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@articleHao_Zhu_Häberlen_Chang_Kappers_Oliver_Humphreys_Moram_2010, title=The effects of annealing on non-polar (112¯0) a-plane GaN films, volume=312, DOI=10.1016/j.jcrysgro.2010.08.041, number=23, journal=Journal of Crystal Growth, publisher=Elsevier BV, author=Hao, Rui and Zhu, T. and Häberlen, M. and Chang, T.Y. and Kappers, M.J. and Oliver, R.A. and Humphreys, C.J. and Moram, M.A., year=2010, pages=3536–3543 
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@articleRauls_Wiebe_Schmidt_2010, title=Understanding the cubic AlN growth plane from first principles, volume=312, DOI=10.1016/j.jcrysgro.2010.07.027, journal=Journal of Crystal Growth, author=Rauls, E. and Wiebe, J. and Schmidt, Wolf Gero, year=2010, pages=2892–2895 
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@articleHäberlen_Gerlach_Murphy_Lindner_Stritzker_2009, title=Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si, volume=312, DOI=10.1016/j.jcrysgro.2009.12.048, number=6, journal=Journal of Crystal Growth, publisher=Elsevier BV, author=Häberlen, M. and Gerlach, J.W. and Murphy, B. and Lindner, Jörg and Stritzker, B., year=2009, pages=762–769 
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@articleYang_Reuter_Wieck_2006, title=Sticking behavior of the dopants Si, C, and Be upon re-evaporation of individually doped GaAs(100), DOI=10.1016/j.jcrysgro.2006.05.051, journal=Journal of Crystal Growth, author=Yang, J.L. and Reuter, Dirk and Wieck, A.D., year=2006, pages=278–284 
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