D. Petrov, M. Schmidt, U. Hilleringmann, C. Hedayat, and T. Otto, “RFID based sensor platform for industry 4.0 application,” in Smart Systems Integration; 13th International Conference and Exhibition on Integration Issues of Miniaturized Systems, 2019, pp. 1–4.

U. Hilleringmann, Silizium-Halbleitertechnologie. Wiesbaden: Springer Fachmedien Wiesbaden, 2018.

U. Hilleringmann, “Ätztechnik,” in Silizium-Halbleitertechnologie, Wiesbaden: Springer Fachmedien Wiesbaden, 2018.

T. E. Becker, F. F. Vidor, G. I. Wirth, T. Meyers, J. Reker, and U. Hilleringmann, “Time domain electrical characterization in zinc oxide nanoparticle thin-film transistors,”10.1109/latw.2018.8349695__2018, doi:10.1109/latw.2018.8349695 .

T. E. Becker, F. F. Vidor, G. I. Wirth, T. Meyers, J. Reker, and U. Hilleringmann, “Time domain electrical characterization in zinc oxide nanoparticle thin-film transistors,”10.1109/latw.2018.8349695__2018, doi:10.1109/latw.2018.8349695 .

U. Hilleringmann, “Oxidation des Siliziums,” in Silizium-Halbleitertechnologie, Wiesbaden: Springer Fachmedien Wiesbaden, 2018.

J. Vollbrecht et al., “Liquid crystalline dithienothiophene derivatives for organic electronics,”10.1016/j.orgel.2018.06.002__Organic Electronics, vol. 61, pp. 266–275, 2018, doi:10.1016/j.orgel.2018.06.002 .

A. Kleine and U. Hilleringmann, “Surface Cleaning and Modification by High Intense UV-Irradition for TiO2 Nanoparticle Films in Dye Sensitized Solar Cells,”10.24084/repqj14.238__Renewable Energy and Power Quality Journal, pp. 102–107, 2017, doi:10.24084/repqj14.238 .

T. Meyers, F. F. Vidor, C. Puls, and U. Hilleringmann, “Low-voltage C 8 -BTBT thin-film transistors for flexible electronics,”10.1016/j.matpr.2017.09.192__Materials Today: Proceedings, vol. 4, pp. 2–6, 2017, doi:10.1016/j.matpr.2017.09.192 .

F. F. Vidor, G. I. Wirth, and U. Hilleringmann, “Zinc Oxide Transistors,” in ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics, Cham: Springer International Publishing, 2017.

J. Reker, T. Meyers, F. F. Vidor, and U. Hilleringmann, “Deposition of ZnO nanoparticles for thin-film transistors by doctor blade process,”10.1109/afrcon.2017.8095556__2017, doi:10.1109/afrcon.2017.8095556 .

S. C. S. Jucá, P. C. M. Carvalho, R. I. S. Pereira, D. Petrov, and U. Hilleringmann, “Design and Implementation of a High Temperature Control Monitoring Applied to Micro Thermoelectric Generators,”10.24084/repqj11.425__Renewable Energy and Power Quality Journal, pp. 712–717, 2017, doi:10.24084/repqj11.425 .

B. Ohms, A. Kleine, and U. Hilleringmann, “Increasing the Efficiency of Solar Cells by Combining Silicon- and Dye Sensitized Devices,”10.24084/repqj10.349__Renewable Energy and Power Quality, pp. 469–473, 2017, doi:10.24084/repqj10.349 .

F. F. Vidor, G. I. Wirth, T. Meyers, J. Reker, and U. Hilleringmann, “Self-aligned ZnO nanoparticle-based TFTs for flexible electronics,”10.1109/afrcon.2017.8095558__2017, doi:10.1109/afrcon.2017.8095558 .

F. F. Vidor, G. I. Wirth, and U. Hilleringmann, “Conclusion and Future Perspectives,” in ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics, Cham: Springer International Publishing, 2017.

M. Schönhoff and U. Hilleringmann, “TEGs as self-sufficient power supply for sensors and microelectromechanical systems,”10.1117/12.2243133__in SPIE Proceedings, 2017, doi:10.1117/12.2243133 .

U. Hilleringmann, F. F. Vidor, and T. Meyers, “Complementary field-effect transistors for flexible electronics,”10.1117/12.2243001__in SPIE Proceedings, 2017, doi:10.1117/12.2243001 .

M. Schonhoff, U. Hilleringmann, and J. de Boor, “Mass production of magnesium silicide as a TEG material,”10.1109/afrcon.2017.8095620__2017, doi:10.1109/afrcon.2017.8095620 .

F. F. Vidor, G. I. Wirth, and U. Hilleringmann, ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics. Cham: Springer International Publishing, 2017.

F. F. Vidor, T. Meyers, K. Müller, G. I. Wirth, and U. Hilleringmann, “Inverter circuits on freestanding flexible substrate using ZnO nanoparticles for cost-efficient electronics,”10.1016/j.sse.2017.07.011__Solid-State Electronics, vol. 137, pp. 16–21, 2017, doi:10.1016/j.sse.2017.07.011 .