@articleHenksmeier_Schulz_Kluth_Feneberg_Goldhahn_Sanchez_Voigt_Grundmeier_Reuter_2022, title=Remote epitaxy of InxG-xAs (0 0 1) on graphene covered GaAs(0 0 1) substrates, volume=593, DOI=10.1016/j.jcrysgro.2022.126756, number=126756, journal=Journal of Crystal Growth, publisher=Elsevier BV, author=Henksmeier, T. and Schulz, J.F. and Kluth, E. and Feneberg, M. and Goldhahn, R. and Sanchez, A.M. and Voigt, M. and Grundmeier, Guido and Reuter, Dirk, year=2022 

@articleVerma_Bopp_Finley_Jonas_Zrenner_Reuter_2022, title=Low Areal Densities of InAs Quantum Dots on GaAs(100) Prepared by Molecular Beam Epitaxy, DOI=10.1016/j.jcrysgro.2022.126715, number=126715, journal=Journal of Crystal Growth, publisher=Elsevier BV, author=Verma, A.K. and Bopp, F. and Finley, J.J. and Jonas, B. and Zrenner, A. and Reuter, Dirk, year=2022 

@articleAlbert_Golla_Meier_2021, title=Optical in-situ temperature management for high-quality ZnO molecular beam epitaxy, volume=557, DOI=10.1016/j.jcrysgro.2020.126009, number=126009, journal=Journal of Crystal Growth, author=Albert, M. and Golla, C. and Meier, Cedrik, year=2021 

@articleKunnathully_Riedl_Trapp_Langer_Reuter_Lindner_2020, title=InAs heteroepitaxy on nanopillar-patterned GaAs (111)A, DOI=10.1016/j.jcrysgro.2020.125597, number=125597, journal=Journal of Crystal Growth, author=Kunnathully, Vinay S. and Riedl, Thomas and Trapp, Alexander and Langer, Timo and Reuter, Dirk and Lindner, Jörg K.N., year=2020 

@articleKunnathully_Riedl_Trapp_Langer_Reuter_Lindner_2020, title=InAs heteroepitaxy on nanopillar-patterned GaAs (111)A, volume=537, DOI=10.1016/j.jcrysgro.2020.125597, number=125597, journal=Journal of Crystal Growth, publisher=Elsevier BV, author=Kunnathully, Vinay S. and Riedl, Thomas and Trapp, Alexander and Langer, Timo and Reuter, Dirk and Lindner, Jörg, year=2020 

@articleHenksmeier_Shvarkov_Trapp_Reuter_2019, title=Molecular beam epitaxy growth and temperature-dependent electrical characterization of carbon-doped GaAs on GaAs(1f1f1)B, volume=512, DOI=10.1016/j.jcrysgro.2019.02.006, journal=Journal of Crystal Growth, publisher=Elsevier BV, author=Henksmeier, Tobias and Shvarkov, Stepan and Trapp, Alexander and Reuter, Dirk, year=2019, pages=164–168 

@articleWecker_Jostmeier_Rieger_Neumann_Pawlis_Betz_Reuter_As_2017, title=Linear and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi quantum well structures, volume=477, DOI=10.1016/j.jcrysgro.2017.01.022, journal=Journal of Crystal Growth, publisher=Elsevier BV, author=Wecker, T. and Jostmeier, T. and Rieger, T. and Neumann, E. and Pawlis, A. and Betz, M. and Reuter, Dirk and As, Donat Josef, year=2017, pages=149–153 

@articleRitzmann_Schott_Gross_Reuter_Ludwig_Wieck_2017, title=Overcoming Ehrlich-Schwöbel barrier in (1f1f1)A GaAs molecular beam epitaxy, volume=481, DOI=10.1016/j.jcrysgro.2017.10.029, journal=Journal of Crystal Growth, publisher=Elsevier BV, author=Ritzmann, Julian and Schott, Rüdiger and Gross, Katherine and Reuter, Dirk and Ludwig, Arne and Wieck, Andreas D., year=2017, pages=7–10 

@articleScholz_Schott_Labud_Somsen_Reuter_Ludwig_Wieck_2017, title=Focused ion beam supported growth of monocrystalline wurtzite InAs nanowires grown by molecular beam epitaxy, volume=470, DOI=10.1016/j.jcrysgro.2017.04.013, journal=Journal of Crystal Growth, publisher=Elsevier BV, author=Scholz, Sven and Schott, Rüdiger and Labud, Patrick A. and Somsen, Christoph and Reuter, Dirk and Ludwig, Arne and Wieck, Andreas D., year=2017, pages=46–50 

@articleSharma_Reuter_2016, title=A modified gradient approach for the growth of low-density InAs quantum dot molecules by molecular beam epitaxy, volume=477, DOI=10.1016/j.jcrysgro.2016.11.117, journal=Journal of Crystal Growth, publisher=Elsevier BV, author=Sharma, Nandlal and Reuter, Dirk, year=2016, pages=225–229