In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy
V. Wiedemeier, G. Berth, A. Zrenner, E.M. Larramendi, U. Woggon, K. Lischka, D. Schikora, Semiconductor Science and Technology 26 (2011).
LibreCat: /record/4545
DOI: 10.1088/0268-1242/26/10/105023

Application of the discontinous Galerkin time domain method to the optics of metallic nanostructures
Y. Grynko, J. Förstner, T. Meier, AAPP | Atti Della Accademia Peloritana Dei Pericolanti 89 (2011).
LibreCat: /record/4044
DOI: 10.1478/C1V89S1P041

Como podemos definir vigilância?
C. Fuchs, MATRIZes 5 (2011) 109–133.
LibreCat: /record/42728
DOI: https://doi.org/10.11606/issn.1982-8160.v5i1p109-136

Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers
E.M. Larramendi, G. Berth, V. Wiedemeier, K.-P. Hüsch, A. Zrenner, U. Woggon, E. Tschumak, K. Lischka, D. Schikora, Semiconductor Science and Technology 25 (2010).
LibreCat: /record/4549
DOI: 10.1088/0268-1242/25/7/075003

Mischbauweise sorgt für frischen Wind
G. Meschut, Konstruktion 04 (2005) 92–93.
LibreCat: /record/21219

Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene
M. Knop, M. Richter, R. Maßmann, U. Wieser, U. Kunze, D. Reuter, C. Riedesel, A.D. Wieck, Semiconductor Science and Technology (2005) 814–818.
LibreCat: /record/8693
DOI: 10.1088/0268-1242/20/8/031

Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation
D. Kähler, M. Knop, U. Kunze, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2004) 140–143.
LibreCat: /record/8692
DOI: 10.1088/0268-1242/20/2/006

Influence of processing parameters on the transport properties of quantum point contacts fabricated with an atomic force microscope
G. Apetrii, S.F. Fischer, U. Kunze, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2003) 735–739.
LibreCat: /record/8730
DOI: 10.1088/0268-1242/17/7/317

Lipirea în combinatie cu îmbinarile obtinute prin deformare
O. Hahn, M. Koyro, G. Meschut, Sudura 2 (2002) 10–13.
LibreCat: /record/21050

Local two-dimensional electron gas formation in p-doped GaAs/InyG yAs/AlxG xAs heterostructures by focused Si-implantation doping
D. Reuter, C. Meier, C. Riedesel, A.D. Wieck, Semiconductor Science and Technology 17 (2002) 585–589.
LibreCat: /record/7684
DOI: 10.1088/0268-1242/17/6/315

Layer-compensated selectively doped AlxG-xAs/GaAs heterostructures as a base material for nanolithography
D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology (2002) 603–607.
LibreCat: /record/8747
DOI: 10.1088/0268-1242/16/7/314

Layer-compensated selectively doped AlxG-xAs/GaAs heterostructures as a base material for nanolithography
D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology (2002) 603–607.
LibreCat: /record/8768
DOI: 10.1088/0268-1242/16/7/314

Hybridfügen – Grundlagen, Technologie, Anwendungen
G. Meschut, in: DVM-Bericht 668, Berlin, 2001, pp. 119–134.
LibreCat: /record/21009

Medienbildung und Gesellschaft
J. Fromme, S. Ganguin, S. Iske, D.M. Meister, U. Sander, eds., Medienbildung und Gesellschaft, VS Verlag, 2000.
LibreCat: /record/18121

Eine quasistationäre Meßmethode zur Ermittlung der Wärmeleitfähigkeit polymerer Zwischenschichten in Abhängigkeit von der Temperatur
M. Koyro, G. Meschut, in: Tagungsband Zur Veranstaltung Werkstoffprüfung 1999, 1999, pp. 173–184.
LibreCat: /record/20992

Coherent Dynamics of Exciton Wavepackets in Semiconductor Heterostructures
T. Meier, M. Koch, J. Feldmann, E.O. Göbel, F. Jahnke, W. Schäfer, P. Thomas, S.W. Koch, H. Nickel, S. Luttgen, W. Stolz, in: Proceedings Der 8. International Winterschool on New Developments in Physics, IOP Publishing, 1994, pp. 1965–1971.
LibreCat: /record/43450
DOI: 10.1088/0268-1242/9/11S/018