U. Hilleringmann and K. Goser, “Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon,”10.1016/0167-9317(92)90425-q__Microelectronic Engineering, vol. 19, no. 1–4, pp. 211–214, 2002, doi:10.1016/0167-9317(92)90425-q .

E. Brass, U. Hilleringmann, and K. Schumacher, “System integration of optical devices and analog CMOS amplifiers,”10.1109/4.297714__IEEE Journal of Solid-State Circuits, vol. 29, no. 8, pp. 1006–1010, 2002, doi:10.1109/4.297714 .

E. Brass, U. Hilleringmann, and K. Schumacher, “System integration of optical devices and analog CMOS amplifiers,”10.1109/4.297714__IEEE Journal of Solid-State Circuits, vol. 29, no. 8, pp. 1006–1010, 2002, doi:10.1109/4.297714 .

J. T. Horstmann, U. Hilleringmann, and K. Goser, “Characterisation of sub-100 nm-MOS-transistors processed by optical lithography and a sidewall-etchback technique,”10.1016/0167-9317(95)00280-4__Microelectronic Engineering, vol. 30, no. 1–4, pp. 431–434, 2002, doi:10.1016/0167-9317(95)00280-4 .

K. Goser, U. Hilleringmann, U. Rueckert, and K. Schumacher, “VLSI technologies for artificial neural networks,”10.1109/40.42985__IEEE Micro, vol. 9, no. 6, pp. 28–44, 2002, doi:10.1109/40.42985 .

V. Mankowski, U. Hilleringmann, and K. Schumacher, “A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV,”10.1016/s0167-9317(00)00370-1__Microelectronic Engineering, vol. 53, no. 1–4, pp. 525–528, 2002, doi:10.1016/s0167-9317(00)00370-1 .

J. T. Horstmann, U. Hilleringmann, and K. Goser, “/f-Noise of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique,”10.1016/s0167-9317(00)00299-9__Microelectronic Engineering, vol. 53, no. 1–4, pp. 213–216, 2002, doi:10.1016/s0167-9317(00)00299-9 .

J. T. Horstmann, U. Hilleringmann, and K. Goser, “Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique,”10.1109/iecon.2000.972560__2002, doi:10.1109/iecon.2000.972560 .

J. T. Horstmann, U. Hilleringmann, and K. Goser, “Noise analysis of sub-100 nm-MOS-transistors fabricated by a special deposition and etchback technique,”10.1109/iecon.2000.972560__2002, doi:10.1109/iecon.2000.972560 .

U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, and K. Goser, “A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits,”10.1016/0167-9317(91)90231-2__Microelectronic Engineering, vol. 15, no. 1–4, pp. 289–292, 2002, doi:10.1016/0167-9317(91)90231-2 .

K. Goser, U. Hilleringmann, U. Rueckert, and K. Schumacher, “VLSI technologies for artificial neural networks,”10.1109/40.42985__IEEE Micro, vol. 9, no. 6, pp. 28–44, 2002, doi:10.1109/40.42985 .

F. Blum et al., “Nuclear radiation detectors on various type diamonds,”10.1109/iecon.1998.724097__2002, doi:10.1109/iecon.1998.724097 .

A. Soennecken, U. Hilleringmann, and K. Goser, “Floating gate structures as nonvolatile analog memory cells in 1.0;cm-LOCOS-CMOS technology with PZT dielectrica,”10.1016/0167-9317(91)90299-s__Microelectronic Engineering, vol. 15, no. 1–4, pp. 633–636, 2002, doi:10.1016/0167-9317(91)90299-s .

U. Hilleringmann and K. Goser, “Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon,”10.1016/0167-9317(92)90425-q__Microelectronic Engineering, vol. 19, no. 1–4, pp. 211–214, 2002, doi:10.1016/0167-9317(92)90425-q .

S. Adams, U. Hilleringmann, and K. Goser, “CMOS compatible micromachining by dry silicon-etching techniques,”10.1016/0167-9317(92)90420-v__Microelectronic Engineering, vol. 19, no. 1–4, pp. 191–194, 2002, doi:10.1016/0167-9317(92)90420-v .

J. T. Horstmann, U. Hilleringmann, and K. F. Goser, “Matching analysis of deposition defined 50-nm MOSFET’s,”10.1109/16.658845__IEEE Transactions on Electron Devices, vol. 45, no. 1, pp. 299–306, 2002, doi:10.1109/16.658845 .

K. Goser, U. Hilleringmann, and U. Rueckert, “Applications and implementations of neural networks in microelectronics-overview and status,”10.1109/cmpeur.1991.257442__2002, doi:10.1109/cmpeur.1991.257442 .

V. Mankowski, U. Hilleringmann, and K. Schumacher, “kV low current cascaded light triggered switch on one silicon chip,”10.1016/s0167-9317(99)00122-7__Microelectronic Engineering, vol. 46, no. 1–4, pp. 413–417, 2002, doi:10.1016/s0167-9317(99)00122-7 .

J. T. Horstmann, U. Hilleringmann, and K. F. Goser, “Matching analysis of deposition defined 50-nm MOSFET’s,”10.1109/16.658845__IEEE Transactions on Electron Devices, vol. 45, no. 1, pp. 299–306, 2002, doi:10.1109/16.658845 .

G. Wirth, U. Hilleringmann, J. T. Horstmann, and K. Goser, “Mesoscopic transport phenomena in ultrashort channel MOSFETs,”10.1016/s0038-1101(99)00060-x__Solid-State Electronics, vol. 43, no. 7, pp. 1245–1250, 2002, doi:10.1016/s0038-1101(99)00060-x .