Wiedemeier, V., et al. “In Situ Characterization of ZnTe Epilayer Irradiation via Time-Resolved and Power-Density-Dependent Raman Spectroscopy.”10.1088/0268-1242/26/10/105023__Semiconductor Science and Technology, vol. 26, no. 10, 105023, IOP Publishing, 2011, doi:10.1088/0268-1242/26/10/105023.
LibreCat: /record/4545
DOI: 10.1088/0268-1242/26/10/105023

Fuchs, Christian. “Como podemos definir vigilância?”https://doi.org/10.11606/issn.1982-8160.v5i1p109-136__MATRIZes, vol. 5, no. 1, 2011, pp. 109–33, doi:https://doi.org/10.11606/issn.1982-8160.v5i1p109-136.
LibreCat: /record/42728
DOI: https://doi.org/10.11606/issn.1982-8160.v5i1p109-136

Larramendi, E. M., et al. “Intensity Enhancement of Te Raman Modes by Laser Damage in ZnTe Epilayers.”10.1088/0268-1242/25/7/075003__Semiconductor Science and Technology, vol. 25, no. 7, 075003, IOP Publishing, 2010, doi:10.1088/0268-1242/25/7/075003.
LibreCat: /record/4549
DOI: 10.1088/0268-1242/25/7/075003

Meschut, Gerson. “Mischbauweise Sorgt Für Frischen Wind.” Konstruktion, vol. 04, 2005, pp. 92–93.
LibreCat: /record/21219

Knop, M., et al. “Preparation of Electron Waveguide Devices on GaAs/AlGaAs Using Negative-Tone Resist Calixarene.”10.1088/0268-1242/20/8/031__Semiconductor Science and Technology, 2005, pp. 814–18, doi:10.1088/0268-1242/20/8/031.
LibreCat: /record/8693
DOI: 10.1088/0268-1242/20/8/031

Kähler, D., et al. “Dual-Gate GaAs/AlGaAs Quantum Point Contact with Tuneable Subband Energy Separation.”10.1088/0268-1242/20/2/006__Semiconductor Science and Technology, 2004, pp. 140–43, doi:10.1088/0268-1242/20/2/006.
LibreCat: /record/8692
DOI: 10.1088/0268-1242/20/2/006

Hahn, O., et al. “Lipirea În Combinatie Cu Îmbinarile Obtinute Prin Deformare.” Sudura, vol. 2, 2002, pp. 10–13.
LibreCat: /record/21050

Reuter, Dirk, et al. “Layer-Compensated Selectively Doped AlxG-XAs/GaAs Heterostructures as a Base Material for Nanolithography.”10.1088/0268-1242/16/7/314__Semiconductor Science and Technology, 2002, pp. 603–07, doi:10.1088/0268-1242/16/7/314.
LibreCat: /record/8747
DOI: 10.1088/0268-1242/16/7/314

Reuter, Dirk, et al. “Layer-Compensated Selectively Doped AlxG-XAs/GaAs Heterostructures as a Base Material for Nanolithography.”10.1088/0268-1242/16/7/314__Semiconductor Science and Technology, 2002, pp. 603–07, doi:10.1088/0268-1242/16/7/314.
LibreCat: /record/8768
DOI: 10.1088/0268-1242/16/7/314

Meschut, Gerson. “Hybridfügen – Grundlagen, Technologie, Anwendungen.” DVM-Bericht 668, vol. 668, 2001, pp. 119–34.
LibreCat: /record/21009

Fromme, J., et al., editors. Medienbildung und Gesellschaft. VS Verlag, 2000.
LibreCat: /record/18121

Koyro, M., and Gerson Meschut. “Eine Quasistationäre Meßmethode Zur Ermittlung Der Wärmeleitfähigkeit Polymerer Zwischenschichten in Abhängigkeit von Der Temperatur.” Tagungsband Zur Veranstaltung Werkstoffprüfung 1999, 1999, pp. 173–84.
LibreCat: /record/20992