Review Hagengruber Le Ru Émilie Du Châtelet Philosophe 
R. Hagengruber, H-France Net 158 (2020).

InAs heteroepitaxy on nanopillar-patterned GaAs (111)A
V.S. Kunnathully, T. Riedl, A. Trapp, T. Langer, D. Reuter, J. Lindner, Journal of Crystal Growth 537 (2020).

Informationskompetenz durch E-Learning? Durch Lernvideos nach Literatur suchen
C.A. Hahn, die hochschullehre (2020).

Rezension zu: Bernardo Bátiz-Lazo: Cash and Dash. How ATMs and Computers Changed Banking
M. Schmitt, Vierteljahrschrift Für Sozial- Und Wirtschaftsgeschichte 107 (2020) 541–543.

Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1f1f1)B
T. Henksmeier, S. Shvarkov, A. Trapp, D. Reuter, Journal of Crystal Growth 512 (2019) 164–168.

Narratives of Vicarious Experience in Oral History Interviews with Craft Artists
J. Mildorf, Journal of Pragmatics 152 (2019) 103–112.

Model-driven allocation engineering: specifying and solving constraints based on the example of automotive systems
U. Pohlmann, M. Hüwe, Automated Software Engineering (2018).

Linear and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi quantum well structures
T. Wecker, T. Jostmeier, T. Rieger, E. Neumann, A. Pawlis, M. Betz, D. Reuter, D.J. As, Journal of Crystal Growth 477 (2017) 149–153.

Overcoming Ehrlich-Schwöbel barrier in (1f1f1)A GaAs molecular beam epitaxy
J. Ritzmann, R. Schott, K. Gross, D. Reuter, A. Ludwig, A.D. Wieck, Journal of Crystal Growth 481 (2017) 7–10.

Focused ion beam supported growth of monocrystalline wurtzite InAs nanowires grown by molecular beam epitaxy
S. Scholz, R. Schott, P.A. Labud, C. Somsen, D. Reuter, A. Ludwig, A.D. Wieck, Journal of Crystal Growth 470 (2017) 46–50.