelectronic Engineering, publisher=Elsevier BV, author=Mankowski, V. and Hilleringmann, Ulrich and Schumacher, K., year=2002, pages=525–528 

@articleHorstmann_Hilleringmann_Goser_2002, title=1/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique, volume=53, DOI=10.1016/s0167-9317(00)00299-9, number=1–4, journal=Microelectronic Engineering, publisher=Elsevier BV, author=Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K., year=2002, pages=213–216 

@inproceedingsHorstmann_Hilleringmann_Goser_2002, title=Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique, DOI=10.1109/iecon.2000.972560, booktitle=2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.001), publisher=IEEE, author=Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K., year=2002 

@inproceedingsHorstmann_Hilleringmann_Goser_2002, title=Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique, DOI=10.1109/iecon.2000.972560, booktitle=2000 26th Annual Conference of the IEEE Industrial Electronics Society. IECON 2000. 2000 IEEE International Conference on Industrial Electronics, Control and Instrumentation. 21st Century Technologies and Industrial Opportunities (Cat. No.001), publisher=IEEE, author=Horstmann, J.T. and Hilleringmann, Ulrich and Goser, K., year=2002 

@articleHilleringmann_Knospe_Heite_Schumacher_Goser_2002, title=A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits, volume=15, DOI=10.1016/0167-9317(91)90231-2, number=1–4, journal=Microelectronic Engineering, publisher=Elsevier BV, author=Hilleringmann, Ulrich and Knospe, K. and Heite, C. and Schumacher, K. and Goser, K., year=2002, pages=289–292