Y.-S. Choi et al., “GaN blue photonic crystal membrane nanocavities,” Applied Physics Letters, vol. 87, no. 24, 2005.

S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, and A. D. Wieck, “Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra,” Applied Physics Letters, vol. 87, no. 16, 2005.

A. David et al., “Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction,” Applied Physics Letters, vol. 87, no. 10, 2005.

R. Sharma, E. D. Haberer, C. Meier, E. L. Hu, and S. Nakamura, “Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching,” Applied Physics Letters, vol. 87, no. 5, 2005.

A. Chakraborty et al., “Properties of nonpolar a-plane InGaNGaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN,” Applied Physics Letters, vol. 86, no. 3, 2005.

D. Reuter, C. Werner, A. D. Wieck, and S. Petrosyan, “Depletion characteristics of two-dimensional lateral pn-junctions,” Applied Physics Letters, 2005.

T. Müller, A. Würtz, A. Lorke, D. Reuter, and A. D. Wieck, “Wave-form sampling using a driven electron ratchet in a two-dimensional electron system,” Applied Physics Letters, 2005.

N. C. Gerhardt et al., “Electron spin injection into GaAs from ferromagnetic contacts in remanence,” Applied Physics Letters, 2005.

S. Lüttjohann, C. Meier, A. Lorke, D. Reuter, and A. D. Wieck, “Screening effects in InAs quantum-dot structures observed by photoluminescence and capacitance-voltage spectra,” Applied Physics Letters, 2005.

B. Grbi, R. Leturcq, K. Ensslin, D. Reuter, and A. D. Wieck, “Single-hole transistor in p-type GaAsAlGaAs heterostructures,” Applied Physics Letters, 2005.

H. Matthias, T. Röder, R. B. Wehrspohn, H.-S. Kitzerow, S. Matthias, and S. J. Picken, “Spatially periodic liquid crystal director field appearing in a photonic crystal template,”10.1063/1.2142100__Applied Physics Letters, vol. 87, no. 24, Art. no. 241105, 2005, doi:10.1063/1.2142100 .

G. Mertens, R. B. Wehrspohn, H.-S. Kitzerow, S. Matthias, C. Jamois, and U. Gösele, “Tunable defect mode in a three-dimensional photonic crystal,”10.1063/1.2139846__Applied Physics Letters, vol. 87, no. 24, Art. no. 241108, 2005, doi:10.1063/1.2139846 .

L. Paelke, H.-S. Kitzerow, and P. Strohriegl, “Photorefractive polymer-dispersed liquid crystal based on a photoconducting polysiloxane,”10.1063/1.1852082__Applied Physics Letters, vol. 86, no. 3, Art. no. 031104, 2005, doi:10.1063/1.1852082 .

C. Schlichenmaier et al., “Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range,”10.1063/1.2149371__Applied Physics Letters, vol. 87, no. 26, Art. no. 261109, 2005, doi:10.1063/1.2149371 .

M. Scharnberg et al., “Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics,”10.1063/1.1849845__Applied Physics Letters, vol. 86, no. 2, Art. no. 024104, 2005, doi:10.1063/1.1849845 .

V. Höink et al., “Postannealing of magnetic tunnel junctions with ion-bombardment-modified exchange bias,”10.1063/1.1899771__Applied Physics Letters, vol. 86, no. 15, Art. no. 152102, 2005, doi:10.1063/1.1899771 .

E. D. Haberer et al., “Free-standing, optically pumped, GaNInGaN microdisk lasers fabricated by photoelectrochemical etching,” Applied Physics Letters, vol. 85, no. 22, pp. 5179–5181, 2004.

S. Petrosyan, A. Yesayan, D. Reuter, and A. D. Wieck, “The linearly graded two-dimensional p–n junction,” Applied Physics Letters, pp. 3313–3315, 2004.

B. Grbi, C. Ellenberger, T. Ihn, K. Ensslin, D. Reuter, and A. D. Wieck, “Magnetotransport in C-doped AlGaAs heterostructures,” Applied Physics Letters, pp. 2277–2279, 2004.

A. Thränhardt et al., “Nonequilibrium gain in optically pumped GaInNAs laser structures,”10.1063/1.1831570__Applied Physics Letters, vol. 85, no. 23, pp. 5526–5528, 2004, doi:10.1063/1.1831570 .