Schwan A, Varwig S, Greilich A, et al. Non-resonant optical excitation of mode-locked electron spin coherence in (In,Ga)As/GaAs quantum dot ensemble. Applied Physics Letters. 2012;100(23). doi:10.1063/1.4726264

Huang J, Chen YS, Ludwig A, Reuter D, Wieck AD, Bacher G. Electron-nuclei spin coupling in GaAs—Free versus localized electrons. Applied Physics Letters. 2012;100(13). doi:10.1063/1.3699261

Chen JCH, Wang DQ, Klochan O, et al. Fabrication and characterization of ambipolar devices on an undoped AlGaAs/GaAs heterostructure. Applied Physics Letters. 2012;100(5). doi:10.1063/1.3673837

Kröger P, Ruth M, Weber N, Meier C. Carrier localization in ZnO quantum wires. Applied Physics Letters. 2012;100(26). doi:10.1063/1.4731767

Ehiasarian AP, Hecimovic A, de los Arcos de Pedro MT, et al. High power impulse magnetron sputtering discharges: Instabilities and plasma self-organization. Applied Physics Letters. Published online 2012. doi:10.1063/1.3692172

Atorf B, Hoischen A, Ros MB, et al. Switching performance of a polymer-stabilized antiferroelectric liquid crystal based on bent-core molecules. Applied Physics Letters. 2012;100(22). doi:10.1063/1.4722794

Schmidtke J, Jünnemann G, Keuker-Baumann S, Kitzerow H-S. Electrical fine tuning of liquid crystal lasers. Applied Physics Letters. 2012;101(5). doi:10.1063/1.4739840

Marquardt B, Beckel A, Lorke A, Wieck AD, Reuter D, Geller M. The influence of charged InAs quantum dots on the conductance of a two-dimensional electron gas: Mobility vs. carrier concentration. Applied Physics Letters. 2011;99(22). doi:10.1063/1.3665070

Buchholz SS, Kunze U, Reuter D, Wieck AD, Fischer SF. Mode-filtered electron injection into a waveguide interferometer. Applied Physics Letters. 2011;98(10). doi:10.1063/1.3563714

Chen YS, Huang J, Reuter D, Ludwig A, Wieck AD, Bacher G. Optically detected nuclear magnetic resonance in n-GaAs using an on-chip microcoil. Applied Physics Letters. 2011;98(8). doi:10.1063/1.3553503

Soldat H, Li M, Gerhardt NC, et al. Room temperature spin relaxation length in spin light-emitting diodes. Applied Physics Letters. 2011;99(5). doi:10.1063/1.3622662

Lorenz A, Kitzerow H-S. Efficient electro-optic switching in a photonic liquid crystal fiber. Applied Physics Letters. 2011;98(24). doi:10.1063/1.3599848

Lei W, Notthoff C, Lorke A, Reuter D, Wieck AD. Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy. Applied Physics Letters. 2010;96(3). doi:10.1063/1.3293445

Lei W, Notthoff C, Lorke A, Reuter D, Wieck AD. Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy. Applied Physics Letters. 2010;96(3). doi:10.1063/1.3293445

Csontos M, Komijani Y, Shorubalko I, Ensslin K, Reuter D, Wieck AD. Nanostructures in p-GaAs with improved tunability. Applied Physics Letters. 2010;97(2). doi:10.1063/1.3463465

Wiemann M, Wieser U, Kunze U, Reuter D, Wieck AD. Full-wave rectification based upon hot-electron thermopower. Applied Physics Letters. 2010;97(6). doi:10.1063/1.3475922

Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. Applied Physics Letters. 2010;97(14). doi:10.1063/1.3488812

Mehta M, Reuter D, Wieck AD, Michaelis de Vasconcellos S, Zrenner A, Meier C. An intentionally positioned (In,Ga)As quantum dot in a micron sized light emitting diode. Applied Physics Letters. 2010;97(14). doi:10.1063/1.3488812

Tschumak E, Granzner R, Lindner J, et al. Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001). Applied Physics Letters. 2010;96(25). doi:10.1063/1.3455066

Feste SF, Schäpers T, Buca D, et al. Measurement of effective electron mass in biaxial tensile strained silicon on insulator. Applied Physics Letters. 2009;95(18). doi:10.1063/1.3254330