Review Hagengruber Le Ru Émilie Du Châtelet Philosophe 
R. Hagengruber, H-France Net 158 (2020).
LibreCat: /record/21294

Informationskompetenz durch E-Learning? Durch Lernvideos nach Literatur suchen
C.A. Hahn, die hochschullehre (2020).
LibreCat: /record/33299

Rezension zu: Bernardo Bátiz-Lazo: Cash and Dash. How ATMs and Computers Changed Banking
M. Schmitt, Vierteljahrschrift Für Sozial- Und Wirtschaftsgeschichte 107 (2020) 541–543.
LibreCat: /record/51816

High-precision determination of silicon nanocrystals: optical spectroscopy versus electron microscopy
R. Köthemann, N. Weber, J.K.N. Lindner, C. Meier, Semiconductor Science and Technology 34 (2019).
LibreCat: /record/12930
DOI: 10.1088/1361-6641/ab3536

Narratives of Vicarious Experience in Oral History Interviews with Craft Artists
J. Mildorf, Journal of Pragmatics 152 (2019) 103–112.
LibreCat: /record/18125

Structural, electronic and phononic properties of PtSe2: from monolayer to bulk
A. Kandemir, B. Akbali, Z. Kahraman, S.V. Badalov, M. Ozcan, F. Iyikanat, H. Sahin, Semiconductor Science and Technology (2018).
LibreCat: /record/19215
DOI: 10.1088/1361-6641/aacba2

Interlayer charge transfer in n-modulation doped Al1x Ga x As–GaAs single heterostructures
J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology 33 (2018).
LibreCat: /record/7009
DOI: 10.1088/1361-6641/aad83d

Zwischen Wissenschaft und Lebenswelt. Entwicklung, Stand und Zukunftsperspektiven haushaltsbezogener Bildung.
K. Schlegel-Matthies, Zwischen Wissenschaft und Lebenswelt. Entwicklung, Stand und Zukunftsperspektiven haushaltsbezogener Bildung., 2016.
LibreCat: /record/27390

Influence of recombination center interaction on the photoluminescence of AlGaAs/GaAs heterostructures
J. Schuster, T.Y. Kim, E. Batke, D. Reuter, A.D. Wieck, Semiconductor Science and Technology 28 (2013).
LibreCat: /record/7282
DOI: 10.1088/0268-1242/28/8/085012

On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlxGxAs heterostructures
E.J. Koop, M.J. Iqbal, F. Limbach, M. Boute, B.J. van Wees, D. Reuter, A.D. Wieck, B.J. Kooi, C.H. van der Wal, Semiconductor Science and Technology 28 (2013).
LibreCat: /record/7295
DOI: 10.1088/0268-1242/28/2/025006

In situ characterization of ZnTe epilayer irradiation via time-resolved and power-density-dependent Raman spectroscopy
V. Wiedemeier, G. Berth, A. Zrenner, E.M. Larramendi, U. Woggon, K. Lischka, D. Schikora, Semiconductor Science and Technology 26 (2011).
LibreCat: /record/4545
DOI: 10.1088/0268-1242/26/10/105023

Como podemos definir vigilância?
C. Fuchs, MATRIZes 5 (2011) 109–133.
LibreCat: /record/42728
DOI: https://doi.org/10.11606/issn.1982-8160.v5i1p109-136

Intensity enhancement of Te Raman modes by laser damage in ZnTe epilayers
E.M. Larramendi, G. Berth, V. Wiedemeier, K.-P. Hüsch, A. Zrenner, U. Woggon, E. Tschumak, K. Lischka, D. Schikora, Semiconductor Science and Technology 25 (2010).
LibreCat: /record/4549
DOI: 10.1088/0268-1242/25/7/075003

Mischbauweise sorgt für frischen Wind
G. Meschut, Konstruktion 04 (2005) 92–93.
LibreCat: /record/21219

Preparation of electron waveguide devices on GaAs/AlGaAs using negative-tone resist calixarene
M. Knop, M. Richter, R. Maßmann, U. Wieser, U. Kunze, D. Reuter, C. Riedesel, A.D. Wieck, Semiconductor Science and Technology (2005) 814–818.
LibreCat: /record/8693
DOI: 10.1088/0268-1242/20/8/031

Dual-gate GaAs/AlGaAs quantum point contact with tuneable subband energy separation
D. Kähler, M. Knop, U. Kunze, D. Reuter, A.D. Wieck, Semiconductor Science and Technology (2004) 140–143.
LibreCat: /record/8692
DOI: 10.1088/0268-1242/20/2/006

Lipirea în combinatie cu îmbinarile obtinute prin deformare
O. Hahn, M. Koyro, G. Meschut, Sudura 2 (2002) 10–13.
LibreCat: /record/21050

Layer-compensated selectively doped AlxG-xAs/GaAs heterostructures as a base material for nanolithography
D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology (2002) 603–607.
LibreCat: /record/8747
DOI: 10.1088/0268-1242/16/7/314

Layer-compensated selectively doped AlxG-xAs/GaAs heterostructures as a base material for nanolithography
D. Reuter, D. Kähler, U. Kunze, A.D. Wieck, Semiconductor Science and Technology (2002) 603–607.
LibreCat: /record/8768
DOI: 10.1088/0268-1242/16/7/314

Hybridfügen – Grundlagen, Technologie, Anwendungen
G. Meschut, in: DVM-Bericht 668, Berlin, 2001, pp. 119–134.
LibreCat: /record/21009

Medienbildung und Gesellschaft
J. Fromme, S. Ganguin, S. Iske, D.M. Meister, U. Sander, eds., Medienbildung und Gesellschaft, VS Verlag, 2000.
LibreCat: /record/18121

Eine quasistationäre Meßmethode zur Ermittlung der Wärmeleitfähigkeit polymerer Zwischenschichten in Abhängigkeit von der Temperatur
M. Koyro, G. Meschut, in: Tagungsband Zur Veranstaltung Werkstoffprüfung 1999, 1999, pp. 173–184.
LibreCat: /record/20992