P. H. Hahn, W. G. Schmidt, and F. Bechstedt, “Molecular electronic excitations calculated from a solid-state approach: Methodology and numerics,” Physical Review B, vol. 72, no. 24, 2006.

F. Ortmann, F. Bechstedt, and W. G. Schmidt, “Semiempirical van der Waals correction to the density functional description of solids and molecular structures,” Physical Review B, vol. 73, no. 20, 2006.

C. Friedrich, A. Schindlmayr, S. Blügel, and T. Kotani, “Elimination of the linearization error in GW calculations based on the linearized augmented-plane-wave method,”10.1103/physrevb.74.045104__Physical Review B, vol. 74, no. 4, Art. no. 045104, 2006, doi:10.1103/physrevb.74.045104 .

H. T. Duc, Q. T. Vu, T. Meier, H. Haug, and S. W. Koch, “Temporal decay of coherently optically injected charge and spin currents due to carrier–LO-phonon and carrier-carrier scattering,”10.1103/physrevb.74.165328__Physical Review B, vol. 74, no. 16, Art. no. 165328, 2006, doi:10.1103/physrevb.74.165328 .

V. Höink et al., “Thermal stability of magnetic nanostructures in ion-bombardment-modified exchange-bias systems,”10.1103/physrevb.73.224428__Physical Review B, vol. 73, no. 22, Art. no. 224428, 2006, doi:10.1103/physrevb.73.224428 .

P. Borri, W. Langbein, U. Woggon, V. Stavarache, D. Reuter, and A. D. Wieck, “Exciton dephasing via phonon interactions in InAs quantum dots: Dependence on quantum confinement,” Physical Review B, 2005.

S. Pfalz et al., “Optical orientation of electron spins in GaAs quantum wells,” Physical Review B, 2005.

S. Butscher, J. Förstner, I. Waldmüller, and A. Knorr, “Ultrafast electron-phonon interaction of intersubband transitions: Quantum kinetics from adiabatic following to Rabi-oscillations,” Physical Review B, vol. 72, no. 4, pp. 045314-045314–4, 2005.

A. Zeiser, N. Bücking, J. Förstner, and A. Knorr, “Microscopic theory of electron dynamics and time-resolved two-color two-photon photoemission at semiconductor surfaces,” Physical Review B, vol. 71, no. 24, 2005.

K. J. Ahn, J. Förstner, and A. Knorr, “Resonance fluorescence of semiconductor quantum dots: Signatures of the electron-phonon interaction,” Physical Review B, vol. 71, no. 15, 2005.

S. Schumacher et al., “Polariton propagation in shallow-confinement heterostructures: Microscopic theory and experiment showing the breakdown of the dead-layer concept,” Physical Review B, 2005.

S. Schumacher et al., “Coherent propagation of polaritons in semiconductor heterostructures: Nonlinear pulse transmission in theory and experiment,” Physical Review B, 2005.

F. Bechstedt, K. Seino, P. H. Hahn, and W. G. Schmidt, “Quasiparticle bands and optical spectra of highly ionic crystals: AlN and NaCl,” Physical Review B, vol. 72, no. 24, 2005.

F. Fuchs, W. G. Schmidt, and F. Bechstedt, “Understanding the optical anisotropy of oxidized Si(001) surfaces,” Physical Review B, vol. 72, no. 7, 2005.

R. Leitsmann, W. G. Schmidt, P. H. Hahn, and F. Bechstedt, “Second-harmonic polarizability including electron-hole attraction from band-structure theory,” Physical Review B, vol. 71, 2005.

A. Hermann, W. G. Schmidt, and F. Bechstedt, “Optical response of<0-conjugated molecular monolayer adsorbed on the semiconductor Si(001) surface: A first-principles study,” Physical Review B, vol. 71, 2005.

P. H. Hahn, W. G. Schmidt, and F. Bechstedt, “Molecular electronic excitations calculated from a solid-state approach: Methodology and numerics,” Physical Review B, vol. 72, no. 24, 2005.

B. Pasenow, M. Reichelt, T. Stroucken, T. Meier, and S. W. Koch, “Excitonic wave packet dynamics in semiconductor photonic-crystal structures,”10.1103/physrevb.71.195321__Physical Review B, vol. 71, no. 19, p. 195321, 2005, doi:10.1103/physrevb.71.195321 .

R. Oszwadowski, M. Reichelt, T. Meier, S. W. Koch, and M. Rohlfing, “Nonlinear optical response of the  Si ( 111 )10.1103/physrevb.71.235324__( 2 × 1 )  surface exciton: Influence of biexciton many-body correlations,”10.1103/physrevb.71.235324__Physical Review B, vol. 71, no. 23, 2005, doi:10.1103/physrevb.71.235324 .

K. Hantke et al., “Time-resolved photoluminescence of type-I and type-II  (GaIn) As/Ga (NAs)  heterostructures,”10.1103/physrevb.71.165320__Physical Review B, vol. 71, no. 16, Art. no. 165320, 2005, doi:10.1103/physrevb.71.165320 .