A. Schindlmayr, T. J. Pollehn, and R. W. Godby, “Spectra and total energies from self-consistent many-body perturbation theory,”10.1103/PhysRevB.58.12684__Physical Review B, vol. 58, no. 19, pp. 12684–12690, 1998, doi:10.1103/PhysRevB.58.12684 .

U. Grossner, W. G. Schmidt, and F. Bechstedt, “As on InP(110) studied within density-functional theory,” Physical Review B, vol. 56, no. 11, pp. 6719–6726, 1997.

W. G. Schmidt and F. Bechstedt, “Antimony-stabilized GaAs(001)(2×4) reconstructions,” Physical Review B, vol. 55, no. 19, pp. 13051–13057, 1997.

A. Schindlmayr, “Violation of particle number conservation in the GW approximation,”10.1103/PhysRevB.56.3528__Physical Review B, vol. 56, no. 7, pp. 3528–3531, 1997, doi:10.1103/PhysRevB.56.3528 .

W. G. Schmidt and F. Bechstedt, “Geometry and electronic structure of GaAs(001)(2×4) reconstructions,” Physical Review B, vol. 54, no. 23, pp. 16742–16748, 1996.

A. Scholze, W. G. Schmidt, and F. Bechstedt, “Structure of the diamond (111) surface: Single-dangling-bond versus triple-dangling-bond face,” Physical Review B, vol. 53, no. 20, pp. 13725–13733, 1996.

P. V. Santos, N. Esser, J. Groenen, M. Cardona, W. G. Schmidt, and F. Bechstedt, “Hydrogen interaction with Sb-terminated GaAs and InP (110) surfaces,” Physical Review B, vol. 52, no. 24, pp. 17379–17385, 1995.

P. V. Santos, N. Esser, M. Cardona, W. G. Schmidt, and F. Bechstedt, “Optical properties of Sb-terminated GaAs and InP (110) surfaces,” Physical Review B, vol. 52, no. 16, pp. 12158–12167, 1995.

W. G. Schmidt, F. Bechstedt, and G. P. Srivastava, “III-V(110) surface dynamics from anab initiofrozen-phonon approach,” Physical Review B, vol. 52, no. 3, pp. 2001–2007, 1995.

C. Kress, M. Fiedler, W. G. Schmidt, and F. Bechstedt, “Geometrical and electronic structure of the reconstructed diamond (100) surface,” Physical Review B, vol. 50, no. 23, pp. 17697–17700, 1995.

W. G. Schmidt and F. Bechstedt, “Exchange reactions versus adsorption geometries for Se/GaAs(110),” Physical Review B, vol. 50, no. 23, pp. 17651–17654, 1995.

W. G. Schmidt and F. Bechstedt, “Se/GaAs(110): Atomic and electronic structure,” Physical Review B, vol. 50, no. 23, pp. 17280–17291, 1995.

A. Schindlmayr and R. W. Godby, “Density-functional theory and the v-representability problem for model strongly correlated electron systems,”10.1103/PhysRevB.51.10427__Physical Review B, vol. 51, no. 16, pp. 10427–10435, 1995, doi:10.1103/PhysRevB.51.10427 .

W. G. Schmidt, B. Wenzien, and F. Bechstedt, “Chemisorption of antimony on GaAs(110),” Physical Review B, vol. 49, no. 7, pp. 4731–4744, 1994.