Review Hagengruber Le Ru Émilie Du Châtelet Philosophe 
R. Hagengruber, H-France Net 158 (2020).
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Informationskompetenz durch E-Learning? Durch Lernvideos nach Literatur suchen
C.A. Hahn, die hochschullehre (2020).
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Rezension zu: Bernardo Bátiz-Lazo: Cash and Dash. How ATMs and Computers Changed Banking
M. Schmitt, Vierteljahrschrift Für Sozial- Und Wirtschaftsgeschichte 107 (2020) 541–543.
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High-precision determination of silicon nanocrystals: optical spectroscopy versus electron microscopy
R. Köthemann, N. Weber, J.K.N. Lindner, C. Meier, Semiconductor Science and Technology 34 (2019).
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Narratives of Vicarious Experience in Oral History Interviews with Craft Artists
J. Mildorf, Journal of Pragmatics 152 (2019) 103–112.
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Structural, electronic and phononic properties of PtSe2: from monolayer to bulk
A. Kandemir, B. Akbali, Z. Kahraman, S.V. Badalov, M. Ozcan, F. Iyikanat, H. Sahin, Semiconductor Science and Technology (2018).
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Interlayer charge transfer in n-modulation doped Al1x Ga x As–GaAs single heterostructures
J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology 33 (2018).
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Zwischen Wissenschaft und Lebenswelt. Entwicklung, Stand und Zukunftsperspektiven haushaltsbezogener Bildung.
K. Schlegel-Matthies, Zwischen Wissenschaft und Lebenswelt. Entwicklung, Stand und Zukunftsperspektiven haushaltsbezogener Bildung., 2016.
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Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures
J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology 28 (2013).
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On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGxAs heterostructures
E.J. Koop, M.J. Iqbal, F. Limbach, M. Boute, B.J. van Wees, D. Reuter, A.D. Wieck, B.J. Kooi, C.H. van der Wal, Semiconductor Science and Technology 28 (2013).
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In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy
V. Wiedemeier, G. Berth, A. Zrenner, E.M. Larramendi, U. Woggon, K. Lischka, D. Schikora, Semiconductor Science and Technology 26 (2011).
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Application of the discontinous Galerkin time domain method to the optics of metallic nanostructures
Y. Grynko, J. Förstner, T. Meier, AAPP | Atti Della Accademia Peloritana Dei Pericolanti 89 (2011).
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Como podemos definir vigilância?
C. Fuchs, MATRIZes 5 (2011) 109–133.
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Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers
E.M. Larramendi, G. Berth, V. Wiedemeier, K.-P. Hüsch, A. Zrenner, U. Woggon, E. Tschumak, K. Lischka, D. Schikora, Semiconductor Science and Technology 25 (2010).
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Mischbauweise sorgt für frischen Wind
G. Meschut, Konstruktion 04 (2005) 92–93.
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Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene
M. Knop, M. Richter, R. Maßmann, U. Wieser, U. Kunze, D. Reuter, C. Riedesel, A.D. Wieck, Semiconductor Science and Technology (2005) 814–818.
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DOI: 10.1088/0268-1242/20/8/031

Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation
D. Kähler, M. Knop, U. Kunze, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2004) 140–143.
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Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope
G. Apetrii, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2003) 735–739.
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Lipirea în combinatie cu îmbinarile obtinute prin deformare
O. Hahn, M. Koyro, G. Meschut, Sudura 2 (2002) 10–13.
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Local two-dimensional electron gas formation in p-doped GaAs/InyG yAs/AlxG xAs heterostructures by focused Si-implantation doping
D. Reuter, C. Meier, C. Riedesel, A.D. Wieck, Semiconductor Science and Technology 17 (2002) 585–589.
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